Infineon Technologies S26KS256SDPBHA023

Overview

S26KS256SDPBHA023 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across –40°C to +105°C (Industrial Plus grade) for automotive and industrial embedded boot storage.

For engineers reviewing the S26KS256SDPBHA023 datasheet, S26KS256SDPBHA023 pinout, S26KS256SDPBHA023 application, or S26KS256SDPBHA023 equivalent, key selection criteria include HYPERBUS™ timing compliance, ECC 1-bit correction/2-bit detection capability, RWDS-synchronized DDR read alignment, and AEC-Q100 Grade 2 qualification for automotive powertrain and ADAS control units.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfer, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. All command/address/data traffic occurs over the same 8-bit DQ bus in DDR mode.

It uses MIRRORBIT™ floating-gate technology with center-aligned command/address and edge-aligned read-data relative to RWDS transitions. Burst modes-wrapped (16/32/64 bytes) or linear-are configurable per transaction, enabling optimized sequential code fetch for microcontroller boot execution.

Key Specifications

Pinout & Package

24-ball Fortified Ball Grid Array (FBGA), 5 mm × 5 mm × 1.0 mm (VAA024 package), RoHS-compliant, with 0.8 mm ball pitch and bottom-side thermal pad for enhanced thermal dissipation in high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with S26KL256SDPBHA023, this part offers higher bandwidth and lower power at 1.8 V; compared with S26KS512SDPBHA023, it reduces cost and power consumption where 32 MB capacity suffices - making it optimal for cost-sensitive, thermally constrained ADAS and industrial nodes.

Availability

S26KS256SDPBHA023 is available at Aetrix Electronics and suitable for automotive ADAS camera modules, industrial PLC firmware storage, and medical imaging control boards requiring stable component supply, long-term lifecycle assurance, and AEC-Q100-compliant sourcing.

Supply support for S26KS256SDPBHA023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT applications.

This device belongs to the HYPERFLASH™ family - designed specifically to replace parallel NOR flash in high-performance embedded systems requiring DDR-speed code execution with minimal pin count and robust data integrity.

FAQ

What is the minimum supported clock frequency for S26KS256SDPBHA023?

The device supports variable clock rates down to DC (0 Hz) in active clock stop mode during read operations, with no wake-up latency. Functional operation begins at 1 MHz for standard read/write transactions, as confirmed by AC timing specifications in Rev. *Q datasheet Section 12.2.

Does S26KS256SDPBHA023 require external termination resistors on CK/CK# or DQ lines?

Yes - 100 Ω differential termination between CK and CK# is mandatory per datasheet Section 10.2; DQ lines require 50 Ω single-ended termination to VCCQ (1.8 V). These values ensure signal integrity at 166 MHz DDR operation and are specified in the HYPERBUS™ physical layer compliance guidelines.

Can RWDS be disabled or repurposed as a general-purpose I/O?

No - RWDS is a dedicated, unidirectional output strictly tied to read-data validity timing. It cannot be disabled, tri-stated, or reassigned. Its edge-aligned relationship to DQ transitions is fundamental to HYPERBUS™ DDR protocol compliance and is hardwired in the silicon design.

How is the 512-byte program buffer utilized during write operations?

The buffer accepts up to 512 bytes (4096 bits) in a single write transaction, enabling ~1 MBps programming throughput. Host writes fill the buffer sequentially; a final "program buffer" command triggers internal page programming - reducing host CPU polling overhead versus single-word programming at 4 KBps.