Spansion S26KS256SDABHI030

Overview

S26KS256SDABHI030 from Infineon is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across –40°C to +105°C (Industrial Plus grade) in automotive-qualified AEC-Q100 Grade 2.

For engineers reviewing the S26KS256SDABHI030 datasheet, S26KS256SDABHI030 pinout, S26KS256SDABHI030 application, or S26KS256SDABHI030 equivalent, key selection criteria include DDR burst timing compliance, RWDS-synchronized read latency (96 ns tACC), ECC 1-bit correction/2-bit detection, low-power deep power-down (4 µA), and FBGA-24 package compatibility with HYPERBUS™ master controllers in ADAS and real-time firmware storage.

Technical Context

This device implements a dual-controller architecture: Host Interface Controller (HIC) manages DDR signal capture using CK/CK# and RWDS for edge-aligned read data, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. All command/address/data transfers occur over the same 8-bit DQ bus in DDR fashion.

It supports configurable burst modes-wrapped (16/32/64 bytes) or linear-with initial latency of 5–16 clock cycles and 96 ns random access time. The MIRRORBIT™ memory array enables page-aligned 32-byte reads, with automatic next-page prefetch during linear bursts to sustain 333 MBps throughput.

Key Specifications

Pinout & Package

Package: 24-ball Fortified Ball Grid Array (FBGA), 5 mm × 5 mm × 1.0 mm (VAA024), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with CY15B104QN-PSOC, S26KS256SDABHI030 delivers 83× higher read bandwidth and firmware XIP capability; versus S26KL256SDABHI020, it enables 66% faster throughput and tighter timing margins essential for next-gen ADAS platforms.

Availability

S26KS256SDABHI030 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, medical imaging systems, and avionics display processors requiring stable component supply, AEC-Q100 qualification, and long-term lifecycle support.

Supply support for S26KS256SDABHI030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certification to ISO/TS16949.

This device belongs to the HYPERFLASH™ family - designed specifically for high-speed, low-pin-count firmware storage in safety-critical automotive and industrial systems requiring DDR throughput, ECC, and AEC-Q100 compliance.

FAQ

What is the function of the RWDS signal in S26KS256SDABHI030?

RWDS (Read Data Strobe) is an output signal that indicates valid read data timing on the DQ[7:0] bus. It is edge-aligned with read data transitions and referenced to CK/CK# rising/falling edges. RWDS is used exclusively during read operations to synchronize host latching of DDR data - it is not used for write operations or command transfers.

Does S26KS256SDABHI030 support XIP (eXecute-In-Place) operation?

Yes - its 96 ns random access time, 333 MBps sustained read throughput, and HYPERBUS™ DDR interface enable direct execution of firmware from flash without copying to RAM. This is validated in Infineon reference designs with Xilinx Zynq UltraScale+ MPSoC and NXP S32K3xx MCUs, supporting deterministic real-time boot and interrupt handling.

How does the 512-byte program buffer improve write performance?

The 512-byte buffer allows up to 32 consecutive 16-bit word writes to be queued and executed in a single embedded algorithm cycle. This reduces average programming time from 500 µs per word (~4 KBps) to 475 µs per 512-byte block (~1 MBps), accelerating firmware updates and reducing host CPU overhead during field upgrades.

What is the purpose of the RSTO# output pin?

RSTO# is an open-drain reset output configurable via internal registers to assert a LOW pulse for 1–100 ms after power stabilization. It provides a system-level power-on reset signal to companion processors or FPGAs, ensuring synchronized initialization without external reset ICs - critical for ASIL-B and DO-254 compliant designs.