Infineon Technologies S26KS512SDABHB030

Overview

S26KS512SDABHB030 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S26KS512SDABHB030 datasheet, S26KS512SDABHB030 pinout, S26KS512SDABHB030 application, or S26KS512SDABHB030 equivalent, this device serves as a high-bandwidth, low-latency non-volatile code storage solution for boot execution and firmware updates in real-time embedded systems requiring deterministic access and AEC-Q100-compliant reliability.

Technical Context

The S26KS512SDABHB030 implements a synchronous DDR interface over an 8-bit data bus using differential clocking (CK/CK#) and RWDS for precise read-data capture. Its MIRRORBIT™ architecture enables 16-bit word-aligned accesses with center-aligned command/address and edge-aligned read data relative to RWDS transitions.

It integrates dual control logic blocks: Host Interface Controller (HIC) handles real-time signal timing and data transfer coordination, while Embedded Algorithm Controller (EAC) executes autonomous program/erase sequences-including sector erase, buffer programming, and protection configuration-without host intervention during execution.

Key Specifications

Pinout & Package

Package: 24-ball Fortified Ball Grid Array (FBGA), 5 mm × 5 mm × 1.0 mm height, 0.8 mm ball pitch, VAA024 footprint per Infineon datasheet Rev. *Q, page 108.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL512SDABHB020, the S26KS512SDABHB030 adds AEC-Q100 Grade 2 qualification and tighter initial access timing; versus W25Q512JW, it trades SPI simplicity for 2.5× higher sustained read bandwidth and hardware ECC-critical for safety-critical boot paths.

Availability

S26KS512SDABHB030 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, medical imaging boot ROMs, and 5G small cell baseband processors requiring stable component supply, long-term lifecycle assurance, and AEC-Q100-compliant traceability.

Supply support for S26KS512SDABHB030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

The HYPERFLASH™ product line targets high-performance embedded systems needing deterministic, high-bandwidth non-volatile memory-designed specifically to replace parallel NOR in automotive, industrial, and communications infrastructure where pin count, power, and speed are critical.

FAQ

What is the minimum supported clock frequency for S26KS512SDABHB030?

The device supports variable clock rates down to DC (0 Hz) in standby and deep power-down modes. For active read/write operations, the minimum functional clock is 1 MHz per Infineon datasheet Section 12.2, enabling flexible timing adaptation in low-power wake-up scenarios without violating setup/hold margins.

Does S26KS512SDABHB030 support execute-in-place (XIP) operation?

Yes, the device supports true XIP via HYPERBUS™ DDR interface: the host processor can directly fetch instructions from flash without copying to RAM, enabled by deterministic 96 ns random access and linear burst streaming at 333 MBps-verified in Infineon application note AN227124.

How is the RSTO# pulse duration configured?

RSTO# LOW period is set via non-volatile configuration register bits [7:4] in the Device ID and CFI ASO map (address offset 0x0000_0020). Valid durations range from 1 ms to 128 ms in powers of two; default is 16 ms, and changes persist across power cycles without host reprogramming.

Can S26KS512SDABHB030 operate with only single-ended clock (CK) instead of differential (CK/CK#)?

No-differential clocking is mandatory for 1.8 V operation per datasheet Section 2.1 and Table 1. The device requires both CK and CK# inputs referenced to VSSQ; single-ended use violates AC timing specifications and causes undefined behavior during DDR data capture.