Infineon Technologies S26KS256SDPBHA020

Overview

S26KS256SDPBHA020 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, RWDS read strobe, and CS# control. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S26KS256SDPBHA020 datasheet, S26KS256SDPBHA020 pinout, S26KS256SDPBHA020 application, or S26KS256SDPBHA020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access, 118 ns CS# to first word), RWDS-synchronized DDR read alignment, sector protection granularity, deep power-down current (4 µA), and AEC-Q100 grade 3 qualification for automotive infotainment boot storage.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and data transfer timing, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ technology for high-density NOR cell structure and supports both wrapped (16/32/64-byte) and linear burst modes.

HYPERBUS™ protocol enables command/address/data multiplexing over the same 8-bit DQ bus using DDR edge-aligned transfers; RWDS output is edge-aligned to CK/CK# transitions during reads, enabling precise data capture. Initial latency ranges from 5–16 clock cycles depending on configuration, and DCARS (DDR Center-Aligned Read Strobe) ensures deterministic timing for high-speed sequential access.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash memory applications.

Compared with S26KS256SDPBHA020, the Cypress-branded variant offers identical performance and qualification, while the Macronix MX25L25645G trades bandwidth and timing determinism for broader MCU compatibility - making it viable only in cost-sensitive, lower-throughput applications without strict boot latency requirements.

Availability

S26KS256SDPBHA020 is available at Aetrix Electronics and suitable for automotive infotainment, industrial PLC firmware, medical imaging boot storage, and 5G radio reconfiguration requiring stable component supply, long-term lifecycle assurance, and AEC-Q100-compliant sourcing.

Supply support for S26KS256SDPBHA020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification under ISO/TS 16949.

This device belongs to the HYPERFLASH™ family - designed specifically for high-bandwidth, low-pin-count boot and code storage in automotive, industrial, and communications systems requiring deterministic DDR flash access and robust data integrity.

FAQ

What is the minimum supported VCCQ voltage for S26KS256SDPBHA020?

The device supports 1.8 V ±0.15 V for VCCQ (I/O supply) in high-speed mode; operation below 1.65 V is not guaranteed and may cause timing violations or RWDS synchronization failure. The 3.0 V variant (S26KS256SDP**BHA020**) uses separate VCC/VCCQ rails but this specific part number is 1.8 V I/O only, per ordering code suffix 'D' and datasheet Table 14.1.

Does S26KS256SDPBHA020 require external termination resistors on CK/CK# or DQ lines?

Yes - the datasheet specifies 50 Ω series termination on CK/CK# near the memory device and 50 Ω parallel termination to VCCQ on DQ lines for impedance matching. Failure to implement these results in signal integrity degradation above 100 MHz and unreliable 166 MHz operation.

Can RWDS be disabled or repurposed as a general-purpose I/O?

No - RWDS is a dedicated, unidirectional output strictly tied to read data strobe timing and cannot be disabled or reassigned. Its behavior is fixed per HYPERBUS™ specification: active during read data windows, inactive otherwise, and required for proper DDR data capture by the host controller.

How does the 512-byte program buffer improve firmware update performance?

The buffer enables burst programming of up to 512 bytes per command, achieving ~1 MBps effective write speed versus 4 KBps for single-word writes. This reduces total update time for a 2 MB firmware image from ~500 seconds to ~2 seconds, minimizing system downtime during field upgrades.