Spansion S26KS256SDGBHB030

Overview

S26KS256SDGBHB030 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sectors and optional 4-KB parameter sectors, and operates across –40°C to +105°C (Industrial Plus grade).

For engineers reviewing the S26KS256SDGBHB030 datasheet, S26KS256SDGBHB030 pinout, S26KS256SDGBHB030 application, or S26KS256SDGBHB030 equivalent, key selection criteria include DDR burst configuration (wrapped/linear/hybrid), RWDS-synchronized read timing, ECC 1-bit correction/2-bit detection, low-power deep power-down (4 µA), and AEC-Q100 Grade 2 qualification for automotive control modules.

Technical Context

The device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with dual-edge sampling referenced to CK/CK#. Read operations use RWDS as an edge-aligned output strobe synchronized to data transitions, while initial access latency ranges from 5–16 clock cycles depending on configuration.

Internally, it separates host interface control (HIC) and embedded algorithm control (EAC): HIC handles real-time signal capture and data transfer, while EAC executes program/erase algorithms-including sector erase, buffer programming, and protection-without host intervention. ECC and CRC support ensure data integrity during boot and firmware updates.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KS256SDGBHB030, the S26KS256SDABHB020 trades speed and noise immunity for 3.0 V compatibility, while S26KL256SDGBHB030 maintains identical I/O performance but shifts core voltage to 3.0 V-requiring revised power rail design but preserving all timing and feature parity.

Availability

S26KS256SDGBHB030 is available at Aetrix Electronics and suitable for automotive gateway modules, industrial PLC firmware storage, medical imaging boot memory, and avionics display controllers requiring stable component supply across extended temperature and long lifecycle programs.

Supply support for S26KS256SDGBHB030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This part belongs to the HYPERFLASH™ family-designed specifically for high-speed, low-pin-count code storage in automotive, industrial, and aerospace systems requiring deterministic boot performance and long-term data integrity.

FAQ

What is the difference between RWDS and CK/CK# in HYPERBUS™ timing?

RWDS is an output strobe synchronized to read data edges and used solely to indicate valid DQ values during reads; CK/CK# are differential inputs that serve as the master timing reference for all DDR sampling events. RWDS does not drive write operations and is inactive during programming or erase cycles.

Does S26KS256SDGBHB030 support linear burst reads across page boundaries?

Yes-it automatically prefetches the next sequential page during linear burst mode, enabling continuous 333 MBps throughput without host intervention. This behavior is enabled by internal MIRRORBIT™ array architecture and is independent of address wrap-around constraints.

How is ECC applied to data stored in this device?

ECC is applied per 512-byte sector with dedicated hardware logic: 1-bit errors are corrected transparently during read, and 2-bit errors trigger INT# assertion for host-level handling. ECC coverage includes main array, parameter sectors, and one-time-programmable (OTP) regions.

Can RSTO# be disabled or reconfigured after power-up?

Yes-RSTO# pulse duration is user-configurable via non-volatile register settings. The default LOW period is factory-set but can be modified using standard command sequences; configuration persists across power cycles and does not require external pull-up/down components.