Nexperia USA Inc. S26KS512SDABHI030
- Part No.:
- S26KS512SDABHI030
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Memory
- Package:
- -
- Datasheet:
-
S26KS512SDABHI030.pdf
- Description:
- S26KS512S - Parallel NOR HyperFl
- Quantity:
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Inventory:911
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Product details
Overview
S26KS512SDABHI030 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial-plus temperature range (–40°C to +105°C) in 24-ball FBGA package for automotive and embedded boot code storage.
For engineers reviewing the S26KS512SDABHI030 datasheet, S26KS512SDABHI030 pinout, S26KS512SDABHI030 application, or S26KS512SDABHI030 equivalent, key selection criteria include DDR HYPERBUS™ timing compliance, RWDS-synchronized read latency (96 ns initial access), sector protection granularity, ECC capability, and AEC-Q100 Grade 2 qualification for automotive control units.
Technical Context
The device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with dual-edge sampling referenced to CK/CK#. Its internal MIRRORBIT™ architecture enables page-aligned 32-byte random reads and configurable burst modes (wrapped: 16/32/64 bytes; linear; hybrid).
Two dedicated controllers manage operation: Host Interface Controller (HIC) handles real-time signal timing, RWDS generation, and CS#-driven state transitions; Embedded Algorithm Controller (EAC) executes non-volatile programming/erase sequences-including 512-byte buffer writes and sector erases-without host intervention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mb (64 MB) - sufficient for full firmware images and secure boot partitions in automotive ECUs. |
| Interface Protocol | HYPERTBUS™ DDR - 8-bit bidirectional DQ bus with CK/CK# differential clock and RWDS read strobe for precise data capture timing. |
| Max Read Throughput | 333 MBps - achieved via 166 MHz clock × 2 transfers/cycle × 1 byte per transfer, enabling fast application loading. |
| Initial Random Access Time | 96 ns - defines minimum latency from CS# assertion to first valid data on DQ, critical for boot time optimization. |
| Endurance & Retention | 100,000 program/erase cycles / 20-year data retention - meets long-life requirements for industrial gateways and ADAS modules. |
| Operating Temperature | –40°C to +105°C (Industrial Plus) - qualified per AEC-Q100 Grade 2, suitable for under-hood automotive applications. |
| Power Modes | Deep Power-Down: 8 µA typical; Standby: 25 µA; Active Clock Stop during read: 12 mA - enables ultra-low-power firmware update states. |
Pinout & Package
Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Defines DDR timing reference; CK rising/falling edges sample command/address/data on DQ; CK# provides noise immunity. |
| CS# | Chip select (active low) | Enables device communication; HIGH places device in standby/deep power-down; controls transaction boundaries. |
| RWDS | Read data strobe output | Output-only signal synchronized to read data edges; indicates valid DQ data during read bursts; not used for writes. |
| DQ[7:0] | Bi-directional data bus | Carries commands, addresses, and 16-bit data (LSB/MSB per half-cycle); operates in DDR mode with 8-bit width. |
| INT# | Interrupt output | Active-low open-drain signal indicating Busy→Ready transition or ECC error detection event. |
| RSTO# | Reset output | Open-drain system-level reset signal; user-configurable LOW pulse duration for controlled power-on sequencing. |
Key Features
| Feature | Design Value |
|---|---|
| Configurable burst mode | Supports wrapped (16/32/64-byte), linear, or hybrid bursts - enables optimal cache-line alignment and DMA efficiency in SoC boot loaders. |
| 512-byte program buffer | Reduces write overhead by batching 32×16-bit words; achieves ~1 MBps effective programming rate vs. 4 KBps single-word writes. |
| Advanced sector protection | Volatile and non-volatile lock bits per 256-KB sector plus eight 4-KB parameter sectors - allows independent firmware partitioning and secure OTA update staging. |
| ECC & CRC support | On-the-fly 1-bit correction / 2-bit detection with CRC checksum on command/address transfers - ensures integrity of boot code execution path. |
| AEC-Q100 Grade 2 qualification | Validated for –40°C to +105°C operation with ISO/TS16949 process control - meets functional safety prerequisites for ASIL-B systems. |
Applications
| Automotive Engine Control Unit (ECU) | Industrial Programmable Logic Controller (PLC) |
|---|---|
Use Scenario: Storing calibrated engine maps, diagnostic firmware, and bootloader in a space-constrained ECU module. IC Role / Device Role / Timing Role: Primary non-volatile boot memory interfaced directly to MCU's HYPERBUS™ controller; provides sub-100 ns random access for fast cold start. Use Value: AEC-Q100 Grade 2 rating and 20-year retention ensure field reliability across vehicle lifetime; 333 MBps read speed reduces boot time by >40% vs. legacy parallel NOR. | Use Scenario: Hosting real-time control logic and configuration data in modular PLC backplanes with thermal cycling exposure. IC Role / Device Role / Timing Role: Firmware storage with hardware-based sector protection to prevent accidental overwrite during field updates. Use Value: 256-KB uniform sectors and optional 4-KB parameter sectors enable atomic firmware swaps; deep power-down mode (<8 µA) extends battery backup runtime during mains loss. |
| Medical Imaging System Boot Module | 5G Baseband Radio Unit (RU) |
