Infineon Technologies S26KS256SDGBHV030
- Part No.:
- S26KS256SDGBHV030
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 24-VBGA
- Datasheet:
-
S26KS256SDGBHV030.pdf
- Description:
- IC FLASH 256MBIT HYPERBUS 24FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:227
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Product details
Overview
S26KS256SDGBHV030 from Infineon is a 256 Mb (32 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, RWDS read strobe, and CS# control. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.
For engineers reviewing the S26KS256SDGBHV030 datasheet, S26KS256SDGBHV030 pinout, S26KS256SDGBHV030 application, or S26KS256SDGBHV030 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-synchronized DDR read latency (96 ns initial access), sector protection granularity, ECC implementation, and deep power-down current (4 µA).
Technical Context
The device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with dual-edge sampling referenced to CK/CK#. Read operations use RWDS as a center-aligned output strobe synchronized to data edges, enabling precise capture of 16-bit words across two DQ transitions per clock cycle.
Internally, it separates host interface control (HIC) from embedded algorithm execution (EAC), isolating protocol handling from flash management. The EAC autonomously executes program/erase sequences-including 512-byte buffer writes and 256-KB sector erases-without host intervention after command issuance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 256 Mb (32 MB) - fixed capacity for boot code and firmware storage in resource-constrained embedded systems |
| Interface Standard | HYPERTBUS™ DDR - low-pin-count (12-signal) high-speed interface replacing parallel NOR and Quad SPI in bandwidth-critical applications |
| Max Read Throughput | 333 MBps - achieved via 166 MHz differential clock and dual-edge DQ transfers, enabling real-time code execution from flash |
| Initial Access Time | 96 ns - deterministic latency for first word retrieval, critical for interrupt response and boot initialization timing |
| ECC Support | 1-bit correction / 2-bit detection - hardware-implemented error resilience without software overhead or CPU intervention |
| Power Modes | Deep Power-Down: 4 µA - ultra-low standby current enabling long-term retention in battery-backed or energy-harvesting systems |
| Endurance & Retention | 100,000 cycles / 20 years - validated non-volatility for industrial firmware update cycles over product lifetime |
Pinout & Package
Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, RoHS-compliant, moisture sensitivity level 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential Clock Input | Reference for all DDR timing; enables jitter-immune sampling of DQ and RWDS signals |
| CS# | Chip Select | Active-low enable for device communication; must be asserted before command initiation |
| RWDS | Read Data Strobe Output | Source-synchronous output aligned to read data edges; used by host to latch valid DQ values |
| DQ[7:0] | Bi-directional Data Bus | Shared path for commands, addresses, and 8-bit-wide DDR data; requires impedance-controlled routing |
| INT# | Interrupt Output | Active-low signal indicating ECC error detection or busy-to-ready transition |
| RSTO# | Reset Output | User-configurable open-drain reset pulse for system-level power-on initialization |
Key Features
| Feature | Design Value |
|---|---|
| HYPERBUS™ DDR Interface | Reduces signal count to 12 pins while delivering 3× higher bandwidth than Quad SPI, simplifying PCB layout and routing |
| Configurable Burst Mode | Supports wrapped (16/32/64-byte) or linear bursts per transaction, optimizing cache line alignment and DMA efficiency |
| 512-Byte Program Buffer | Enables 1 MBps effective write speed via buffered programming, reducing host CPU wait time during firmware updates |
| Volatile & Non-Volatile Sector Protection | Allows runtime lock/unlock of 256-KB sectors and optional 4-KB parameter sectors, preventing accidental overwrite of critical firmware |
| DCARS Timing Compliance | Guarantees deterministic 96 ns tACC with DDR center-aligned read strobe, meeting real-time boot and ISR latency requirements |
Applications
| Automotive ADAS Boot Memory | Industrial PLC Firmware Storage |
|---|---|
Use Scenario: Storing boot loader and safety-critical firmware for radar processing units requiring AEC-Q100 Grade 2 qualification. IC Role / Device Role / Timing Role: Primary non-volatile code storage with deterministic 96 ns access and ECC-protected execution-in-place (XIP) capability. Use Value: Enables zero-latency XIP execution from flash, eliminating external RAM copy overhead while maintaining ASIL-B compliance via ECC and sector locking. | Use Scenario: Holding field-upgradable firmware and configuration data in programmable logic controllers operating continuously in factory environments. IC Role / Device Role / Timing Role: High-reliability firmware repository with 100,000 erase cycles and 20-year retention under thermal cycling. Use Value: Supports unattended remote firmware updates with CRC validation and sector-level write protection, minimizing downtime during maintenance windows. |
| Medical Imaging System Code Storage | 5G Baseband Radio Control Memory |
