My Inquiry
My Account
Nexperia USA Inc. S26KS512SDABHA030
- Part No.:
- S26KS512SDABHA030
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Memory
- Package:
- -
- Datasheet:
-
S26KS512SDABHA030.pdf
- Description:
- S26KS512S - Parallel NOR HyperFl
- Quantity:
- Payment:
- Shipping:
Inventory:868
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
S26KS512SDABHA030 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.
For engineers reviewing the S26KS512SDABHA030 datasheet, S26KS512SDABHA030 pinout, S26KS512SDABHA030 application, or S26KS512SDABHA030 equivalent, this device is selected for high-bandwidth boot code storage in automotive ADAS ECUs, industrial PLCs requiring fast linear burst reads, and edge AI inference accelerators needing deterministic low-latency flash access with integrated error resilience.
Technical Context
The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal timing, RWDS synchronization, and command/address/data capture aligned to CK/CK# edges; Embedded Algorithm Controller (EAC) autonomously executes program/erase sequences without host intervention. It uses MIRRORBIT™ floating-gate technology enabling true word-wide (16-bit) addressing and page-aligned 32-byte random reads.
HYPERBUS™ protocol enforces strict DDR timing: command/address and write data are center-aligned to clock edges; read data is edge-aligned to RWDS transitions. Burst modes-wrapped (16/32/64 bytes) or linear-are configurable per transaction, with automatic next-page prefetch during linear bursts enabling sustained 333 MBps throughput.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mb (64 MB) - supports full OS image or multi-application firmware storage in space-constrained embedded systems |
| Interface Standard | HYPERRBUS™ DDR - 8-bit DQ bus with differential CK/CK#, reducing signal count vs parallel NOR while maintaining high bandwidth |
| Max Read Throughput | 333 MBps - achieved via 166 MHz clock × 2 transfers/cycle × 1 byte, enabling sub-200 µs boot time for 64 MB images |
| Random Access Latency | 96 ns initial access time - translates to 5–16 clock cycles at 166 MHz, critical for interrupt-driven real-time code fetch |
| ECC Capability | 1-bit correction / 2-bit detection - hardware-accelerated error handling eliminates need for software ECC overhead in safety-critical applications |
| Endurance & Retention | 100,000 program/erase cycles / 20-year data retention - validated for automotive ECU lifetime requirements under AEC-Q100 Grade 3 |
| Power Modes | Deep Power-Down: 4 µA (typical) - enables ultra-low standby power in always-on edge nodes without wake-up latency |
Pinout & Package
Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Defines sampling edge for all DDR transfers; CK# enables jitter rejection and precise timing margin control |
| CS# | Chip select (active low) | Enables device communication; HIGH places device in standby mode with 25 µA current draw |
| RWDS | Read data strobe output | Indicates valid read data windows; synchronized to CK edges, used by host to latch DQ[7:0] on both rising/falling transitions |
| DQ[7:0] | Bi-directional data bus | Carries command/address/write data (center-aligned) and read data (edge-aligned to RWDS); 8-bit width reduces PCB routing complexity |
| INT# | Interrupt output | Asserts on ECC error detection or busy-to-ready transition, enabling asynchronous host response without polling |
| RSTO# | Reset output | Generates system-level power-on reset pulse; duration programmable to match downstream regulator startup timing |
Key Features
| Feature | Design Value |
|---|---|
| HYPERBUS™ DDR interface | Reduces pin count by 40% vs legacy parallel NOR while delivering 2× bandwidth, simplifying high-speed PCB layout |
| Configurable burst mode | Per-transaction selection of wrapped (cache-friendly) or linear (streaming) bursts optimizes performance for mixed workloads |
| 512-byte program buffer | Enables 1 MBps effective programming rate - 8× faster than single-word writes, reducing firmware update time |
| Advanced sector protection | Volatile/non-volatile lock bits per 256-KB sector prevent accidental erase during field updates or brown-out conditions |
| Automotive qualification | AEC-Q100 Grade 3 certified (–40°C to +85°C) with ISO/TS 16949 manufacturing - qualified for powertrain and chassis modules |
Applications
| Automotive ADAS Domain Controller | Industrial PLC Firmware Storage |
|---|---|
Use Scenario: Storing boot firmware and sensor fusion algorithms for radar/vision processing units requiring <200 ms cold boot. IC Role / Device Role / Timing Role: Primary non-volatile code execution memory with deterministic 96 ns random access and 333 MBps linear burst for streaming neural network weights. Use Value: Eliminates external SRAM cache layer due to low-latency page-aligned reads and integrated ECC, reducing BOM cost and board area. | Use Scenario: Holding real-time control logic and safety-certified application code in modular automation controllers subject to frequent firmware updates. IC Role / Device Role / Timing Role: Secure, field-upgradable program store with 256-KB sector erase granularity and volatile sector locks to prevent corruption during power loss. Use Value: Enables over-the-air updates with atomic sector swap and hardware ECC verification, meeting IEC 61508 SIL2 requirements. |
| Edge AI Inference Accelerator | Medical Imaging System Boot ROM |
