Nexperia USA Inc. S26KS256SDGBHA030

Overview

S26KS256SDGBHA030 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across –40°C to +105°C (Industrial Plus grade) in automotive-grade AEC-Q100 Grade 2 qualification.

For engineers reviewing the S26KS256SDGBHA030 datasheet, S26KS256SDGBHA030 pinout, S26KS256SDGBHA030 application, or S26KS256SDGBHA030 equivalent, key selection criteria include DDR HYPERBUS™ timing compliance, 1.8 V differential clock interface, ECC 1-bit correction/2-bit detection, 512-byte write buffer, and AEC-Q100 Grade 2 temperature support for ADAS and infotainment boot storage.

Technical Context

This device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and data transfer synchronization with CK/CK#, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. RWDS is edge-aligned to CK transitions during reads, enabling precise DDR data capture.

It uses MIRRORBIT™ NOR flash technology with 16-bit word-wide addressing and page-aligned 32-byte random access. Burst modes-wrapped (16/32/64 bytes) or linear-are configurable per transaction, and initial read latency ranges from 5–16 clock cycles with 96 ns tACC at 166 MHz.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KS256SDGBHA030, the Cypress alternative offers identical pinout and timing but omits automotive qualification, while the Winbond part trades bandwidth and interface complexity for broader ecosystem support-making the Infineon device optimal for new AEC-Q100-compliant HYPERBUS™ designs demanding >300 MBps read performance.

Availability

S26KS256SDGBHA030 is available at Aetrix Electronics and suitable for ADAS domain controllers, automotive infotainment systems, telematics control units, and battery management systems requiring stable component supply with automotive-grade reliability and long-term lifecycle support.

Supply support for S26KS256SDGBHA030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to the HYPERFLASH™ family-designed specifically for high-bandwidth, low-pin-count boot and code storage in automotive and industrial real-time systems using the standardized HYPERBUS™ interface.

FAQ

What is the purpose of the RWDS signal in S26KS256SDGBHA030?

RWDS (Read Data Strobe) is an output-only signal that toggles synchronously with valid read data on DQ[7:0]. It is edge-aligned to CK/CK# transitions during read operations and serves as a timing reference for the host to sample data accurately-eliminating setup/hold timing constraints common in parallel NOR interfaces. RWDS is not used during write operations.

Does S26KS256SDGBHA030 support execute-in-place (XIP) operation?

Yes, S26KS256SDGBHA030 supports XIP via its synchronous DDR interface and deterministic read latency. The HYPERBUS™ protocol enables continuous linear burst reads with predictable timing, allowing SoCs to fetch and execute instructions directly from flash without copying to RAM-reducing system memory footprint and boot latency in automotive applications.

How does the 512-byte write buffer improve programming efficiency?

The 512-byte write buffer allows the device to accept one full buffer load (4096 bits) in a single command sequence, then internally program all 512 bytes in ~475 µs. This achieves ~1 MBps effective programming speed-over 200× faster than single-word programming-and minimizes host CPU intervention during firmware updates or configuration writes.

What is the function of RSTO# and how is it configured?

RSTO# is an open-drain output that generates a system-level power-on reset pulse. Its LOW duration is user-configurable via internal registers (default 100 ms). It asserts after power stabilization and deasserts once internal logic is ready, providing a synchronized reset signal to companion MCUs or PMICs-ensuring deterministic system initialization without external reset supervisors.