Use Scenario: Hosting real-time image reconstruction algorithms and calibration tables in portable ultrasound devices with strict power budgets. IC Role / Device Role / Timing Role: Low-power, high-throughput code memory using Deep Power-Down (4 µA) between imaging sessions. Use Value: Extends battery life by >40% versus standard NOR flash through selective power gating without sacrificing 333 MBps read performance during acquisition. | Use Scenario: Storing FPGA configuration bitstreams and RF calibration profiles in small-cell base stations requiring rapid reconfiguration. IC Role / Device Role / Timing Role: High-speed configuration memory interfaced directly to FPGA HPS interface with RWDS-synchronized DDR reads. Use Value: Reduces FPGA configuration time by 65% compared to Quad SPI, accelerating cell site recovery after power loss or software reset. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed NOR flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress S26KS256SDABHV020 | Same density and package, but 3.0 V I/O only (no differential clock), max 200 MBps read, no RWDS output | Limited to legacy HYPERBUS™ master designs without differential signaling support | Select when system lacks CK#/RWDS routing capability or operates exclusively at 3.0 V |
| Winbond W25Q256JWSIQ | Quad SPI interface, 133 MHz clock, 40 MBps read, no DDR, no ECC, 4 KB sectors only | Lower cost, lower performance alternative for non-real-time firmware storage | Select when bandwidth < 100 MBps suffices and ECC is handled in software or external controller |
Compared with S26KS256SDGBHV030, the Cypress alternative trades DDR bandwidth and ECC for simpler 3.0 V signaling, while the Winbond part replaces HYPERBUS™ complexity with proven Quad SPI compatibility at significantly lower throughput and no hardware error correction.
Availability
S26KS256SDGBHV030 is available at Aetrix Electronics and suitable for automotive ADAS modules, industrial PLCs, medical imaging subsystems, and 5G radio units requiring stable component supply, AEC-Q100 qualification, and guaranteed 20-year data retention.
Supply support for S26KS256SDGBHV030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with ISO/TS 16949 certification and global manufacturing footprint.
This device belongs to the HYPERFLASH™ family, designed specifically to replace parallel NOR flash in bandwidth-constrained embedded systems requiring deterministic low-latency code execution and robust data integrity.
FAQ
What is the minimum supported clock frequency for S26KS256SDGBHV030?
The device supports variable clock rates down to DC for command execution, but sustained DDR read operations require ≥1 MHz to maintain RWDS synchronization. Initial access timing remains valid across the full 1–166 MHz range at 1.8 V, with no minimum frequency lock requirement for functional operation.
Does S26KS256SDGBHV030 support execute-in-place (XIP) operation?
Yes - the device supports true XIP mode via HYPERBUS™ DDR interface, allowing processor instruction fetch directly from flash without copying to RAM. This is enabled by deterministic 96 ns tACC, RWDS-synchronized read timing, and burst-length configurability matching CPU cache line sizes.
How is ECC implemented and what happens on 2-bit errors?
ECC is implemented in hardware using BCH(12,8) encoding. Single-bit errors are corrected transparently during read; 2-bit errors trigger the INT# pin and set status bits in the device's error register, allowing host software to initiate recovery or log the event without data corruption.
Can S26KS256SDGBHV030 operate with only single-ended clock (CK) instead of differential (CK/CK#)?
No - differential CK/CK# is mandatory for 1.8 V operation per HYPERBUS™ specification. The device does not support single-ended clock mode at 1.8 V. For single-ended clock systems, the 3.0 V variant (e.g., S26KS256SDABHV020) must be selected, which uses single-ended CK and omits CK# and RWDS.
S26KS256SDGBHV030 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HYPERFLASH™ KS
- Package/Case:
- 24-VBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 256Mbit
- Memory Organization:
- 32M x 8
- Memory Interface:
- HyperBus
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 96 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-FBGA (6x8)
S26KS256SDGBHV030 FAQ
1.How can I place an order for S26KS256SDGBHV030 through Aetrix?
Please submit a Request for Quotation (RFQ) for S26KS256SDGBHV030 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S26KS256SDGBHV030 reliable?
The price and inventory of S26KS256SDGBHV030 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KS256SDGBHV030 is usually 5 days.
3.What payment methods are accepted for S26KS256SDGBHV030?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KS256SDGBHV030 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S26KS256SDGBHV030?
S26KS256SDGBHV030 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S26KS256SDGBHV030 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S26KS256SDGBHV030?
For technical support, including S26KS256SDGBHV030 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KS256SDGBHV030 requirements.
6.How does Aetrix verify that S26KS256SDGBHV030 is sourced from the original manufacturer or authorized distributors?
All S26KS256SDGBHV030 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KS256SDGBHV030 meets industry standards.
7.What is the process for return or replacement of S26KS256SDGBHV030?
All S26KS256SDGBHV030 units undergo pre-shipment inspection (PSI). If there is an issue with S26KS256SDGBHV030, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S26KS256SDGBHV030 part is unused and in its original packaging.
Return procedure for S26KS256SDGBHV030:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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