Infineon Technologies S26KS512SDPBHI020

Overview

S26KS512SDPBHI020 from Infineon Technologies is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package for embedded boot code storage in automotive ADAS controllers.

For engineers reviewing the S26KS512SDPBHI020 datasheet, S26KS512SDPBHI020 pinout, S26KS512SDPBHI020 application, or S26KS512SDPBHI020 equivalent, key selection criteria include DDR HYPERBUS™ timing compliance, RWDS-synchronized read latency (96 ns tACC), sector protection configuration, deep power-down current (8 µA), and AEC-Q100 grade 3 qualification for automotive use.

Technical Context

The device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with dual-edge sampling referenced to CK/CK#. Read operations use RWDS as an edge-aligned output strobe synchronized to data transitions, while internal MIRRORBIT™ architecture enables concurrent page fetch and burst output to sustain 333 MBps throughput.

It integrates two independent control units: Host Interface Controller (HIC) handles real-time signal monitoring and data transfer coordination, while Embedded Algorithm Controller (EAC) executes non-volatile memory operations-including 256-KB sector erase and 512-byte buffer programming-without host intervention, using internally managed command sequences.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KS512SDPBHI020, the Cypress-branded variant offers identical functionality and drop-in compatibility, while the Macronix alternative trades HYPERBUS™ simplicity and automotive qualification for higher bandwidth and density at the cost of controller redesign and qualification effort.

Availability

S26KS512SDPBHI020 is available at Aetrix Electronics and suitable for automotive ADAS controllers, industrial PLCs, medical imaging systems, and avionics display units requiring stable component supply, AEC-Q100 qualification, and long-term data retention.

Supply support for S26KS512SDPBHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to the HYPERFLASH™ family-designed specifically for high-bandwidth, low-pin-count boot memory in safety-critical automotive and industrial systems requiring deterministic timing and long-term reliability.

FAQ

What is the purpose of the RWDS signal in S26KS512SDPBHI020?

RWDS (Read Data Strobe) is an output signal that indicates valid data presence on the DQ[7:0] bus during read operations. It is edge-aligned with data transitions and referenced to CK/CK# edges, allowing the host controller to accurately sample DDR data without relying solely on clock phase alignment. This eliminates setup/hold timing margin concerns in high-speed layouts.

Does S26KS512SDPBHI020 support both 1.8 V and 3.0 V I/O operation?

No-S26KS512SDPBHI020 is specified for 1.8 V I/O operation only, with differential clock inputs (CK/CK#) and 12-signal HYPERBUS™ interface. The 3.0 V I/O variant is designated separately (e.g., S26KL512SDPBHI020 with single-ended clock). Mixing voltage domains violates absolute maximum ratings and risks permanent damage.

How does the 512-byte program buffer improve write performance?

The 512-byte buffer enables burst programming at ~1 MBps-over 200× faster than single-word programming (~4 KBps). By loading one buffer full of data before issuing the program command, the device executes internal write algorithms without host intervention, reducing CPU overhead and improving firmware update efficiency in resource-constrained systems.

Is RSTO# output configurable, and what is its default behavior?

Yes-RSTO# pulse duration is user-configurable via non-volatile register bits. By default, it asserts LOW for 100 ms after power stabilization to meet typical SoC reset timing requirements. Configuration is performed through standard command sequences and persists across power cycles, enabling adaptation to diverse host processor reset specifications.