Nexperia USA Inc. S26KS512SDPBHA020
- Part No.:
- S26KS512SDPBHA020
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Memory
- Package:
- -
- Datasheet:
-
S26KS512SDPBHA020.pdf
- Description:
- S26KS512S - Parallel NOR HyperFl
- Quantity:
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Inventory:1,000
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Product details
Overview
S26KS512SDPBHA020 from Infineon Technologies is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.
For engineers reviewing the S26KS512SDPBHA020 datasheet, S26KS512SDPBHA020 pinout, S26KS512SDPBHA020 application, or S26KS512SDPBHA020 equivalent, key selection criteria include DDR HYPERBUS™ timing compliance, RWDS-synchronized read latency (96 ns initial access), sector protection granularity, deep power-down current (8 µA), and AEC-Q100 grade compatibility for automotive boot code storage.
Technical Context
The device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with dual-edge sampling referenced to CK/CK#. Its embedded algorithm controller (EAC) autonomously executes program/erase sequences without host intervention, using a 512-byte write buffer to achieve ~1 MBps buffered programming.
HYPERFLASH™ uses MIRRORBIT™ architecture enabling 16-bit word-wide accesses on 8-bit DDR bus; read bursts support configurable wrapped (16/32/64 bytes) or linear modes, and DCARS (DDR Center-Aligned Read Strobe) aligns read data edges to RWDS transitions-not clock edges-ensuring timing robustness across voltage/temperature variations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mb (64 MB) - supports full firmware images for high-end microcontrollers and SoCs. |
| Interface Protocol | HYPERRBUS™ DDR - reduces pin count vs parallel NOR while sustaining 333 MBps read bandwidth. |
| Max Clock Rate | 166 MHz at 1.8 V - enables 333 MBps throughput via dual-edge DQ transfers. |
| Initial Access Time | 96 ns - defines minimum latency before first valid read word appears on DQ. |
| ECC Capability | 1-bit correction / 2-bit detection - protects against single-bit errors in boot-critical code storage. |
| Power Modes | Deep Power-Down: 8 µA (typical); Standby: 25 µA - enables ultra-low-power retention in always-on systems. |
| Endurance & Retention | 100,000 program/erase cycles; 20-year data retention - suitable for field-upgradable firmware storage. |
Pinout & Package
Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Defines DDR timing reference; CK rising/falling edges sample command/address/data on DQ. |
| CS# | Chip select (active low) | Enables device communication; HIGH places device in standby or deep power-down mode. |
| RWDS | Read data strobe output | Indicates valid read data windows; edges aligned to DQ transitions-not CK-per DCARS protocol. |
| DQ[7:0] | Bi-directional DDR data bus | Carries commands, addresses, and 16-bit data (LSB/MSB per half-cycle); no separate address bus required. |
| INT# | Interrupt output | Asserts on ECC error detection or busy-to-ready transition, enabling host event-driven polling. |
| RSTO# | Reset output | Generates system-level power-on reset pulse; LOW duration user-configurable via internal register. |
Key Features
| Feature | Design Value |
|---|---|
| Configurable burst mode | Wrapped (16/32/64 bytes) or linear bursts per transaction-enables optimization for cache line fetch vs sequential streaming. |
| Output drive strength control | Programmable via configuration register-reduces signal integrity issues on long PCB traces or high-capacitance loads. |
| Advanced sector protection | Volatile and non-volatile lock bits per 256-KB sector-prevents accidental overwrite of bootloader or calibration data. |
| One-time programmable (OTP) array | 1024-byte dedicated region-stores immutable keys, serial numbers, or security certificates. |
| Hardware CRC generation | On-the-fly checksum during read/write-detects transmission errors without host CPU overhead. |
Applications
| Automotive ADAS Boot Memory | Industrial PLC Firmware Storage |
|---|---|
Use Scenario: Stores boot code and safety-critical firmware for radar ECU in ISO 26262 ASIL-B systems. IC Role / Device Role / Timing Role: Non-volatile boot memory accessed via HYPERBUS™ interface during cold start; RWDS-synchronized reads ensure deterministic timing under voltage droop. Use Value: AEC-Q100 Grade 2 qualification (–40°C to +105°C), 20-year retention, and ECC guarantee firmware integrity across vehicle lifetime. | Use Scenario: Holds field-upgradable ladder logic and motion control algorithms in modular PLC backplanes. IC Role / Device Role / Timing Role: High-bandwidth firmware storage interfaced to ARM Cortex-A MPU via HYPERBUS™; 333 MBps read sustains real-time code execution from XIP. Use Value: 256-KB uniform sectors enable atomic firmware updates; deep power-down (8 µA) extends battery backup runtime during mains failure. |
| Medical Imaging System Code Storage | 5G Baseband Processor Boot ROM |
Use Scenario: Stores diagnostic imaging firmware and calibration tables in FDA-cleared ultrasound platforms. IC Role / Device Role / Timing Role: Secure, tamper-resistant code storage with OTP array for device-specific keys and regulatory compliance data. Use Value: Hardware CRC and ECC prevent corrupted image reconstruction; industrial temperature rating ensures reliability in clinical environments. | Use Scenario: Provides boot image for multi-core baseband SoC in massive-MIMO 5G radio units. IC Role / Device Role / Timing Role: Low-latency, high-throughput boot memory enabling sub-100ms system startup; RWDS-aligned reads minimize jitter in time-sensitive PHY initialization. Use Value: 96 ns initial access and 166 MHz DDR interface meet strict boot timing budgets; 100K endurance supports frequent field upgrades. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed NOR flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress S26KL512SDPBHA020 | Same die, identical electrical specs and pinout; rebranded post-Infineon acquisition. | No functional difference; legacy design-in may retain Cypress part number for BOM continuity. | Select when maintaining legacy documentation or distributor stock alignment with pre-acquisition naming. |
