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Infineon Technologies S26KS128SDPBHV020

Part No.:
S26KS128SDPBHV020
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
24-VBGA
Datasheet:
AetrixS26KS128SDPBHV020.pdf
Description:
IC FLASH 128MBIT HYPERBUS 24FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:273

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Product details

Overview

S26KS128SDPBHV020 from Infineon is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial-plus temperature range (–40°C to +105°C) in 24-ball FBGA package for embedded boot code storage.

For engineers reviewing the S26KS128SDPBHV020 datasheet, S26KS128SDPBHV020 pinout, S26KS128SDPBHV020 application, or S26KS128SDPBHV020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), RWDS-synchronized DDR read alignment, sector protection granularity, deep power-down current (4 µA), and AEC-Q100 grade 2 qualification for automotive control modules.

Technical Context

This device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with dual-edge sampling referenced to CK/CK#. The embedded algorithm controller (EAC) autonomously executes program/erase sequences without host intervention after command issuance.

It uses MIRRORBIT™ architecture enabling 16-bit word-wide accesses on 16-byte-aligned boundaries, with initial latency of 5–16 clock cycles and configurable burst modes (16/32/64-byte wrapped or linear). RWDS output is edge-aligned to data transitions during reads, while DCARS (DDR Center-Aligned Read Strobe) ensures precise capture timing at the host receiver.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density128 Mb (16 MB) - sufficient for full boot image + firmware partition in resource-constrained microcontrollers
Interface StandardHYPERTBUS™ DDR - 8-bit bidirectional DQ bus with CK/CK# differential clock and RWDS strobe for high-speed deterministic timing
Max Read Throughput333 MBps - achieved via dual-edge 8-bit transfers at 166 MHz, enabling real-time code execution from flash
Random Access Time96 ns - defines minimum latency for first-word fetch in interrupt-driven or exception-handling contexts
Operating Voltage1.8 V I/O, 3.0 V core - enables low-power operation while maintaining noise margin for high-speed signaling
Endurance & Retention100,000 program/erase cycles / 20-year data retention - validated for long-life industrial control and automotive ECU applications
Temperature Range–40°C to +105°C (Industrial Plus) - qualified per AEC-Q100 Grade 2 for under-hood automotive use

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
CK / CK#Differential clock inputReference for DDR sampling of DQ and RWDS; enables jitter-tolerant high-speed timing
CS#Chip select (active-low)Enables device communication; must be asserted before command/address transfer begins
RWDSRead data strobe outputEdge-aligned with read data on DQ; used by host to latch valid data during DDR read bursts
DQ[7:0]Bidirectional data/command busCarries commands, addresses, and 8-bit data in DDR mode; requires impedance-controlled routing
INT#Interrupt outputAsserted on ECC error detection or busy-to-ready transition; enables asynchronous host notification
RSTO#Reset outputConfigurable LOW pulse duration for system-level power-on reset coordination
VCC / VCCQCore and I/O supplySeparate 3.0 V core / 1.8 V I/O rails allow independent power domain management

Key Features

FeatureDesign Value
HYPERBUS™ DDR InterfaceReduces signal count vs. parallel NOR while sustaining >300 MBps read - ideal for space-constrained PCBs with high code density
Configurable Burst ModesSupports 16/32/64-byte wrapped bursts or linear bursts - optimizes cache line fill efficiency for ARM Cortex-A/R cores
ECC & CRC Protection1-bit correction / 2-bit detection + CRC on command transfers - meets ASIL-B requirements for safety-critical boot memory
Low-Power ModesDeep power-down draws only 4 µA at 85°C - extends battery life in always-on telematics and gateway modules
Advanced Sector ProtectionVolatile and non-volatile lock bits per 256-KB sector - prevents accidental overwrite of bootloader or calibration data in field-upgrade scenarios

Applications

Automotive ADAS Domain ControllerIndustrial PLC Firmware Storage

Use Scenario: Boot code and safety monitor firmware storage in radar/Ethernet switch SoC-based ADAS ECUs.

IC Role / Device Role / Timing Role: Primary non-volatile boot memory interfaced directly to SoC HYPERBUS™ master; provides sub-100 ns first-word access for deterministic boot timing.

Use Value: AEC-Q100 Grade 2 qualification and ECC ensure functional safety compliance (ISO 26262 ASIL-B) without external error correction logic.

Use Scenario: Storing firmware, configuration tables, and recipe data in modular industrial controllers with frequent field updates.

IC Role / Device Role / Timing Role: High-reliability code storage with sector-level write protection; RWDS-synchronized reads enable deterministic scan cycle timing.

Use Value: 100,000 erase cycles and 20-year retention guarantee operational integrity over 15+ years of unattended factory deployment.

5G Small Cell Baseband ProcessorMedical Imaging System Boot Memory

Use Scenario: Loading FPGA configuration bitstreams and baseband DSP firmware in compact 5G NR small cell units.

IC Role / Device Role / Timing Role: High-throughput flash memory co-located with baseband SoC; 333 MBps read rate eliminates instruction cache bottlenecks.

