Infineon Technologies S26KS512SDPBHV020

Overview

S26KS512SDPBHV020 from Infineon Technologies is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial-plus temperature range (–40°C to +105°C). It is used in automotive ADAS domain controllers for fast boot code execution.

For engineers reviewing the S26KS512SDPBHV020 datasheet, S26KS512SDPBHV020 pinout, S26KS512SDPBHV020 application, or S26KS512SDPBHV020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns tACC), RWDS-synchronized DDR read alignment, sector protection granularity, deep power-down current (8 µA), and AEC-Q100 Grade 2 qualification for automotive embedded systems.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfer, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ technology for high-density NOR storage with word-wide (16-bit) addressing and page-aligned 32-byte random reads.

HYPERBUS™ protocol enables burst-oriented operations with configurable wrapped (16/32/64-byte) or linear bursts, and supports DCARS (DDR Center-Aligned Read Strobe) timing where read data edges align with RWDS transitions-not CK edges. Command/address and data share the same 8-bit DQ bus in DDR mode, reducing pin count versus legacy parallel NOR.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KS512SDPBHV020, the Cypress rebrand offers zero technical trade-off but limited long-term supply visibility, while the Macronix QSPI alternative sacrifices >8× read bandwidth, safety qualification, and ECC-making it unsuitable for automotive or industrial real-time boot applications.

Availability

S26KS512SDPBHV020 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, medical imaging boot ROMs, and avionics display processors requiring stable component supply across extended product lifecycles.

Supply support for S26KS512SDPBHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to Infineon's HYPERFLASH™ family-designed specifically for high-speed, low-pin-count boot memory in automotive and industrial systems requiring deterministic timing, ECC protection, and AEC-Q100 qualification.

FAQ

What is the minimum supported clock frequency for S26KS512SDPBHV020?

The device supports variable clock rates down to DC (0 Hz) in active modes, with no specified minimum frequency. Its HYPERBUS™ interface operates reliably across the full range from idle (clock stopped) to 166 MHz, and clock-stop during read consumes only 12 mA with no wake-up delay-enabling dynamic frequency scaling in power-aware systems.

Does S26KS512SDPBHV020 require external termination resistors for CK/CK#?

Yes. Per Infineon's layout guidelines (Datasheet Rev. *Q, Section 15.1), 50 Ω series termination is required on both CK and CK# lines near the device package, and a 100 Ω differential termination resistor must be placed close to the memory device between CK and CK# to ensure signal integrity at 166 MHz DDR operation.

How is the 512-byte program buffer utilized in practice?

The buffer accepts up to 512 bytes of write data in a single burst, then internally programs all data in ~475 µs. This enables 1 MBps effective write speed-ideal for firmware patching or configuration updates. Host must issue a "Buffer Write" command followed by "Program Buffer to Array" command; no intermediate polling is needed during internal programming.

Can S26KS512SDPBHV020 operate in 3.0 V I/O mode?

No. The "S" suffix in S26KS512S denotes 1.8 V I/O operation only. This part has fixed 1.8 V VCCQ and requires differential CK/CK#; it is not compatible with 3.0 V VCCQ systems. The 3.0 V variant is the S26KL512S (single-ended clock, 100 MHz max), which uses different pinout and timing.