Use Scenario: Secure boot image storage for FDA-cleared imaging processors requiring traceable firmware integrity. IC Role / Device Role / Timing Role: Trusted execution environment (TEE) root-of-trust memory with ECC-enabled read path and RSTO#-driven secure reset chain. Use Value: On-die ECC and CRC validation eliminate need for external error-checking logic; INT# signaling enables deterministic fault reporting to safety monitor. | Use Scenario: Storing FPGA configuration bitstreams and DSP firmware in outdoor RU enclosures subject to wide temperature swings. IC Role / Device Role / Timing Role: High-bandwidth configuration memory accessed via SoC's HYPERBUS™ PHY during power-up and dynamic reconfiguration. Use Value: 166 MHz DDR interface sustains 333 MBps burst reads - cuts FPGA configuration time by 3× vs. QSPI; extended temp range (–40°C to +105°C) eliminates derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed NOR flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress S26KL512SDABHI030 | Same die, identical electrical specs and pinout; rebranded pre-Infineon acquisition part - fully interchangeable. | No functional difference; same AEC-Q100 Grade 2 qualification and HYPERBUS™ timing behavior. | Select when sourcing legacy Cypress-designated BOMs or distributor stock with original branding. |
| Macronix MX25L51245G | Quad SPI interface (not HYPERBUS™); max 133 MHz QPI clock; no RWDS or differential clock; 512 Mb density only. | Lacks DDR timing precision and ECC support; requires different controller IP and PCB layout (single-ended clock, no CK#/RWDS traces). | Choose only if HYPERBUS™ controller is unavailable; expect ~60% lower sustained read bandwidth and no built-in ECC. |
Compared with S26KS512SDABHI030, the Cypress variant offers identical performance and drop-in compatibility, while the Macronix part trades interface speed and data integrity for broader controller availability and lower cost - making it viable only in non-safety-critical, cost-sensitive designs without DDR timing constraints.
Availability
S26KS512SDABHI030 is available at Aetrix Electronics and suitable for automotive engine control units, industrial PLCs, medical imaging boot modules, and 5G radio unit firmware storage requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for S26KS512SDABHI030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS16949.
The HYPERFLASH™ product line targets high-performance embedded boot and code storage applications requiring DDR-speed access, deterministic latency, and automotive-grade reliability - specifically engineered for next-generation ECU, ADAS, and industrial edge compute platforms.
FAQ
Is S26KS512SDABHI030 pin-compatible with earlier S26KS512S variants?
Yes - S26KS512SDABHI030 uses the identical 24-ball FBGA (VAA024) package and maintains full pin-to-pin compatibility with all S26KS512S family members, including identical CK/CK#, RWDS, DQ[7:0], CS#, INT#, and RSTO# signal assignments and timing behavior.
What is the purpose of the RWDS signal, and is it required for write operations?
RWDS is a read-data strobe output used exclusively during read transactions to indicate valid data timing on DQ[7:0]; it is not driven or used during write operations. The signal is edge-aligned to data transitions and referenced to CK/CK# edges, enabling precise DDR data capture by the host controller.
Does this device support software reset, or is RSTO# the only reset mechanism?
RSTO# is a dedicated hardware reset output signal generated by the device upon power-on or internal fault conditions; it is not software-controllable. The device does not implement a software-initiated reset command - reset sequencing must be managed externally using RSTO# in conjunction with system power management logic.
Can the 4-KB parameter sectors be used for storing calibration data independently of main firmware updates?
Yes - the eight optional 4-KB parameter sectors are individually lockable via volatile/non-volatile protection bits and reside in a separate address space. This allows calibration tables, sensor offsets, or configuration flags to be updated without erasing or risking corruption of the main 256-KB firmware sectors.
S26KS512SDABHI030 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- -
- Memory Format:
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- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
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- Clock Frequency:
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- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
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- Operating Temperature:
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- Grade:
- -
- Qualification:
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- Mounting Type:
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- Supplier Device Package:
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S26KS512SDABHI030 FAQ
1.How can I place an order for S26KS512SDABHI030 through Aetrix?
Please submit a Request for Quotation (RFQ) for S26KS512SDABHI030 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S26KS512SDABHI030 reliable?
The price and inventory of S26KS512SDABHI030 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KS512SDABHI030 is usually 5 days.
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Once your S26KS512SDABHI030 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S26KS512SDABHI030?
For technical support, including S26KS512SDABHI030 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KS512SDABHI030 requirements.
6.How does Aetrix verify that S26KS512SDABHI030 is sourced from the original manufacturer or authorized distributors?
All S26KS512SDABHI030 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KS512SDABHI030 meets industry standards.
7.What is the process for return or replacement of S26KS512SDABHI030?
All S26KS512SDABHI030 units undergo pre-shipment inspection (PSI). If there is an issue with S26KS512SDABHI030, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S26KS512SDABHI030 part is unused and in its original packaging.
Return procedure for S26KS512SDABHI030:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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