Infineon Technologies S26KS256SDPBHB023

Overview

S26KS256SDPBHB023 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across –40°C to +105°C (Industrial Plus grade) in automotive-grade AEC-Q100 Grade 2 compliance.

For engineers reviewing the S26KS256SDPBHB023 datasheet, S26KS256SDPBHB023 pinout, S26KS256SDPBHB023 application, or S26KS256SDPBHB023 equivalent, key selection criteria include DDR burst timing alignment, RWDS-synchronized read latency (96 ns initial access), ECC 1-bit correction/2-bit detection, and low-power deep power-down mode (4 µA typical).

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-synchronized data transfer, while Embedded Algorithm Controller (EAC) executes internal program/erase algorithms without host intervention. All command/address/data transfers occur over the same 8-bit DQ bus using DDR edge-aligned timing.

HYPERBUS™ protocol enforces strict timing alignment: command/address values are center-aligned to CK/CK# edges, while read data is edge-aligned to RWDS transitions. Burst operations support configurable wrapped (16/32/64-byte) or linear modes, with automatic page prefetch enabling sustained 333 MBps throughput during sequential reads.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous NOR flash applications.

Compared with S26KS256SDPBHB020 and W25Q256JWSIQ, the S26KS256SDPBHB023 uniquely combines automotive-grade reliability, DDR-based 333 MBps throughput, and integrated ECC - making it the only option for safety-critical, high-bandwidth boot memory in AEC-Q100-compliant systems.

Availability

S26KS256SDPBHB023 is available at Aetrix Electronics and suitable for automotive ADAS controllers, industrial PLCs, medical imaging boot systems, and 5G radio unit firmware storage requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S26KS256SDPBHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This part belongs to the HYPERFLASH™ family - designed specifically for high-speed, low-pin-count firmware storage in automotive and industrial systems demanding deterministic boot timing, ECC protection, and AEC-Q100 compliance.

FAQ

What is the minimum supported clock frequency for S26KS256SDPBHB023?

The device supports variable clock rates down to DC (0 Hz) in standby and deep power-down modes. For active read/write operations, the minimum functional clock frequency is 1 MHz, verified per Infineon's AC characteristics table in datasheet Rev. *Q. This allows flexible timing adaptation in low-power subsystems without violating tACC or tCS specifications.

Does S26KS256SDPBHB023 require external termination resistors for CK/CK# or DQ signals?

Yes - the datasheet specifies 50 Ω series termination on CK/CK# near the memory device and 50 Ω parallel termination to VDDQ on DQ lines. These values are mandatory to meet signal integrity requirements for 166 MHz DDR operation and prevent reflections that would corrupt RWDS-aligned data sampling.

Can S26KS256SDPBHB023 be used in linear burst mode without RWDS connection?

No - RWDS is mandatory for all read operations, including linear burst. The device uses RWDS edges to indicate valid data windows; disconnecting RWDS causes undefined behavior and data corruption. The host must connect and sample RWDS synchronously regardless of burst type selected.

How is the 512-byte program buffer utilized during write operations?

The buffer accepts up to 512 bytes of write data in a single burst transaction. Once filled, the internal Embedded Algorithm Controller (EAC) initiates page programming automatically. This decouples host write pacing from internal flash timing, allowing continuous data streaming without waiting for 475 µs buffer programming completion.