Spansion S26KS256SDPBHB020

Overview

S26KS256SDPBHB020 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), RWDS read strobe, and 166 MHz clock rate delivering 333 MBps sustained read throughput. It supports wrapped/linear burst modes, 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and operates from –40°C to +105°C (Industrial Plus grade).

For engineers reviewing the S26KS256SDPBHB020 datasheet, S26KS256SDPBHB020 pinout, S26KS256SDPBHB020 application, or S26KS256SDPBHB020 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-synchronized DDR read latency (96 ns tACC), sector protection configuration, deep power-down current (4 µA), and FBGA-24 package compatibility with high-density embedded boot memory layouts.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfer, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ technology for 16-bit word-wide addressing and page-aligned 32-byte random reads.

HYPERBUS™ protocol enables command/address/data multiplexing over the same 8-bit DQ bus in DDR fashion-two 8-bit transfers per clock cycle-with CK/CK# referenced edge-aligned sampling and RWDS edge-aligned read data output. Burst transactions support configurable wrap lengths (16/32/64 bytes) or linear mode with automatic next-page prefetch.

Key Specifications

Pinout & Package

Package: 24-ball Fortified Ball Grid Array (FBGA), 5 mm × 5 mm × 1.0 mm (VAA024), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with S26KS256SDPBHB020, the Cypress rebrand offers identical performance and drop-in replacement value, while the Winbond QSPI alternative trades 8.3× lower bandwidth and no built-in ECC for broader controller compatibility - making it suitable only for cost-sensitive, non-safety-critical legacy platforms.

Availability

S26KS256SDPBHB020 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, 5G radio unit configuration, and medical imaging FPGA boot applications requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S26KS256SDPBHB020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and communications markets.

This device belongs to the HYPERFLASH™ family - designed specifically to replace parallel NOR flash in high-performance embedded boot applications where pin count, power, and DDR bandwidth are critical constraints.

FAQ

What is the purpose of the RWDS signal in S26KS256SDPBHB020?

RWDS (Read Data Strobe) is an output signal synchronized to read data transitions on DQ[7:0]. It provides edge-aligned timing reference for the host to correctly sample DDR read data, especially critical at 166 MHz where setup/hold margins are tight. Unlike clock signals, RWDS is only active during read operations and reflects actual data validity windows.

Does S26KS256SDPBHB020 support both 1.8 V and 3.0 V I/O operation?

No - S26KS256SDPBHB020 is a 1.8 V I/O variant only, indicated by the 'S' suffix in the part number and confirmed by its differential CK/CK# interface and 166 MHz maximum clock rating. The 3.0 V variants (e.g., S26KS256SDPHB020) use single-ended clock and max out at 100 MHz.

How does the 512-byte program buffer improve write performance?

The 512-byte buffer allows up to 64 consecutive 16-bit writes to be queued and executed internally without host intervention. This reduces average programming time from 500 µs per word to 475 µs per 512-byte block - achieving ~1 MBps throughput versus 4 KBps for single-word writes, significantly accelerating firmware updates.

Is RSTO# output configurable for different reset pulse widths?

Yes - RSTO# pulse duration is programmable via internal configuration registers. Users can select LOW periods of 1, 2, 4, or 8 milliseconds to match downstream processor reset timing requirements, eliminating need for external RC reset circuits in most embedded designs.