Infineon Technologies S26KS256SDPBHM023

Overview

S26KS256SDPBHM023 from Infineon is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used in automotive ADAS domain controllers for fast boot code execution.

For engineers reviewing the S26KS256SDPBHM023 datasheet, S26KS256SDPBHM023 pinout, S26KS256SDPBHM023 application, or S26KS256SDPBHM023 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns tACC), ECC 1-bit correction/2-bit detection, RWDS-synchronized DDR read alignment, and AEC-Q100 Grade 3 qualification for automotive use.

Technical Context

This device implements a DDR center-aligned read strobe (DCARS) architecture where RWDS transitions align with rising/falling edges of CK during read bursts, enabling precise data capture at 166 MHz. Command, address, and data all transfer over the same 8-bit DQ bus using double-data-rate signaling.

The embedded algorithm controller (EAC) fully manages program/erase operations-including 512-byte buffer programming (475 µs), 256-KB sector erase (930 ms), and volatile/non-volatile sector protection-without host intervention. Internal MIRRORBIT™ array architecture enables page-level random access with 32-byte aligned pages and half-page addressing.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KS256SDPBHM023, the Cypress alternative lacks automotive qualification but matches performance, while the Winbond part trades bandwidth and protocol sophistication for simpler interface integration and lower pin count.

Availability

S26KS256SDPBHM023 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, and medical imaging system boot memory requiring stable component supply and AEC-Q100-compliant lifecycle assurance.

Supply support for S26KS256SDPBHM023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to the HYPERFLASH™ family-designed specifically for automotive and industrial applications demanding high-speed, low-pin-count, ECC-protected NOR flash with deterministic timing and AEC-Q100 qualification.

FAQ

What is the function of the RWDS signal in S26KS256SDPBHM023?

RWDS (Read Data Strobe) is an output signal that indicates valid read data windows during DDR read operations. It is edge-aligned with data on the DQ bus and referenced to CK/CK# transitions. RWDS enables precise data capture timing at 166 MHz and is used exclusively for read strobing-not for write operations-ensuring deterministic setup/hold margins in high-speed interfaces.

Does S26KS256SDPBHM023 support both 1.8 V and 3.0 V operation?

No-S26KS256SDPBHM023 is specified for 1.8 V I/O operation only, with differential clock (CK/CK#) and 12-signal HYPERBUS™ interface. The "S" suffix in the part number denotes 1.8 V I/O compatibility. Devices supporting 3.0 V I/O have "L" suffix (e.g., S26KL256S) and use single-ended clock, different timing, and higher tACC.

How does the 512-byte program buffer improve firmware update efficiency?

The 512-byte buffer allows host processors to issue one command and stream 512 bytes of data, completing programming in ~475 µs (~1 MBps effective rate). This reduces CPU intervention versus single-word programming (500 µs per 2 bytes), cuts total update time by >95% for typical 64 KB firmware patches, and minimizes bus arbitration overhead in multi-master systems.

Is the RSTO# output configurable, and what is its role in system design?

Yes-RSTO# is a user-configurable open-drain output that generates a system-level power-on reset pulse. Its LOW duration is programmable via internal registers, allowing synchronization with flash initialization timing. It eliminates need for external reset supervisors in automotive ECUs and ensures deterministic boot sequencing between MCU and flash memory.