Infineon Technologies S26KS512SDPBHA023

Overview

S26KS512SDPBHA023 from Infineon Technologies is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used in high-performance embedded boot code storage for automotive ADAS ECUs.

For engineers reviewing the S26KS512SDPBHA023 datasheet, S26KS512SDPBHA023 pinout, S26KS512SDPBHA023 application, or S26KS512SDPBHA023 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access, 118 ns CS# to first word), RWDS-synchronized DDR read alignment, sector protection granularity, deep power-down current (8 µA), and AEC-Q100 grade 3 qualification for automotive use.

Technical Context

The device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with dual-edge sampling referenced to CK/CK#. Its internal MIRRORBIT™ architecture enables page-aligned 32-byte random reads with 5–16 clock-cycle initial latency and configurable burst modes (wrapped: 16/32/64 bytes; linear; hybrid).

Two dedicated controllers manage operation: Host Interface Controller (HIC) handles real-time signal capture and data transfer coordination, while Embedded Algorithm Controller (EAC) executes non-volatile memory operations-including 512-byte buffer programming (475 µs), 256-KB sector erase (930 ms), and volatile/non-volatile sector protection-without host intervention.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KS512SDPBHA023, the S26KL512SDPBHA020 offers higher temperature resilience without performance trade-offs, while the S26KS256SDPBHA020 reduces cost and footprint at the expense of storage headroom-both retain identical HYPERBUS™ protocol implementation and ECC architecture.

Availability

S26KS512SDPBHA023 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, and medical imaging system boot ROMs requiring stable component supply across extended product lifecycles.

Supply support for S26KS512SDPBHA023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS16949.

This device belongs to the HYPERFLASH™ family-designed specifically for high-bandwidth, low-pin-count boot memory in safety-critical embedded systems where DDR NOR performance and AEC-Q100 compliance are mandatory.

FAQ

What is the purpose of the RWDS signal in S26KS512SDPBHA023?

RWDS (Read Data Strobe) is an output signal synchronized to CK/CK# edges that indicates valid data windows on the DQ bus during read operations. It enables precise timing capture of DDR-read data by the host controller, eliminating setup/hold margin concerns. RWDS is not used during write operations and remains inactive when CS# is deasserted.

Does S26KS512SDPBHA023 support execute-in-place (XIP) operation?

Yes, S26KS512SDPBHA023 supports XIP via its HYPERBUS™ DDR interface, allowing microcontrollers to fetch and execute instructions directly from flash without loading into RAM. This is enabled by deterministic 96 ns random access time and continuous burst read capability up to 333 MBps, verified in Infineon's application note AN229224.

How does the 512-byte program buffer improve write efficiency?

The 512-byte buffer allows the host to issue a single program command followed by up to 512 bytes of data, completing the entire write in 475 µs. This reduces host CPU overhead by ~8× compared to single-word programming (500 µs per 2-byte word), significantly accelerating firmware updates and configuration writes in production test environments.

What protection mechanisms prevent unintended writes during power transitions?

S26KS512SDPBHA023 uses hardware-based Power Supply Control (PSC/PSC#) inputs to detect voltage ramp conditions. When active, they disable internal write logic and lock sector protection registers until stable VCC is confirmed-preventing corruption during brown-out or hot-plug events, as specified in Section 11.7 of the datasheet.