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Infineon Technologies S26KS512SDPBHM020

Part No.:
S26KS512SDPBHM020
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
24-VBGA
Datasheet:
AetrixS26KS512SDPBHM020.pdf
Description:
IC FLASH 512MBIT HYPERBUS 24FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:131

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Product details

Overview

S26KS512SDPBHM020 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C). It is used in high-performance boot code storage for automotive ADAS controllers.

For engineers reviewing the S26KS512SDPBHM020 datasheet, S26KS512SDPBHM020 pinout, S26KS512SDPBHM020 application, or S26KS512SDPBHM020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns tACC), RWDS-synchronized DDR read alignment, sector protection granularity, deep power-down current (8 µA), and AEC-Q100 grade 3 qualification for automotive use.

Technical Context

The device implements a DDR center-aligned read strobe (DCARS) architecture where command/address and data are transferred over the same 8-bit DQ bus using double-data-rate signaling synchronized to CK/CK#. Read operations require initial latency of 5–16 clock cycles and support configurable burst lengths (16/32/64 bytes) with wrapped or linear modes.

Internally, it separates host interface control (HIC) and embedded algorithm control (EAC): HIC handles real-time signal capture and data transfer timing, while EAC executes non-volatile programming/erase sequences-including 256-KB sector erase, 512-byte buffer programming, and volatile/non-volatile sector protection-without host intervention.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 512 Mb (64 MB) - supports full OS image or multi-application firmware storage in space-constrained embedded hosts.
Interface Protocol HYPERRBUS™ DDR - uses single 8-bit DQ bus for both commands and data, reducing PCB trace count vs. parallel NOR or QSPI.
Max Read Throughput 333 MBps - achieved via 166 MHz differential clock and dual-edge DQ transfers, enabling fast boot and XIP execution.
Random Access Time 96 ns tACC - enables low-latency instruction fetch critical for real-time safety-critical applications.
ECC Capability 1-bit correction / 2-bit detection - mitigates soft errors in automotive environments without requiring external error-handling logic.
Power Modes Deep Power-Down: 8 µA (typical); Active Clock Stop: 12 mA - allows dynamic power gating during idle periods in always-on ECUs.
Endurance & Retention 100,000 program/erase cycles; 20-year data retention - meets long-life requirements for automotive infotainment and gateway modules.

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Pin/Terminal Circuit Role Design Meaning
CK / CK# Differential clock input Provides precise edge-aligned timing reference for DDR data capture; eliminates single-ended clock skew in high-speed routing.
CS# Chip select (active-low) Enables device communication; must be asserted before command initiation and held active during burst transactions.
RWDS Read data strobe output Indicates valid read data windows on DQ; edges aligned to data transitions, not clock-enables robust source-synchronous timing.
DQ[7:0] Bi-directional DDR data bus Carries commands, addresses, and data in time-multiplexed DDR format; requires matched-length traces for signal integrity at 166 MHz.
INT# Interrupt output Asserts on Busy→Ready transition or ECC error detection-enables asynchronous host notification without polling.
RSTO# Reset output Generates system-level power-on reset pulse; duration configurable via internal register for compatibility with diverse PMICs.

Key Features

Feature Design Value
HYPERBUS™ DDR Interface Reduces signal count to 11 pins (vs. ≥24 for x16 parallel NOR), simplifying layout and improving noise immunity in dense automotive PCBs.
Configurable Burst Mode Supports wrapped (cache-friendly) or linear (streaming) bursts per transaction-optimizes bandwidth utilization for mixed code/data access patterns.
512-Byte Program Buffer Enables 1 MBps effective write speed (vs. 4 KBps for single-word programming), accelerating firmware updates in production and field service.
Volatile & Non-Volatile Sector Protection Allows runtime lock/unlock of 256-KB sectors plus optional 4-KB parameter sectors-secures bootloader and calibration data against accidental overwrite.
AEC-Q100 Grade 3 Qualification Validated for –40°C to +85°C operation with ISO/TS16949 manufacturing controls-meets functional safety requirements for ASIL-B systems.

Applications

Automotive ADAS Domain Controller Industrial PLC Firmware Storage

Use Scenario: Stores boot firmware and real-time perception algorithms for radar/vision fusion processors.

IC Role / Device Role / Timing Role: High-speed XIP-capable code storage with sub-100 ns random access and deterministic burst reads.

Use Value: Enables <100 ms cold boot time and zero-latency instruction fetch under ASIL-B timing constraints.

Use Scenario: Holds field-upgradable control logic and configuration data in modular automation hardware.

IC Role / Device Role / Timing Role: Non-volatile program storage with sector-level write protection and ECC for mission-critical runtime integrity.

Use Value: Prevents unauthorized firmware modification and ensures 20-year data validity in unattended factory deployments.

Telecom Baseband Unit Medical Imaging System Boot Memory

Use Scenario: Hosts FPGA configuration bitstreams and DSP firmware in 5G remote radio units with thermal cycling.

IC Role / Device Role / Timing Role: High-reliability, low-power flash with deep power-down mode activated between transmit bursts.

