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Infineon Technologies S26KS256SDPBHI020

Part No.:
S26KS256SDPBHI020
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
24-VBGA
Datasheet:
AetrixS26KS256SDPBHI020.pdf
Description:
IC FLASH 256MBIT HYPERBUS 24FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,977

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Product details

Overview

S26KS256SDPBHI020 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across –40°C to +105°C (Industrial Plus grade) in automotive-qualified AEC-Q100 Grade 2.

For engineers reviewing the S26KS256SDPBHI020 datasheet, S26KS256SDPBHI020 pinout, S26KS256SDPBHI020 application, or S26KS256SDPBHI020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), ECC 1-bit correction/2-bit detection, configurable burst length (16/32/64 bytes), deep power-down current (4 µA), and FBGA-24 package compatibility with high-density MCU boot memory layouts.

Technical Context

The device implements a DDR center-aligned read strobe (DCARS) architecture where command/address and data are transferred over the same 8-bit DQ bus using double-data-rate signaling referenced to CK/CK#. RWDS output is edge-aligned to CK transitions during reads, enabling precise data capture by the host controller.

Internally, it separates control into Host Interface Controller (HIC) for real-time signal management and Embedded Algorithm Controller (EAC) for autonomous execution of program/erase sequences. The MIRRORBIT™ memory array enables 16-bit word-wide addressing and page-based 32-byte random access with half-page alignment on 16-byte boundaries.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density256 Mb (32 MB) - supports full firmware images for mid-tier automotive MCUs and industrial SoCs.
Interface StandardHYPERRBUS™ DDR - 8-bit bidirectional DQ bus with differential CK/CK#, reducing pin count vs parallel NOR.
Max Read Throughput333 MBps - achieved via 166 MHz clock × 2 transfers/cycle × 1 byte = sustained linear burst performance.
Random Access Time96 ns - initial latency of 5–16 clock cycles enables fast code fetch from non-sequential addresses.
Erase Endurance100,000 cycles - validated for frequent OTA update partitions in automotive telematics modules.
Data Retention20 years - guaranteed at +105°C, critical for long-lifecycle engine control units.
Power ModesDeep Power-Down: 4 µA - allows system-level energy budgeting without wake-up latency penalty.
Error HandlingECC: 1-bit correction / 2-bit detection - hardware-level protection against single-event upsets in safety-critical systems.

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
CK / CK#Differential clock inputDefines DDR timing reference; CK rising/falling edges sample DQ and RWDS; CK# enables jitter rejection.
CS#Chip select (active low)Enables device communication; HIGH places device in standby or deep power-down mode.
RWDSRead data strobe outputOutput-only signal synchronized to read data edges; used by host to latch valid DQ values.
DQ[7:0]Bi-directional data busCarries commands, addresses, and data in DDR fashion; 8-bit width reduces PCB routing complexity.
INT#Interrupt outputAsserts on ECC error detection or busy-to-ready transition; enables asynchronous host response.
RSTO#Reset outputConfigurable LOW pulse for system-level power-on reset; driven after internal voltage stabilization.
PSC / PSC#Power supply controlOptional signals for external power sequencing coordination in multi-rail automotive domains.

Key Features

FeatureDesign Value
HYPERBUS™ DDR InterfaceReduces signal count to 12 pins (vs ≥30 for legacy parallel NOR), enabling compact PCB layout in space-constrained ECUs.
Configurable Burst LengthSupports 16/32/64-byte wrapped bursts or linear bursts - optimizes cache line fill efficiency for ARM Cortex-R5/R7 cores.
Advanced Sector ProtectionVolatile and non-volatile lock bits per 256-KB sector - prevents accidental overwrite of bootloader or calibration data in field-deployed units.
512-Byte Program BufferEnables 1 MBps write speed (vs 4 KBps for single-word programming) - accelerates firmware patch deployment in production test.
AEC-Q100 Grade 2 QualificationValidated for –40°C to +105°C operation with ISO/TS 16949 manufacturing controls - meets ASIL-B functional safety requirements.

Applications

Automotive ADAS Domain ControllerIndustrial PLC Firmware Storage

Use Scenario: Stores sensor fusion algorithms and real-time OS kernel for 77-GHz radar processing units.

IC Role / Device Role / Timing Role: Boot memory mapped at address 0x0000_0000; provides sub-100 ns instruction fetch latency to Cortex-R5F core.

Use Value: 333 MBps linear burst sustains DMA streaming of LIDAR point cloud buffers without CPU intervention.

Use Scenario: Holds programmable logic configuration and motion control firmware in modular I/O chassis.

IC Role / Device Role / Timing Role: Non-volatile storage for CODEC and safety monitor firmware; accessed via XMC4800's HYPERBUS™ master peripheral.

Use Value: 256-KB uniform sectors enable atomic firmware updates without disrupting real-time cyclic tasks.

