Spansion S26KS256SDGBHN030

Overview

S26KS256SDGBHN030 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across industrial temperature range (–40°C to +85°C) in a 24-ball FBGA package. Used in automotive ADAS ECUs for fast boot code execution.

For engineers reviewing the S26KS256SDGBHN030 datasheet, S26KS256SDGBHN030 pinout, S26KS256SDGBHN030 application, or S26KS256SDGBHN030 equivalent, key selection criteria include HYPERBUS™ timing compliance, ECC 1-bit correction capability, RWDS-synchronized DDR read latency (96 ns tACC), and AEC-Q100 Grade 3 qualification for automotive embedded systems.

Technical Context

The device implements a synchronous DDR interface using differential CK/CK# for precise timing capture and RWDS as a read-data strobe referenced to CK edges. Its internal MIRRORBIT™ architecture enables 16-bit word-aligned addressing and page-based access with 32-byte pages composed of two 16-byte half-pages.

Control logic splits into Host Interface Controller (HIC) for signal monitoring and data transfer coordination, and Embedded Algorithm Controller (EAC) for autonomous execution of program/erase sequences. Burst modes-wrapped (16/32/64 bytes) or linear-are configurable per transaction, with hybrid burst support.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with CY15B104QN-SXIT and S26KL256SDHBHI020, S26KS256SDGBHN030 uniquely balances automotive-grade reliability, 333 MBps DDR read performance, and hardware ECC-making it the sole option for ASIL-B/C boot memory where both speed and safety certification are non-negotiable.

Availability

S26KS256SDGBHN030 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, medical imaging subsystems, and avionics display modules requiring stable component supply across extended product lifecycles.

Supply support for S26KS256SDGBHN030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This part belongs to the HYPERFLASH™ family-designed specifically for automotive and industrial systems needing high-speed, low-pin-count, safety-certified NOR flash with deterministic read latency and embedded ECC.

FAQ

What is the minimum supported clock frequency for S26KS256SDGBHN030?

The device supports variable clock rates down to DC (0 Hz) in active mode, with functional operation confirmed from 1 MHz to 166 MHz. At frequencies below 10 MHz, RWDS timing margins increase but remain within specification; no minimum clock is enforced by the embedded algorithm controller.

Does S26KS256SDGBHN030 require external voltage regulators for VCC and VCCQ?

Yes-it requires separate 1.8 V supplies for core (VCC) and I/O (VCCQ), each with dedicated decoupling capacitors. The datasheet specifies ±5% tolerance for both rails; deviation beyond this range risks timing violation or ECC failure during high-speed bursts.

How is the 512-byte program buffer utilized during write operations?

The buffer accepts up to 512 bytes of write data in a single command sequence, then executes internal page programming in ~475 µs. Host software must align addresses to 16-byte boundaries and avoid crossing 256-KB sector boundaries during buffered writes to prevent abort.

Can S26KS256SDGBHN030 operate in linear burst mode without pre-fetching adjacent pages?

No-linear burst mode automatically initiates pre-fetch of the next sequential 32-byte page during current page output. This concurrent fetch/output mechanism is hardwired in the EAC and cannot be disabled; it is essential to achieving sustained 333 MBps throughput.