Nexperia USA Inc. S26KS512SDGBHN030

Overview

S26KS512SDGBHN030 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S26KS512SDGBHN030 datasheet, S26KS512SDGBHN030 pinout, S26KS512SDGBHN030 application, or S26KS512SDGBHN030 equivalent, this device serves as a high-bandwidth, low-latency non-volatile code storage solution for boot memory in automotive ADAS controllers, industrial PLCs, and real-time embedded systems requiring deterministic read access and AEC-Q100 grade 3 compliance.

Technical Context

The device implements a DDR center-aligned read strobe (DCARS) architecture where command/address and data are transferred over the same 8-bit DQ bus using double-data-rate timing referenced to CK/CK#. Read operations use RWDS as an edge-aligned output strobe synchronized to data transitions, enabling precise capture at the host controller.

Internally, it separates control into Host Interface Controller (HIC) for signal-level protocol handling and Embedded Algorithm Controller (EAC) for autonomous execution of program/erase sequences. Sector protection includes volatile and non-volatile lock bits per 256-KB sector, plus optional 4-KB parameter sectors and a 1024-byte one-time-programmable array.

Key Specifications

Pinout & Package

24-ball Fortified Ball Grid Array (FBGA) package, VAA024 footprint (5 mm × 5 mm, 0.8 mm ball pitch), compliant with JEDEC MO-270AB. Package supports automated optical inspection and high-reliability reflow profiles for automotive-grade assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash memory applications.

Compared with S26KL512SDGBHN030 and S26KS512SDGBHN020, the S26KS512SDGBHN030 offers optimal balance of 166 MHz performance, industrial temperature range, and AEC-Q100 Grade 3 qualification - making it the preferred choice for new ADAS and industrial control designs requiring both speed and automotive reliability.

Availability

S26KS512SDGBHN030 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLCs, medical imaging boot systems, and 5G baseband units requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant sourcing.

Supply support for S26KS512SDGBHN030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This part belongs to the HYPERFLASH™ family - designed specifically for high-speed, low-pin-count boot memory in automotive, industrial, and communications systems demanding deterministic read performance and long-term data integrity.

FAQ

What is the minimum wake-up time from Deep Power-Down mode?

The S26KS512SDGBHN030 requires 300 µs to exit Deep Power-Down mode and resume normal operation. During this period, CS# must remain HIGH and CK must be stable; no commands are accepted until the device signals readiness via INT# or internal status register polling.

Does this device support linear burst reads across page boundaries?

Yes - in linear burst mode, the device automatically fetches the next sequential 32-byte page from the MIRRORBIT™ array while bursting out the current page, enabling continuous 333 MBps throughput without host intervention or address incrementing.

How is ECC handled during read operations?

ECC is applied per 512-byte sector during read; detected 2-bit errors trigger the INT# pin and set the status register's ECC error flag. Correctable 1-bit errors are fixed transparently in hardware without CPU intervention or latency penalty.

Can RSTO# be disabled or configured for open-drain operation?

RSTO# is user-configurable via non-volatile mode register bits: it can be set to active-low push-pull with programmable pulse width (1–255 ms), or disabled entirely. Open-drain operation is not supported; external pull-up is required if interfacing to voltage domains differing from VCCQ.