Spansion S26KS512SDABHV030

Overview

S26KS512SDABHV030 from Infineon Technologies is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and read-data strobe (RWDS). It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial-plus temperature range (–40°C to +105°C).

For engineers reviewing the S26KS512SDABHV030 datasheet, S26KS512SDABHV030 pinout, S26KS512SDABHV030 application, or S26KS512SDABHV030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access, 118 ns CS# access @166 MHz), RWDS-synchronized DDR read alignment, configurable burst modes (16/32/64-byte wrapped or linear), and AEC-Q100 Grade 2 qualification for automotive embedded boot storage.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfer, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. All command/address/data traffic occurs over the same 8-bit DQ bus using DDR timing referenced to CK/CK# edges.

HYPERFLASH™ uses center-aligned command/address and edge-aligned read data relative to RWDS transitions. Initial random access requires 5–16 clock cycles latency, followed by burst reads from 32-byte pages composed of two 16-byte half-pages. Linear burst mode enables automatic prefetch of next page during current burst output to sustain 333 MBps throughput.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL512SDABHV030, the 3.0 V variant trades 66% bandwidth for broader voltage compatibility; versus S26KS256SDABHV030, the 512 Mb version doubles capacity for complex AI inference firmware while maintaining identical HYPERBUS™ timing and ECC robustness.

Availability

S26KS512SDABHV030 is available at Aetrix Electronics and suitable for automotive ADAS modules, industrial PLCs, medical imaging subsystems, and 5G radio units requiring stable component supply, long-term lifecycle assurance, and AEC-Q100-compliant flash memory.

Supply support for S26KS512SDABHV030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, connectivity, and security solutions for automotive, industrial, and IoT markets.

This device belongs to the HYPERFLASH™ family-designed specifically to replace parallel NOR and Quad-SPI flash in bandwidth-constrained embedded systems requiring deterministic, high-throughput code execution from external memory.

FAQ

What is the minimum supported burst length and how is it configured?

The minimum burst length is 16 bytes (8 clock cycles), selectable per transaction via command register bits. Burst type-wrapped or linear-is determined by the BURST_TYPE bit in the configuration register, and burst length is set using BURST_LEN bits. No hardware reset is needed to change burst parameters between operations; the setting persists until rewritten.

Does S26KS512SDABHV030 support execute-in-place (XIP) operation?

Yes, it supports XIP via HYPERBUS™ DDR interface with deterministic 96 ns random access and low-latency burst reads. The device outputs data aligned to RWDS edges, enabling tightly coupled instruction fetch without external buffering. XIP performance is validated up to 166 MHz clock with no wait states when interfaced to compatible SoC masters.

How does the 512-byte program buffer improve write efficiency?

The 512-byte buffer allows a single command to program an entire buffer segment in ~475 µs, achieving ~1 MBps effective write speed-over 200× faster than single-word programming (~4 KBps). This reduces host CPU intervention time and minimizes bus occupancy during firmware updates, critical for real-time systems with strict latency budgets.

Is RSTO# assertion synchronized to power rail stabilization?

Yes, RSTO# is driven LOW by internal power-on reset circuitry after VCC reaches 1.65 V and remains stable for ≥100 µs. Its duration is user-configurable (1–16 ms) via non-volatile register bits, allowing precise alignment with downstream FPGA or PMIC reset sequencing requirements without external RC networks.