Infineon Technologies S26KS256SDPBHN020

Overview

S26KS256SDPBHN020 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sectors with optional 4-KB parameter sectors, and operates across –40°C to +105°C (Industrial Plus grade) for embedded boot code storage in high-reliability microcontroller systems.

For engineers reviewing the S26KS256SDPBHN020 datasheet, S26KS256SDPBHN020 pinout, S26KS256SDPBHN020 application, or S26KS256SDPBHN020 equivalent, key selection criteria include DDR timing compliance (96 ns random access, 118 ns CS# to first word), ECC 1-bit correction/2-bit detection, configurable burst lengths (16/32/64 bytes), low-power modes (25 µA standby, 4 µA deep power-down), and AEC-Q100 Grade 2 qualification for automotive control units.

Technical Context

This device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with RWDS synchronized to CK/CK# edges during reads. Internal MIRRORBIT™ architecture enables dual-half-page page access (32-byte aligned), and the embedded algorithm controller (EAC) autonomously executes sector erase and buffer programming without host intervention.

It uses center-aligned command/address capture and edge-aligned read-data capture relative to RWDS transitions. Burst operations support wrapped (circular) or linear (sequential) modes per transaction, with automatic next-page prefetch during linear bursts to sustain 333 MBps throughput - enabled by parallel array fetch and output staging.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KS256SDPBHN020, the Cypress alternative trades temperature range for minor cost savings without sacrificing performance, while the Winbond part represents a fundamentally different architecture - lower speed, no DDR timing, and no automotive qualification - making it suitable only for non-critical, low-bandwidth embedded systems.

Availability

S26KS256SDPBHN020 is available at Aetrix Electronics and suitable for automotive ADAS controllers, industrial PLCs, medical imaging boot systems, and 5G radio units requiring stable component supply, long-term lifecycle assurance, and AEC-Q100 Grade 2 compliance.

Supply support for S26KS256SDPBHN020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to Infineon's HYPERFLASH™ family - designed specifically to replace parallel NOR flash in high-performance embedded systems requiring DDR-speed access, low pin count, and automotive-grade reliability.

FAQ

What voltage levels does S26KS256SDPBHN020 support for core and I/O operation?

The device operates with 1.8 V VCC/VCCQ for both core and I/O - confirmed in Table 1 of the datasheet (Rev. *Q). It is not dual-voltage; the 3.0 V variant is a separate part number (e.g., S26KS256SDPBAH020). This simplifies power design by eliminating level-shifting circuitry in 1.8 V systems.

Does S26KS256SDPBHN020 require external termination resistors for CK/CK# or DQ signals?

Yes - the datasheet specifies 50 Ω series termination on CK/CK# and parallel Thevenin termination (25 Ω pull-up + 50 Ω pull-down) on DQ lines per JEDEC JESD209-4 guidelines. These are mandatory for signal integrity at 166 MHz DDR operation and must be placed within 5 mm of the FBGA balls.

How is the 512-byte program buffer utilized during write operations?

The buffer accepts up to 512 bytes in a single burst write transaction, then internally programs them in ~475 µs - achieving ~1 MBps effective throughput. Host software must issue a single "buffer write" command followed by 512 bytes of data; partial buffer writes are supported but reduce efficiency.

Can RSTO# be disabled or configured as a general-purpose output?

No - RSTO# is a dedicated open-drain reset output with fixed functionality. Its LOW pulse duration (programmable between 1–128 ms) is set via internal configuration registers during initialization, but the pin cannot be repurposed. It asserts automatically after power-on reset and may be re-triggered via software command.