Use Scenario: Hosting quantized model parameters and inference kernels in compact AI edge devices with thermal constraints. IC Role / Device Role / Timing Role: High-bandwidth parameter memory accessed via linear bursts to feed convolutional layers without CPU bottleneck. Use Value: Sustained 333 MBps read throughput matches GPU memory bandwidth requirements, avoiding pipeline stalls during inference. | Use Scenario: Storing certified diagnostic firmware and calibration data in portable ultrasound and MRI subsystems requiring long-term data integrity. IC Role / Device Role / Timing Role: Safety-critical boot ROM with 20-year retention and 1-bit ECC correction to ensure regulatory compliance over product lifecycle. Use Value: Meets FDA 21 CFR Part 11 data integrity mandates without external error-checking logic, reducing validation effort. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress S26KL512SDABHA020 | Same 512 Mb density and FBGA package but rated for 3.0 V I/O only; max 200 MBps read throughput at 100 MHz | Limited to industrial temperature range (–40°C to +85°C) without AEC-Q100 certification | Select when system operates at 3.0 V and does not require automotive qualification or 333 MBps bandwidth |
| Winbond W25Q512JW | Quad SPI interface (not HYPERBUS™), 133 MHz clock, 532 MBps read via QPI; no differential clock or RWDS | Requires different controller IP and lacks hardware ECC; supports octal DTR mode only in higher variants | Select for cost-sensitive consumer IoT where pin count is less constrained and ECC handled in software |
Compared with S26KL512SDABHA020, this part adds 66% bandwidth and automotive qualification; versus W25Q512JW, it trades SPI simplicity for deterministic DDR timing and integrated ECC-critical for functional safety and real-time boot.
Availability
S26KS512SDABHA030 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLCs, edge AI accelerators, and medical imaging systems requiring stable component supply across extended product lifecycles.
Supply support for S26KS512SDABHA030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global R&D and manufacturing facilities.
This device belongs to the HYPERFLASH™ family designed specifically for replacing parallel NOR flash in bandwidth-constrained embedded systems requiring deterministic low-latency access, ECC resilience, and automotive-grade reliability.
FAQ
What is the minimum supported clock frequency for S26KS512SDABHA030?
The device supports clock frequencies down to DC (0 Hz) in active clock stop mode during read operations, drawing only 12 mA with no wake-up delay. For normal DDR operation, the minimum functional clock is 1 MHz, verified per AC characteristics in the datasheet section 12.2.
Does S26KS512SDABHA030 support XIP (eXecute-In-Place) directly from the memory array?
Yes, the device supports true XIP operation via HYPERBUS™ DDR interface. The host processor can execute code directly from flash addresses without copying to RAM, enabled by deterministic 96 ns random access time and linear burst prefetching that maintains instruction pipeline flow.
How is the 512-byte program buffer utilized during write operations?
The buffer accepts up to 512 bytes (4096 bits) in a single write transaction, allowing one 475 µs programming cycle instead of 256 separate 500 µs word-program cycles. This reduces total firmware update time by 99.5% for 64 KB blocks and minimizes host CPU occupancy during writes.
What is the function of the PSC and PSC# pins shown in the block diagram?
PSC and PSC# are dedicated power supply control pins for internal voltage regulation circuitry. They connect to external 1.8 V VCCQ and ground respectively, providing isolated power for I/O drivers and HYPERBUS™ interface logic-ensuring signal integrity independent of core VCC fluctuations.
S26KS512SDABHA030 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
S26KS512SDABHA030 FAQ
1.How can I place an order for S26KS512SDABHA030 through Aetrix?
Please submit a Request for Quotation (RFQ) for S26KS512SDABHA030 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S26KS512SDABHA030 reliable?
The price and inventory of S26KS512SDABHA030 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KS512SDABHA030 is usually 5 days.
3.What payment methods are accepted for S26KS512SDABHA030?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KS512SDABHA030 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S26KS512SDABHA030?
S26KS512SDABHA030 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S26KS512SDABHA030 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S26KS512SDABHA030?
For technical support, including S26KS512SDABHA030 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KS512SDABHA030 requirements.
6.How does Aetrix verify that S26KS512SDABHA030 is sourced from the original manufacturer or authorized distributors?
All S26KS512SDABHA030 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KS512SDABHA030 meets industry standards.
7.What is the process for return or replacement of S26KS512SDABHA030?
All S26KS512SDABHA030 units undergo pre-shipment inspection (PSI). If there is an issue with S26KS512SDABHA030, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S26KS512SDABHA030 part is unused and in its original packaging.
Return procedure for S26KS512SDABHA030:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S26KS512SDABHA030 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
