Infineon Technologies S26KS512SDGBHM030

Overview

S26KS512SDGBHM030 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used in high-performance embedded boot code storage for automotive ADAS controllers.

For engineers reviewing the S26KS512SDGBHM030 datasheet, S26KS512SDGBHM030 pinout, S26KS512SDGBHM030 application, or S26KS512SDGBHM030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns tACC), ECC 1-bit correction/2-bit detection, RWDS-synchronized DDR read alignment, and deep power-down current (8 µA typical) for low-power boot memory systems.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-synchronized data transfer, while Embedded Algorithm Controller (EAC) executes autonomous program/erase sequences without host intervention. All command/address/data traffic uses the same 8-bit DQ bus in DDR mode - two 8-bit transfers per clock cycle.

HYPERBUS™ protocol enforces strict timing: initial random access latency is 5–16 clock cycles; burst modes support wrapped (16/32/64-byte) or linear configurations; DCARS (DDR Center-Aligned Read Strobe) ensures precise edge-aligned read-data capture relative to RWDS transitions, not CK edges.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with S26KS512SDGBHM030, the S26KL512SDHBHI020 offers higher temperature resilience and stronger automotive validation, while the S26KS256SDGBHM020 trades capacity for cost and footprint efficiency - both retain identical HYPERBUS™ timing, ECC, and command set for seamless integration.

Availability

S26KS512SDGBHM030 is available at Aetrix Electronics and suitable for automotive ADAS controllers, industrial PLCs, 5G radio units, and medical imaging systems requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant flash memory.

Supply support for S26KS512SDGBHM030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and communications markets.

This part belongs to the HYPERFLASH™ family - designed specifically for high-bandwidth, low-pin-count boot and code storage in resource-constrained embedded systems using the standardized HYPERBUS™ interface.

FAQ

What voltage levels does S26KS512SDGBHM030 support for core and I/O operation?

The device operates with 1.8 V VCC/VCCQ supply for both core logic and I/O interface. It is not compatible with 3.0 V I/O signaling - this variant is strictly a 1.8 V part, as confirmed by ordering code suffix 'D' (1.8 V) and datasheet Table 14.1. Using 3.0 V on VCCQ will exceed absolute maximum ratings and cause permanent damage.

Does S26KS512SDGBHM030 require external termination resistors for the CK/CK# differential pair?

Yes, the datasheet specifies 100 Ω differential termination between CK and CK# at the memory device side. This is mandatory to maintain signal integrity at 166 MHz and meet setup/hold timing margins for command/address capture. Failure to implement proper termination results in read failures or intermittent ECC errors.

How is the 512-byte program buffer utilized during write operations?

The buffer accepts up to 512 bytes (4096 bits) of write data in a single burst transaction, then internally executes page programming in ~475 µs. This avoids repeated command overhead and achieves ~1 MBps effective write speed - significantly faster than single-word programming (500 µs per 2 bytes). Buffer usage is controlled via standard HYPERBUS™ write commands.

Can S26KS512SDGBHM030 be used in systems without a dedicated HYPERBUS™ master controller?

No - the device requires a native HYPERBUS™ master (e.g., NXP i.MX8, Renesas RZ/G2L, or Infineon AURIX™ TC4xx with HYPERBUS™ IP) to generate differential CK/CK#, manage RWDS synchronization, and execute DDR-aligned command sequences. Standard SPI or parallel NOR controllers cannot emulate the protocol timing or signal structure.