Nexperia USA Inc. S26KS256SDABHA030

Overview

S26KS256SDABHA030 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), RWDS read strobe, and 166 MHz clock rate delivering 333 MBps sustained read throughput. It supports wrapped/linear burst modes, 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and operates from –40°C to +105°C (Industrial Plus grade).

For engineers reviewing the S26KS256SDABHA030 datasheet, S26KS256SDABHA030 pinout, S26KS256SDABHA030 application, or S26KS256SDABHA030 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-synchronized DDR read alignment, sector protection configuration, deep power-down current (4 µA), and AEC-Q100 Grade 2 qualification for automotive control modules.

Technical Context

This device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time signal capture and DDR data transfer over DQ/RWDS/CK/CK#, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ technology for high-density NOR storage and supports center-aligned command/address and edge-aligned read-data relative to RWDS transitions.

The HYPERBUS™ protocol enables 16-bit word transfers per clock cycle via 8-bit DDR bus - two 8-bit transfers per clock edge - achieving 333 MBps at 166 MHz. Initial random access latency is 5–16 clock cycles (96 ns), with configurable burst lengths (16/32/64 bytes) and hybrid burst mode (wrapped + linear).

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with CY15B104QN-PSOC and S26KL256SDABHA020, S26KS256SDABHA030 uniquely delivers 333 MBps DDR read performance with differential clock tolerance and automotive-grade thermal robustness - essential for next-generation ADAS and industrial edge compute platforms.

Availability

S26KS256SDABHA030 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, medical imaging boot systems, and 5G radio firmware storage requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S26KS256SDABHA030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERFLASH™ family - designed specifically for high-bandwidth, low-pin-count firmware storage in automotive, industrial, and communications systems requiring deterministic boot and field-upgrade capability.

FAQ

What is the minimum supported clock frequency for S26KS256SDABHA030?

The device supports variable clock rates down to DC (0 Hz) in active mode, with functional operation guaranteed from 0 MHz to 166 MHz. At lower frequencies, timing margins increase, enabling relaxed PCB layout and compatibility with slower HYPERBUS™ masters. No minimum clock is specified - the device remains fully operational even with stopped clock during read operations (Active Clock Stop mode draws 12 mA).

Does S26KS256SDABHA030 require external termination resistors for CK/CK# or DQ lines?

Yes - per Infineon's layout guidelines (AN224512), 49.9 Ω series resistors are required on CK and CK# near the device, and 33 Ω series resistors on each DQ line. RWDS requires a 49.9 Ω pull-up to VCCQ. These terminations ensure signal integrity for 166 MHz DDR operation and suppress reflections in point-to-point HYPERBUS™ links.

How is the 512-byte program buffer utilized during write operations?

The internal 512-byte buffer allows burst programming of up to 512 bytes in a single command sequence, reducing host overhead and improving effective write throughput to ~1 MBps. The buffer is written sequentially via DQ bus; once full, a single "Program Buffer" command initiates internal page programming. Buffer usage is mandatory for optimal performance - single-word programming achieves only ~4 KBps.

Can RSTO# be disabled or repurposed as a general-purpose output?

No - RSTO# is a dedicated open-drain output with fixed function: generating a system-level power-on reset pulse upon device initialization. Its duration (1–100 ms) is user-configurable via non-volatile register, but the pin cannot be disabled or reassigned. It drives external reset logic only and lacks input capability or alternate function mapping.