Use Value: Linear burst mode enables continuous instruction streaming to multi-core DSPs, reducing boot time by >40% vs. legacy parallel NOR.

Use Scenario: Secure boot image storage in FDA-cleared diagnostic imaging equipment requiring traceable firmware integrity.

IC Role / Device Role / Timing Role: Certified non-volatile memory with CRC-protected command interface and hardware reset coordination via RSTO#.

Use Value: ISO/TS 16949 manufacturing certification and 1024-byte one-time-programmable array support secure key provisioning and audit logging.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial NOR flash applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress S26KL128SDPBHV020Same die, identical electrical specs and pinout; rebranded pre-acquisition part - functionally identicalNo difference; fully drop-in compatible with same footprint and timingSelect when sourcing legacy Cypress-designated inventory or cross-reference systems
Winbond W25Q128JVSIMQuad SPI interface (not DDR), max 133 MHz clock, 40 MBps read; no RWDS or differential clockLimited to lower-bandwidth MCU boot; lacks ECC, AEC-Q100, or industrial-plus temp ratingOnly suitable for cost-sensitive non-automotive designs where HYPERBUS™ speed and reliability are not required

Compared with S26KL128SDPBHV020 (identical), the Winbond alternative trades 333 MBps throughput and automotive qualification for broader SPI ecosystem compatibility and lower unit cost - making it viable only in non-safety-critical, low-latency-tolerance applications.

Availability

S26KS128SDPBHV020 is available at Aetrix Electronics and suitable for automotive ADAS controllers, industrial PLCs, 5G small cell basebands, and medical imaging systems requiring stable component supply across extended product lifecycles.

Supply support for S26KS128SDPBHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to the HYPERFLASH™ family - designed specifically for high-speed, low-pin-count boot memory in automotive and industrial systems demanding deterministic timing, ECC protection, and extended temperature operation.

FAQ

What is the purpose of the RWDS signal in S26KS128SDPBHV020?

RWDS (Read Data Strobe) is an output signal synchronized to read data edges on the DQ bus. It enables the host controller to accurately latch DDR-read data without relying solely on CK/CK# timing margins. RWDS transitions align with valid data windows during burst reads, reducing setup/hold timing constraints and improving signal integrity in high-speed layouts.

Does S26KS128SDPBHV020 support both 1.8 V and 3.0 V I/O operation?

No - S26KS128SDPBHV020 is specified for 1.8 V I/O operation only, with differential CK/CK# and RWDS. The "3.0 V / 1.8 V" designation in the family datasheet refers to the broader HYPERFLASH™ portfolio; this specific part number (PBHV020 suffix) denotes 1.8 V I/O, industrial-plus temperature, and FBGA packaging.

How does the embedded algorithm controller (EAC) affect firmware update design?

After issuing a program or erase command sequence to the command address space, the EAC autonomously executes the full algorithm - including voltage ramping, verify steps, and status reporting - without host CPU intervention. This allows the host to enter low-power states or service other tasks during flash operations, simplifying real-time update scheduling in safety-critical systems.

Can S26KS128SDPBHV020 be used with standard SPI or QSPI controllers?

No - it requires a native HYPERBUS™ master interface capable of DDR signaling, differential clock handling, and RWDS synchronization. Standard SPI/QSPI controllers lack the timing control, signal count, and protocol stack needed to drive HYPERBUS™ commands, addresses, and data. Dedicated SoC peripherals (e.g., NXP i.MX RT117x, Renesas RZ/G2L) or FPGA IP blocks are required.

S26KS128SDPBHV020 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HYPERFLASH™ KS
Package/Case:
24-VBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NOR
Memory Size:
128Mbit
Memory Organization:
16M x 8
Memory Interface:
HyperBus
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
-
Access Time:
96 ns
Voltage - Supply:
1.7V ~ 1.95V
Operating Temperature:
-40°C ~ 105°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-FBGA (6x8)

S26KS128SDPBHV020 FAQ

1.How can I place an order for S26KS128SDPBHV020 through Aetrix?

Please submit a Request for Quotation (RFQ) for S26KS128SDPBHV020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S26KS128SDPBHV020 reliable?

The price and inventory of S26KS128SDPBHV020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KS128SDPBHV020 is usually 5 days.

3.What payment methods are accepted for S26KS128SDPBHV020?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KS128SDPBHV020 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S26KS128SDPBHV020?

S26KS128SDPBHV020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S26KS128SDPBHV020 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S26KS128SDPBHV020?

For technical support, including S26KS128SDPBHV020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KS128SDPBHV020 requirements.

6.How does Aetrix verify that S26KS128SDPBHV020 is sourced from the original manufacturer or authorized distributors?

All S26KS128SDPBHV020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KS128SDPBHV020 meets industry standards.

7.What is the process for return or replacement of S26KS128SDPBHV020?

All S26KS128SDPBHV020 units undergo pre-shipment inspection (PSI). If there is an issue with S26KS128SDPBHV020, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S26KS128SDPBHV020 part is unused and in its original packaging.

Return procedure for S26KS128SDPBHV020:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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