Nexperia USA Inc. S26KS512SDABHN030

Overview

S26KS512SDABHN030 from Infineon Technologies is a 512 Mb (64 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, 100,000 program/erase cycles, and operates from –40°C to +105°C (Industrial Plus grade). Used in automotive ADAS domain controllers for fast boot code execution.

For engineers reviewing the S26KS512SDABHN030 datasheet, S26KS512SDABHN030 pinout, S26KS512SDABHN030 application, or S26KS512SDABHN030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns tACC), RWDS-synchronized DDR read alignment, ECC 1-bit correction/2-bit detection, and FBGA-24 package compatibility with high-density PCB layouts.

Technical Context

This device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfer, while Embedded Algorithm Controller (EAC) executes autonomous program/erase sequences without host intervention. It uses MIRRORBIT™ floating-gate technology for non-volatile storage and supports both wrapped (16/32/64-byte) and linear burst modes.

The HYPERBUS™ protocol transfers command, address, and data over the same 8-bit DQ bus in DDR fashion-two 16-bit words per clock cycle-with CK/CK# differential clocking enabling precise edge-aligned sampling. RWDS output is edge-aligned to CK transitions during reads, ensuring deterministic timing for high-speed host synchronization.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with S26KL512SDABHN020, this part adds INT#/RSTO# and extends temp range to +105°C-critical for under-hood ADAS. Versus MX25L51245GZC, it delivers 8.3× higher read bandwidth and native DDR timing control, eliminating host-side data alignment logic.

Availability

S26KS512SDABHN030 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, and medical imaging system boot applications requiring stable component supply, AEC-Q100 qualification, and long-term lifecycle support.

Supply support for S26KS512SDABHN030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to Infineon's HYPERFLASH™ family-designed specifically for high-speed, low-pin-count code storage in automotive and industrial systems where deterministic boot timing and functional safety compliance are mandatory.

FAQ

What is the purpose of the RWDS signal in S26KS512SDABHN030?

RWDS (Read Data Strobe) is an output signal synchronized to the rising and falling edges of CK during read operations. It indicates when valid data is present on DQ[7:0], allowing the host to latch data without relying on fixed clock-phase relationships. This eliminates timing skew between clock and data paths, enabling reliable 166 MHz DDR operation on dense PCBs.

Does S26KS512SDABHN030 support execute-in-place (XIP) operation?

Yes-S26KS512SDABHN030 supports true XIP via its HYPERBUS™ interface. The DDR protocol allows the host processor to fetch instructions directly from flash without buffering, provided the memory controller implements RWDS-synchronized read capture. This is confirmed in Section 4.3 of the datasheet (HYPERFLASH™ Read with DCARS timing).

How does the 512-byte program buffer improve write performance?

The 512-byte buffer enables burst programming: instead of writing one 16-bit word at a time (500 µs/word), the device accepts 32 consecutive 16-bit words in one command and programs them internally in 475 µs-achieving ~1 MBps throughput. This reduces firmware update time by 250× compared to single-word writes, critical for OTA deployments.

What is the function of the RSTO# output pin?

RSTO# is a user-configurable open-drain reset output that asserts a LOW pulse during power-on reset. Its duration is programmable via internal registers (Section 6.3), allowing system designers to meet specific SoC or FPGA reset timing requirements without external RC networks or dedicated reset ICs-reducing component count and board space.