Medical Imaging System Boot ROM5G Small Cell Baseband Processor Memory

Use Scenario: Stores boot loader and FPGA bitstream for ultrasound beamforming ASIC initialization.

IC Role / Device Role / Timing Role: Primary boot device for TriCore TC397; executes XIP (eXecute-In-Place) with DCARS timing alignment.

Use Value: ECC 1-bit correction ensures deterministic boot integrity under EMI-rich MRI room environments.

Use Scenario: Provides baseband firmware and protocol stack images for O-RAN compliant small cell radios.

IC Role / Device Role / Timing Role: High-speed code storage for TI C66x DSP cluster; accessed via EMIF with HYPERBUS™ timing constraints.

Use Value: Deep power-down current (4 µA) extends battery backup runtime during network maintenance windows.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY15B104QN-PSOC4 Mb density, FRAM technology, no erase cycles, 108 MHz max clock, SPI interfaceLimited to configuration storage or logging; lacks HYPERBUS™ bandwidth for XIP code executionSelect only when ultra-high endurance (>1012 cycles) and instant-write capability outweigh throughput needs.
S26KL256SDPBHI020Same 256 Mb density and FBGA-24 package but 3.0 V I/O, single-ended clock, 200 MBps max readCompatible pinout and command set; lower speed suits cost-sensitive industrial HMIs without DDR timing constraintsChoose for legacy 3.0 V systems or where differential clock routing is impractical on 4-layer PCBs.

Compared with CY15B104QN-PSOC, S26KS256SDPBHI020 delivers 166× higher read bandwidth and true XIP support, while S26KL256SDPBHI020 offers identical density and footprint with simplified clocking-making it ideal for migration paths from 3.0 V designs.

Availability

S26KS256SDPBHI020 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, and medical imaging system boot ROM requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S26KS256SDPBHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions for safety-critical systems.

This device belongs to the HYPERFLASH™ family, designed specifically to replace parallel NOR flash in high-performance boot and code storage applications where DDR bandwidth, low pin count, and AEC-Q100 qualification are mandatory.

FAQ

What is the minimum supported clock frequency for S26KS256SDPBHI020?

The device supports variable clock rates down to DC (0 Hz) in standby and deep power-down modes. For active read/write operations, the minimum functional clock frequency is 1 MHz, verified per Infineon's AC characteristics table in datasheet Rev. *Q Section 12.2. This enables flexible timing margining during system bring-up and low-power debug scenarios.

Does S26KS256SDPBHI020 support XIP (eXecute-In-Place) operation?

Yes, S26KS256SDPBHI020 supports true XIP operation with DCARS timing alignment. Its HYPERBUS™ interface allows the host processor to directly fetch instructions from flash without copying to RAM, validated for use with Infineon's AURIX™ TC3xx and XMC4000 families per Application Note AP32277.

How is the 512-byte program buffer utilized during write operations?

The 512-byte buffer accepts sequential 16-bit writes over the HYPERBUS™ interface and internally programs them in a single 475 µs operation. This eliminates per-word programming overhead, achieving ~1 MBps effective write speed-critical for rapid firmware field updates in automotive gateways.

What is the function of the PSC/PSC# pins on S26KS256SDPBHI020?

PSC (Power Supply Control) and PSC# are optional inputs used to coordinate external power sequencing. When asserted, they delay internal initialization until VCC/VCCQ stabilize within specification, preventing metastability during cold-start in multi-rail automotive domains like body control modules.

S26KS256SDPBHI020 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HYPERFLASH™ KS
Package/Case:
24-VBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NOR
Memory Size:
256Mbit
Memory Organization:
32M x 8
Memory Interface:
HyperBus
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
-
Access Time:
96 ns
Voltage - Supply:
1.7V ~ 1.95V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-FBGA (6x8)

S26KS256SDPBHI020 FAQ

1.How can I place an order for S26KS256SDPBHI020 through Aetrix?

Please submit a Request for Quotation (RFQ) for S26KS256SDPBHI020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S26KS256SDPBHI020 reliable?

The price and inventory of S26KS256SDPBHI020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KS256SDPBHI020 is usually 5 days.

3.What payment methods are accepted for S26KS256SDPBHI020?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KS256SDPBHI020 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S26KS256SDPBHI020?

S26KS256SDPBHI020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S26KS256SDPBHI020 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S26KS256SDPBHI020?

For technical support, including S26KS256SDPBHI020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KS256SDPBHI020 requirements.

6.How does Aetrix verify that S26KS256SDPBHI020 is sourced from the original manufacturer or authorized distributors?

All S26KS256SDPBHI020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KS256SDPBHI020 meets industry standards.

7.What is the process for return or replacement of S26KS256SDPBHI020?

All S26KS256SDPBHI020 units undergo pre-shipment inspection (PSI). If there is an issue with S26KS256SDPBHI020, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S26KS256SDPBHI020 part is unused and in its original packaging.

Return procedure for S26KS256SDPBHI020:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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