Use Value: Reduces average system power by >40% during standby while maintaining instant wake-up capability.

Use Scenario: Stores certified diagnostic software and calibration tables in FDA-cleared MRI subsystems.

IC Role / Device Role / Timing Role: AEC-Q100 qualified, ECC-protected boot memory meeting IEC 62304 Class C software lifecycle requirements.

Use Value: Eliminates need for external error-correction logic, reducing BOM cost and validation effort for regulatory submission.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Alternative Part Technical Difference Application Difference Selection Advice
Cypress S26KL512SDPBHM020 Same die, identical electrical specs and pinout; differs only in branding and packaging marking per Infineon's post-acquisition rebranding. No functional difference; accepted interchangeably in legacy designs originally specified with Cypress part number. Select when sourcing from legacy inventory or cross-referencing Cypress-designated BOMs.
Macronix MX25L51245G Quad SPI interface (4-wire), max 133 MHz, no differential clock or RWDS; lacks HYPERBUS™ DDR timing and DCARS alignment. Suitable for cost-sensitive consumer applications but cannot replace S26KS512SDPBHM020 in HYPERBUS™-based SoC platforms (e.g., TI Jacinto, NXP S32G). Choose only if redesigning interface layer and accepting ~60% lower sustained read bandwidth and higher pin count.

Compared with S26KS512SDPBHM020, the Cypress-branded variant offers drop-in compatibility, while the Macronix part requires interface redesign and sacrifices DDR timing precision, making it unsuitable for automotive or real-time boot-critical systems.

Availability

S26KS512SDPBHM020 is available at Aetrix Electronics and suitable for automotive ADAS controllers, industrial PLCs, telecom baseband units, and medical imaging systems requiring stable component supply across extended product lifecycles.

Supply support for S26KS512SDPBHM020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global R&D and manufacturing facilities.

This device belongs to Infineon's HYPERFLASH™ family, designed specifically for high-bandwidth, low-pin-count boot memory in automotive and industrial SoC platforms requiring deterministic DDR timing and AEC-Q100 compliance.

FAQ

What is the minimum supported clock frequency for S26KS512SDPBHM020?

The device supports variable clock rates down to DC (0 Hz) in active clock stop mode, but operational read/write functions require a minimum 1 MHz clock for command execution. The datasheet specifies timing parameters starting at 10 MHz for reliable setup/hold margins, and typical use begins at 25 MHz for initialization sequences before scaling to 166 MHz.

Does S26KS512SDPBHM020 support octal SPI or QPI interfaces?

No. S26KS512SDPBHM020 exclusively implements the HYPERBUS™ DDR interface with mandatory CK/CK#, RWDS, and 8-bit DQ signals. It does not support SPI, QSPI, octal SPI, or any serial peripheral interface protocol-only HYPERBUS™-compliant masters (e.g., TI AM65x, NXP S32G2, Renesas R-Car H3) can drive it directly.

How is the 512-byte program buffer utilized during write operations?

The buffer operates as a write cache: host writes up to 512 consecutive bytes to the buffer address space, then issues a single "buffer program" command. The device internally clocks all 512 bytes into the array in ~475 µs, achieving ~1 MBps effective throughput-eliminating per-word overhead and reducing host CPU load during firmware updates.

Can RSTO# be disabled or repurposed as a general-purpose output?

No. RSTO# is a dedicated open-drain output with fixed functionality: it asserts LOW after power-on reset completion for a user-configurable duration (1–128 ms via internal register), then releases. It cannot be disabled, inverted, or reassigned-it serves solely as a system-level reset coordination signal per automotive power sequencing standards.

S26KS512SDPBHM020 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HYPERFLASH™ KS
Package/Case:
24-VBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NOR
Memory Size:
512Mbit
Memory Organization:
64M x 8
Memory Interface:
HyperBus
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
-
Access Time:
96 ns
Voltage - Supply:
1.7V ~ 1.95V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
24-FBGA (6x8)

S26KS512SDPBHM020 FAQ

1.How can I place an order for S26KS512SDPBHM020 through Aetrix?

Please submit a Request for Quotation (RFQ) for S26KS512SDPBHM020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S26KS512SDPBHM020 reliable?

The price and inventory of S26KS512SDPBHM020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KS512SDPBHM020 is usually 5 days.

3.What payment methods are accepted for S26KS512SDPBHM020?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KS512SDPBHM020 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S26KS512SDPBHM020?

S26KS512SDPBHM020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S26KS512SDPBHM020 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S26KS512SDPBHM020?

For technical support, including S26KS512SDPBHM020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KS512SDPBHM020 requirements.

6.How does Aetrix verify that S26KS512SDPBHM020 is sourced from the original manufacturer or authorized distributors?

All S26KS512SDPBHM020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KS512SDPBHM020 meets industry standards.

7.What is the process for return or replacement of S26KS512SDPBHM020?

All S26KS512SDPBHM020 units undergo pre-shipment inspection (PSI). If there is an issue with S26KS512SDPBHM020, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S26KS512SDPBHM020 part is unused and in its original packaging.

Return procedure for S26KS512SDPBHM020:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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