Infineon Technologies S26KS512SDPBHB023

Overview

S26KS512SDPBHB023 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used for high-speed boot code storage in automotive ADAS ECUs.

For engineers reviewing the S26KS512SDPBHB023 datasheet, S26KS512SDPBHB023 pinout, S26KS512SDPBHB023 application, or S26KS512SDPBHB023 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access, 118 ns CS# to first word), RWDS-synchronized DDR read alignment, sector protection granularity, deep power-down current (8 µA), and AEC-Q100 grade 3 qualification.

Technical Context

This device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with dual-edge sampling referenced to CK/CK#. Read operations use RWDS as an edge-aligned output strobe synchronized to data transitions, while write operations rely on center-aligned clock capture.

The embedded algorithm controller (EAC) manages all non-volatile memory operations-including 512-byte buffer programming (475 µs), 256-KB sector erase (930 ms), and volatile/non-volatile sector protection-without host intervention. DCARS (DDR Center Aligned Read Strobe) ensures precise timing alignment between CK edges and data valid windows during burst reads.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial NOR flash applications.

Compared with S26KS512SDPBHB023, the Cypress alternative offers extended thermal range but identical pinout and protocol, whereas Winbond's Octal SPI part requires interface redesign and delivers lower sustained throughput despite comparable density.

Availability

S26KS512SDPBHB023 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, medical imaging systems, and avionics display processors requiring stable component supply across multi-year production cycles.

Supply support for S26KS512SDPBHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and high-reliability memory solutions, with ISO/TS 16949 certification and global automotive supply chain integration.

This device belongs to Infineon's HYPERFLASH™ family-designed specifically for replacing parallel NOR flash in bandwidth-constrained, safety-critical embedded systems requiring deterministic boot performance and long-term data integrity.

FAQ

What is the minimum supported clock frequency for S26KS512SDPBHB023?

The device supports clock frequencies down to DC (0 Hz) in standby and deep power-down modes. For active read/write operations, the minimum functional clock rate is 1 MHz, verified per AC characteristics in datasheet Rev. *Q Section 12.2. This allows flexible timing margining during system initialization and low-frequency debug scenarios without violating setup/hold requirements on DQ or RWDS.

Does S26KS512SDPBHB023 support execute-in-place (XIP) operation?

Yes, S26KS512SDPBHB023 supports true XIP operation via its synchronous HYPERBUS™ interface. The DDR protocol enables continuous instruction fetch without CPU wait states at 166 MHz, and the 96 ns random access time ensures immediate vector response. XIP is implemented in hardware with no external glue logic required, as confirmed in Section 1.2 and Figure 1 of the datasheet.

How is the 512-byte program buffer utilized during write operations?

The 512-byte buffer enables burst programming of aligned 512-byte pages in 475 µs (typical), achieving ~1 MBps throughput-2000× faster than single-word programming. Host writes fill the buffer via DQ bus using standard HYPERBUS™ write commands; the embedded algorithm controller then executes internal page programming autonomously, freeing the bus for other transactions during the 475 µs internal cycle.

Can RWDS be disabled or repurposed for general I/O?

No, RWDS is a dedicated, unidirectional output strictly tied to read-data validity timing and cannot be disabled or reassigned. Its edge-aligned relationship to data transitions is fundamental to HYPERBUS™ DDR timing compliance. Attempting to suppress or ignore RWDS violates the protocol specification and results in corrupted read data, as explicitly stated in Section 4.3 and Figure 4-5 of the datasheet.