Spansion S26KS256SDGBHI030

Overview

S26KS256SDGBHI030 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across –40°C to +105°C (Industrial Plus grade) in automotive-grade AEC-Q100 Grade 2 applications.

For engineers reviewing the S26KS256SDGBHI030 datasheet, S26KS256SDGBHI030 pinout, S26KS256SDGBHI030 application, or S26KS256SDGBHI030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), ECC 1-bit correction/2-bit detection, configurable burst modes (16/32/64-byte wrapped or linear), low-power deep power-down (4 µA), and RSTO#/INT# interrupt signaling for real-time system control.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages DDR signal capture and data transfer timing using CK/CK# and RWDS, while Embedded Algorithm Controller (EAC) executes internal program/erase algorithms without host intervention. All command/address/data transfers occur over the same 8-bit DQ bus in DDR fashion - two 8-bit transfers per clock cycle.

It uses MIRRORBIT™ NOR flash technology with page-aligned 32-byte random reads (two 16-byte half-pages), center-aligned command/address and edge-aligned read-data relative to RWDS transitions. Burst operations support hybrid mode (one wrapped burst followed by linear burst), and initial latency ranges from 5–16 clock cycles depending on configuration.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 6 mm × 8 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KS256SDABHI020, this part enables higher bandwidth and lower EMI via differential clocking; compared with S26KL256SDGBHI030, it reduces total system power by eliminating the need for a 3.0 V core supply while maintaining identical interface performance.

Availability

S26KS256SDGBHI030 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, medical imaging subsystems, and avionics display units requiring stable component supply, AEC-Q100 qualification, and long-term lifecycle support.

Supply support for S26KS256SDGBHI030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT markets.

This device belongs to the HYPERFLASH™ family - engineered specifically for high-bandwidth, low-pin-count code storage in safety-critical embedded systems demanding deterministic timing and long-term reliability.

FAQ

What is the minimum wake-up time from Deep Power-Down mode?

The S26KS256SDGBHI030 requires 300 µs to exit Deep Power-Down mode and resume normal operation. During this period, CS# must remain HIGH and no commands may be issued. The device automatically initializes internal circuitry and validates memory state before accepting new commands, ensuring reliable recovery without external reset assertion.

Does this device support linear burst reads across page boundaries?

Yes - in Linear Burst mode, the device automatically fetches the next sequential 32-byte page from the MIRRORBIT™ array while bursting out the current page. This pipelined operation sustains 333 MBps throughput without host intervention and eliminates boundary stalls, making it ideal for streaming firmware images or large lookup tables.

How is ECC handled during read operations?

ECC is applied transparently during every read: 1-bit errors are corrected in hardware and delivered error-free to the host; 2-bit errors trigger the INT# pin and set an internal status flag. No software overhead is required for correction, and uncorrectable errors are reported before data is latched, preventing corrupted values from entering the processor pipeline.

Can RSTO# pulse width be modified after power-up?

Yes - RSTO# LOW duration is user-configurable via the Device Configuration Register (DCR), accessible through standard HYPERBUS™ command sequences. Valid settings range from 1 ms to 128 ms in powers of two, allowing alignment with diverse SoC reset timing requirements without hardware changes.