Nexperia USA Inc. S26KS512SDABHM030

Overview

S26KS512SDABHM030 from Infineon Technologies is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C). It is used in high-performance boot code storage for automotive ADAS controllers.

For engineers reviewing the S26KS512SDABHM030 datasheet, S26KS512SDABHM030 pinout, S26KS512SDABHM030 application, or S26KS512SDABHM030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), RWDS-synchronized DDR read alignment, sector protection granularity, deep power-down current (8 µA), and AEC-Q100 grade 3 qualification for automotive use.

Technical Context

This device implements a synchronous DDR interface over an 8-bit data bus using differential clocking (CK/CK#) and RWDS as a read-data strobe referenced to CK edges. It uses MIRRORBIT™ architecture with page-aligned 32-byte random reads and supports both wrapped (16/32/64-byte) and linear burst modes.

The embedded algorithm controller (EAC) manages all non-volatile operations - including 512-byte buffer programming (475 µs), 256-KB sector erase (930 ms), and volatile/non-volatile sector protection - without host intervention. ECC and CRC support ensure data integrity during read and program cycles.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with CY15B104QN-SXIT and S26KL512SDABHM020, the S26KS512SDABHM030 uniquely balances high density, DDR differential timing, automotive qualification, and power-optimized burst read - making it optimal for next-generation ADAS and safety-critical embedded boot systems.

Availability

S26KS512SDABHM030 is available at Aetrix Electronics and suitable for automotive ADAS modules, industrial PLCs, medical imaging subsystems, and avionics display controllers requiring stable component supply across extended product lifecycles.

Supply support for S26KS512SDABHM030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS16949.

The HYPERFLASH™ product line targets high-performance, low-pin-count boot memory for automotive and industrial applications where DDR speed, reliability, and AEC-Q100 compliance are mandatory.

FAQ

What is the minimum supported clock frequency for S26KS512SDABHM030?

The device supports variable clock rates down to DC for command execution, but functional DDR read/write operations require ≥1 MHz to maintain RWDS synchronization and internal timing margins. The datasheet specifies guaranteed operation from 1 MHz to 166 MHz at 1.8 V, with timing parameters validated across that full range.

Does S26KS512SDABHM030 support XIP (eXecute-In-Place) directly from the HYPERBUS™ interface?

Yes - the device supports true XIP mode via its synchronous DDR interface and deterministic 96 ns random access time. Host processors with native HYPERBUS™ controllers (e.g., NXP S32G, Renesas R-Car H3) can execute code directly from flash without copying to RAM, enabled by continuous burst read capability and low-latency address decoding.

How is the 512-byte program buffer utilized during write operations?

The buffer operates as a write-through FIFO: host writes up to 512 bytes of 16-bit words into the buffer via sequential DDR writes, then issues a program command. The embedded algorithm controller autonomously executes the buffer-to-array programming sequence in ~475 µs, freeing the host bus and enabling pipelined firmware updates.

Can RSTO# be disabled or repurposed as a general-purpose output?

No - RSTO# is a dedicated open-drain output with fixed functionality tied to internal power-on reset sequencing. Its LOW pulse duration is configurable via register bits, but the pin cannot be disabled or reassigned. It asserts synchronously with VCC ramp and deasserts after internal voltage stabilization, independent of CS# or command state.