Nexperia USA Inc. S26KS512SDGBHA030

Overview

S26KS512SDGBHA030 from Infineon Technologies is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used in high-performance embedded boot code storage for automotive ADAS ECUs.

For engineers reviewing the S26KS512SDGBHA030 datasheet, S26KS512SDGBHA030 pinout, S26KS512SDGBHA030 application, or S26KS512SDGBHA030 equivalent, key selection criteria include DDR HYPERBUS™ timing compliance, RWDS-synchronized read latency (96 ns initial access), sector protection configurability, deep power-down current (8 µA typ), and AEC-Q100 grade 3 qualification for automotive use.

Technical Context

This device implements a synchronous DDR interface using differential CK/CK# for precise timing capture and RWDS as a read-data-aligned strobe referenced to CK edges. Its internal MIRRORBIT™ architecture enables 16-bit word-wide accesses aligned to 16-byte boundaries, with dual half-page fetch logic enabling linear burst streaming at full 333 MBps.

The embedded algorithm controller (EAC) fully manages program/erase sequences-including 512-byte buffer programming (475 µs), 256-KB sector erase (930 ms), and volatile/non-volatile sector protection-without host intervention. ECC and CRC support ensure data integrity during reads and writes across 20-year retention and 100,000-cycle endurance.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KS512SDGBHA030, the Cypress alternative trades DDR performance and differential timing for simpler 3.0 V I/O compatibility, while the Winbond part abandons HYPERBUS™ entirely for QSPI-making it unsuitable for systems requiring deterministic low-latency boot or automotive qualification.

Availability

S26KS512SDGBHA030 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, medical imaging systems, and avionics display controllers requiring stable component supply, AEC-Q100 compliance, and guaranteed 20-year data retention.

Supply support for S26KS512SDGBHA030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS16949.

This device belongs to Infineon's HYPERFLASH™ family-designed specifically for high-speed, low-pin-count boot memory in automotive and industrial systems demanding deterministic timing, ECC protection, and extended temperature operation.

FAQ

What is the difference between RWDS and standard read strobes like RDY or BUSY?

RWDS is a DDR-aligned read data strobe output that toggles synchronously with valid data on DQ[7:0] during read bursts, referenced to CK/CK# edges. Unlike RDY/BUSY signals-which indicate device readiness or ongoing operations-RWDS directly gates data sampling, enabling precise timing capture without additional setup/hold margins.

Does S26KS512SDGBHA030 support both 1.8 V and 3.0 V I/O simultaneously?

No. This variant is specified for 1.8 V I/O operation only, with differential CK/CK# and 12-signal HYPERBUS™ interface. The 3.0 V I/O variants (e.g., S26KS512SDGBHA020) use single-ended CK and 11-signal interface. Mixing voltage domains is not supported and may damage the device.

How is ECC implemented and what happens on uncorrectable errors?

ECC uses dedicated on-die logic to compute and verify Hamming codes on every 512-byte page. Single-bit errors are corrected transparently; double-bit errors trigger the INT# pin and set status bits in the device's error register. No automatic retry occurs-the host must handle the error condition via software interrupt service.

Can the RSTO# output be disabled or reconfigured for other functions?

RSTO# is a dedicated open-drain output with fixed functionality: it asserts LOW during power-on reset and releases after a user-configurable delay (set via configuration register). It cannot be disabled or reassigned to alternate functions-it is hardwired to provide system-level reset coordination independent of host processor state.