Spansion S26KS512SDGBHI030

Overview

S26KS512SDGBHI030 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and AEC-Q100 Grade 2 qualification (–40°C to +105°C), deployed in automotive ADAS domain controllers for fast boot code execution.

For engineers reviewing the S26KS512SDGBHI030 datasheet, S26KS512SDGBHI030 pinout, S26KS512SDGBHI030 application, or S26KS512SDGBHI030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns tACC), RWDS-synchronized DDR read alignment, sector protection configurability, deep power-down current (8 µA), and FBGA-24 package compatibility with high-density PCB layouts.

Technical Context

This device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with read data edge-aligned to RWDS transitions and clock edges referenced to CK/CK#. The embedded algorithm controller (EAC) autonomously executes program/erase sequences without host intervention after command issuance.

It supports configurable burst modes-wrapped (16/32/64 bytes) or linear-with automatic page prefetch during linear bursts to sustain 333 MBps throughput. Initial random access latency is 5–16 clock cycles, and DCARS (DDR Center Aligned Read Strobe) ensures precise timing capture of read data under varying signal integrity conditions.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant, thermal pad optional.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KS512SDGBHI030, the Cypress alternative trades automotive qualification for broader industrial availability, while the Winbond part replaces HYPERBUS™ complexity with simpler QSPI but sacrifices deterministic timing, ECC, and throughput - making it unsuitable for ADAS or avionics boot paths.

Availability

S26KS512SDGBHI030 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, and medical imaging system boot memory requiring stable component supply across extended lifecycle programs.

Supply support for S26KS512SDGBHI030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to Infineon's HYPERFLASH™ family, designed specifically for high-bandwidth, low-pin-count firmware storage in automotive and industrial systems demanding AEC-Q100 compliance and deterministic DDR timing.

FAQ

What is the minimum supported VCCQ voltage for S26KS512SDGBHI030?

The device operates exclusively at 1.8 V for I/O (VCCQ); it does not support 3.0 V I/O mode. This is confirmed by the "DGB" suffix in the part number, which denotes 1.8 V I/O operation per Infineon's ordering matrix. Using 3.0 V on VCCQ violates absolute maximum ratings and may cause permanent damage.

Does S26KS512SDGBHI030 require external termination resistors for CK/CK#?

Yes - the datasheet specifies 100 Ω differential termination between CK and CK# near the device ball, and 49.9 Ω single-ended termination from each clock line to VDDQ. These values are mandatory to meet AC timing specifications and prevent signal integrity issues at 166 MHz DDR operation.

Can RWDS be used for write-data capture in this device?

No - RWDS is read-only and functions solely as a read data strobe. Write operations use CK/CK# edges for data capture on DQ[7:0]; RWDS remains inactive during writes. This unidirectional role is defined in Section 4.3 of the datasheet and enforced by internal logic.

How is the RSTO# pulse width configured?

RSTO# LOW duration is set via the Configuration Register (CR) bits [11:8], with programmable values from 1 ms to 128 ms in powers of two. Default is 16 ms. Configuration occurs during initialization via standard HYPERBUS™ command sequence (0x05 followed by 0x01), and persists across power cycles.