Infineon Technologies S26KS512SDPBHM023

Overview

S26KS512SDPBHM023 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, 100,000 program/erase cycles, and operates from –40°C to +105°C (Industrial Plus grade). Used in high-performance boot code storage for automotive ADAS controllers.

For engineers reviewing the S26KS512SDPBHM023 datasheet, S26KS512SDPBHM023 pinout, S26KS512SDPBHM023 application, or S26KS512SDPBHM023 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), RWDS-synchronized DDR read alignment, ECC 1-bit correction/2-bit detection, and FBGA-24 package compatibility with board-level signal integrity constraints.

Technical Context

This device implements a DDR center-aligned read strobe (DCARS) architecture where command/address and data are transferred over the same 8-bit DQ bus using double-data-rate signaling referenced to CK/CK#. RWDS output is edge-aligned to CK transitions during reads, enabling precise data capture by the host controller.

The embedded algorithm controller (EAC) manages all non-volatile operations-including 512-byte buffer programming and 256-KB sector erase-without host intervention. Sector protection supports both volatile (lock bits) and non-volatile (OTP configuration) methods, and the 1024-byte one-time-programmable array stores critical calibration or security keys.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with CY15B104QN-SXIT and S26KL512SDPBHM020, S26KS512SDPBHM023 uniquely balances 333 MBps DDR throughput, automotive-grade reliability, and differential clock noise immunity-making it optimal for next-generation ADAS and 5G infrastructure where boot latency and signal integrity are co-constrained.

Availability

S26KS512SDPBHM023 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, medical imaging boot systems, and 5G baseband radio units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S26KS512SDPBHM023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing facilities.

This part belongs to the HYPERFLASH™ family-designed specifically for high-bandwidth, low-pin-count boot memory in safety-critical automotive and industrial systems requiring deterministic timing and AEC-Q100 qualification.

FAQ

What is the purpose of the RWDS signal in S26KS512SDPBHM023?

RWDS (Read Data Strobe) is an output signal synchronized to CK/CK# transitions during read operations. It indicates valid data windows on DQ[7:0], allowing the host controller to accurately sample DDR data without relying solely on clock edge timing. RWDS is not used during write operations and is essential for achieving reliable 333 MBps read throughput under signal integrity constraints.

Does S26KS512SDPBHM023 support linear burst mode, and how does it improve performance?

Yes, it supports configurable linear burst mode. In this mode, while bursting out one 32-byte page, the device simultaneously fetches the next sequential page from the MIRRORBIT™ array. This pipelining eliminates inter-page latency, enabling sustained 333 MBps throughput-critical for streaming boot code into CPU instruction caches without stalls.

How is ECC implemented, and what error conditions does it handle?

ECC is implemented in hardware with dedicated circuitry that computes and checks Hamming codes on every read. It corrects any single-bit error within a 512-bit word and detects any double-bit error. No software driver or CPU cycle overhead is required-the correction occurs transparently during data output, preserving deterministic timing for safety-critical applications.

What are the wake-up requirements from Deep Power-Down mode?

Deep Power-Down mode draws only 8 µA (typical) at +85°C and requires a 300 µs wake-up time before the device accepts commands. During wake-up, CS# must remain asserted (LOW), and CK must be stable. No initialization sequence is needed-after 300 µs, the device responds to standard commands, making it suitable for ultra-low-power always-on subsystems.