Infineon Technologies S26KS128SDPBHM023

Overview

S26KS128SDPBHM023 from Infineon Technologies is a 128 Mb (16 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and read data strobe (RWDS). It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. It is used in high-performance boot code storage for automotive ADAS controllers.

For engineers reviewing the S26KS128SDPBHM023 datasheet, S26KS128SDPBHM023 pinout, S26KS128SDPBHM023 application, or S26KS128SDPBHM023 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access, 118 ns CS# to first word), RWDS-synchronized DDR read alignment, configurable burst length (16/32/64 bytes), low-power deep power-down mode (4 µA), and AEC-Q100 grade 3 qualification for automotive use.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS timing alignment, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. All command/address/data transfers occur over the same 8-bit DQ bus using DDR protocol - two 8-bit transfers per clock cycle (16-bit effective width).

It uses MIRRORBIT™ floating-gate technology enabling true NOR random access with page-aligned 32-byte reads and hybrid burst modes (wrapped + linear). The RWDS output is edge-aligned to CK/CK# transitions during reads, and DCARS (DDR Center-Aligned Read Strobe) ensures precise data capture timing at 166 MHz, requiring no external delay calibration.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with CY14B108M20BAIT2Z, S26KS128SDPBHM023 offers 1.6× higher read bandwidth and deterministic DDR timing but lacks instant-write nvSRAM behavior; versus S26KL128SDPBHM023, it trades 66% higher throughput and tighter timing for stricter 1.8 V I/O compliance and differential clock layout requirements.

Availability

S26KS128SDPBHM023 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLCs, medical imaging subsystems, and avionics display units requiring stable component supply, AEC-Q100 qualification, and high-throughput boot memory.

Supply support for S26KS128SDPBHM023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS16949.

The HYPERFLASH™ product line targets high-reliability embedded systems requiring fast, deterministic boot and firmware execution - specifically engineered for automotive, industrial, and medical applications demanding AEC-Q100 qualification and 20-year data retention.

FAQ

What is the purpose of the RWDS signal in S26KS128SDPBHM023?

RWDS (Read Data Strobe) is a source-synchronous output that indicates valid read data timing. It is edge-aligned to CK/CK# transitions during read operations and must be used by the host controller to latch DQ[7:0] data reliably at 166 MHz. Unlike clock signals, RWDS is only active during read data transfer periods and is not used for write operations or command decoding.

Does S26KS128SDPBHM023 support both linear and wrapped burst modes?

Yes - the device supports both linear and wrapped burst types, selectable per transaction via command encoding. Wrapped bursts support fixed lengths of 16, 32, or 64 bytes (8, 16, or 32 clocks), while linear bursts continue until CS# goes HIGH. Hybrid mode (one wrapped burst followed by linear) is also configurable, enabling optimized cache-line and sequential-access patterns.

How does the ECC functionality operate during read operations?

ECC operates transparently during every read: 1-bit errors are automatically corrected in hardware before data reaches the DQ bus; 2-bit errors are detected and reported via INT# assertion and status register flags. No host intervention is required for correction, and corrected data appears identical to uncorrupted data on the bus - preserving boot ROM compatibility and deterministic timing.

What is the wake-up time from Deep Power-Down mode?

Wake-up from Deep Power-Down requires 300 µs after CS# is driven LOW and VCC/VCCQ are stabilized. During this period, the device performs internal voltage monitoring and state restoration; no commands may be issued until the READY status bit is set. This delay is fixed and independent of temperature or density, verified across the full industrial temperature range.