| Macronix MX66L51235FMI-10G | Octal SPI interface (not HYPERBUS™); 104 MHz max clock; no RWDS or differential clock. | Lacks DDR timing precision and deterministic read latency; unsuitable for XIP-critical boot paths. | Choose only if system lacks HYPERBUS™ controller and requires SPI-compatible migration path with lower bandwidth. |
Compared with S26KS512SDPBHA020, the Cypress variant offers identical performance and drop-in compatibility, while the Macronix part trades HYPERBUS™ timing determinism for SPI simplicity-making it viable only where DDR latency constraints are relaxed and controller resources limit interface options.
Availability
S26KS512SDPBHA020 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, and medical imaging systems requiring stable component supply, long-term lifecycle support, and AEC-Q100 qualified flash memory.
Supply support for S26KS512SDPBHA020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and communications markets.
This device belongs to the HYPERFLASH™ family-designed specifically to replace parallel NOR flash in high-performance boot and code storage applications where pin count reduction and DDR bandwidth are critical.
FAQ
What is the purpose of the RWDS signal in S26KS512SDPBHA020?
RWDS (Read Data Strobe) is an output signal synchronized to read data transitions-not the clock-and indicates valid data windows on the DQ bus. It enables precise edge-aligned sampling of DDR read data per the DCARS protocol, eliminating setup/hold timing dependency on CK/CK# skew and improving robustness across voltage/temperature variations.
Does S26KS512SDPBHA020 support both 1.8 V and 3.0 V operation?
No-S26KS512SDPBHA020 is a 1.8 V I/O device with differential clock (CK/CK#) and supports only 1.8 V VCCQ. The 3.0 V variants (e.g., S26KL512S) use single-ended clock and different timing; mixing voltages risks interface failure and violates absolute maximum ratings.
How does the 512-byte write buffer improve programming efficiency?
The internal 512-byte buffer allows host to issue one command followed by up to 512 bytes of data, reducing command overhead. Buffer programming achieves ~1 MBps throughput-over 200× faster than single-word programming (4 KBps)-and minimizes host CPU intervention during firmware updates.
Can S26KS512SDPBHA020 be used in AEC-Q100 Grade 1 applications?
No-this specific part number (PBHA020 suffix) is rated for Industrial (–40°C to +85°C) and Automotive Grade 2 (–40°C to +105°C). Grade 1 (–40°C to +125°C) requires PBHA120 or PBHA220 suffix variants, which undergo extended temperature screening and qualification testing per AEC-Q100 Rev G.
S26KS512SDPBHA020 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- -
- Memory Format:
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- Technology:
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- Memory Size:
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- Memory Organization:
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- Memory Interface:
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- Clock Frequency:
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- Write Cycle Time - Word, Page:
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- Access Time:
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- Voltage - Supply:
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- Operating Temperature:
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- Grade:
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- Qualification:
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- Mounting Type:
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- Supplier Device Package:
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S26KS512SDPBHA020 FAQ
1.How can I place an order for S26KS512SDPBHA020 through Aetrix?
Please submit a Request for Quotation (RFQ) for S26KS512SDPBHA020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S26KS512SDPBHA020 reliable?
The price and inventory of S26KS512SDPBHA020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KS512SDPBHA020 is usually 5 days.
3.What payment methods are accepted for S26KS512SDPBHA020?
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4.How is shipping managed for S26KS512SDPBHA020?
S26KS512SDPBHA020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S26KS512SDPBHA020 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S26KS512SDPBHA020?
For technical support, including S26KS512SDPBHA020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KS512SDPBHA020 requirements.
6.How does Aetrix verify that S26KS512SDPBHA020 is sourced from the original manufacturer or authorized distributors?
All S26KS512SDPBHA020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KS512SDPBHA020 meets industry standards.
7.What is the process for return or replacement of S26KS512SDPBHA020?
All S26KS512SDPBHA020 units undergo pre-shipment inspection (PSI). If there is an issue with S26KS512SDPBHA020, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S26KS512SDPBHA020 part is unused and in its original packaging.
Return procedure for S26KS512SDPBHA020:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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