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Infineon Technologies S27KL0641DABHA020
- Part No.:
- S27KL0641DABHA020
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 24-VBGA
- Datasheet:
-
S27KL0641DABHA020.pdf
- Description:
- IC PSRAM 64MBIT PAR 24FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,012
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Product details
Overview
S27KL0641DABHA020 from Infineon Technologies (formerly Cypress) is a 64 Mb (8 MB) HyperRAM™ self-refresh DRAM with HyperBus interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and bidirectional RWDS strobe/mask. It delivers 333 MBps throughput at 166 MHz DDR, features configurable burst lengths (16–128 bytes), and embeds autonomous refresh logic to emulate PSRAM behavior in microcontroller-based systems requiring high-bandwidth, low-pin-count external memory.
For engineers reviewing the S27KL0641DABHA020 datasheet, S27KL0641DABHA020 pinout, S27KL0641DABHA020 application, or S27KL0641DABHA020 equivalent, key selection considerations include its 24-ball FBGA package, DCARS timing compliance, deep power-down current (20 µA @ 1.8 V), RWDS-driven latency signaling, and compatibility with HyperBus-enabled SoCs such as Renesas RZ/A2M, NXP i.MX RT1170, and Infineon Traveo II.
Technical Context
This device implements a DDR HyperBus interface with center-aligned command/address transfers and edge-aligned read data strobed by RWDS. Its internal architecture integrates self-refresh control logic that eliminates host-managed refresh cycles while maintaining DRAM density advantages.
The HyperRAM operates in two voltage modes: 1.8 V I/O (supporting differential CK/CK# and 166 MHz max clock) and 3.0 V I/O (single-ended CK, 100 MHz max). RWDS serves dual roles - indicating initial latency during CA phase and acting as source-synchronous read strobe or write mask during data phases.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 64 Mb (8 MB) - provides sufficient off-chip RAM for GUI frame buffers or real-time firmware overlays in resource-constrained MCUs. |
| Interface Type | HyperBus DDR - uses only 12 signals (CS#, CK, CK#, DQ[7:0], RWDS, VCC, VCCQ, VSS, VSSQ) enabling compact PCB routing vs. parallel NOR/NAND. |
| Max Throughput | 333 MBps at 166 MHz DDR - supports high-speed streaming of image/video data without DMA bottlenecks in embedded vision applications. |
| Burst Config | Configurable wrapped/linear bursts (16–128 bytes) - enables cache-line-aligned reads for CPU instruction fetch and sequential writes for logging. |
| Deep Power Down | 20 µA @ 1.8 V - allows ultra-low standby power in battery-powered HMI or IoT edge nodes during display sleep modes. |
| Access Latency | 36 ns tACC @ 166 MHz - defines minimum time from CS# assertion to first valid read word, critical for deterministic real-time response. |
| Package | 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) - surface-mount compatible with automated assembly and thermal performance suitable for industrial temperature range. |
Pinout & Package
24-ball FBGA package with 0.8 mm pitch, 5 mm × 5 mm body size, and standard JEDEC MO-270AC footprint. Pin assignments conform to HyperBus specification v2.0 and support both single-ended (3.0 V) and differential (1.8 V) clock operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Core Supply | 1.8 V or 3.0 V nominal supply for memory array and control logic; decoupling required per datasheet layout guidelines. |
| VCCQ | I/O Supply | Independent 1.8 V or 3.0 V supply for DQ/RWDS/CK buffers; enables mixed-voltage system interfacing. |
| VSS, VSSQ | GND Planes | Separate analog/digital ground returns minimize noise coupling between core and I/O domains. |
| CS# | Chip Select | Active-low enable for all transactions; deassertion terminates ongoing burst and initiates auto-refresh if needed. |
| CK / CK# | Differential Clock | At 1.8 V mode: LVDS-compatible pair defining DDR edge sampling instants; CK# must be inverted and matched in length to CK. |
| RWDS | Bidirectional Strobe/Mask | Output during CA phase indicates refresh latency; input during write masks DQ byte; output during read aligns with data edges. |
| DQ[7:0] | Data Bus | 8-bit bidirectional DDR data path; each transition carries one nibble per edge (DDR), enabling 16-bit word transfers per full clock cycle. |
| RESET# | Hardware Reset | Asynchronous active-low signal forcing device into known state; required before HyperBus initialization sequence. |
Key Features
| Feature | Design Value |
|---|---|
| Self-Refresh DRAM Core | Eliminates host refresh overhead and timing constraints, presenting as PSRAM to software while retaining DRAM cost/density benefits. |
| DCARS Timing Compliance | RWDS phase-shifted relative to CK during reads ensures strobe edge falls within data eye center, relaxing PCB trace skew requirements. |
| Configurable Output Drive Strength | Adjustable DQ/RWDS drive levels reduce EMI and improve signal integrity on long traces or multi-drop buses. |
| Hybrid Burst Mode | Enables one wrapped burst (e.g., cache line fill) followed by linear burst (e.g., bulk transfer) in same transaction stream for optimized memory access patterns. |
| Low-Power Deep Power Down | 20 µA shutdown current at 1.8 V allows rapid wake-up (< 100 µs) from sleep states without losing memory contents. |
Applications
| Industrial HMI Display Buffer | Automotive Cluster Graphics Memory |
|---|---|
|
Use Scenario: Storing rendered UI frames and font glyphs for TFT-LCD displays in PLC operator panels. IC Role / Device Role / Timing Role: External PSRAM replacement providing 8 MB of low-latency, burst-accessible memory mapped directly to MCU AXI bus via HyperBus controller. Use Value: Reduces BOM count by eliminating separate SRAM + NAND combo; 333 MBps bandwidth sustains 1080p@60fps partial updates without frame tearing. |
Use Scenario: Holding instrument cluster graphics assets and animation buffers in AEC-Q100 qualified automotive dashboards. IC Role / Device Role / Timing Role: High-reliability external memory interfaced to ASIL-B capable SoC with ECC-disabled but refresh-managed operation. Use Value: 20 µA deep power-down extends battery drain survival during vehicle sleep mode; FBGA package meets vibration/shock requirements per ISO 16750. |
| Edge AI Inference Scratchpad | Smart Camera Frame Buffer |
|
Use Scenario: Serving as temporary tensor scratchpad for lightweight CNN inference on Cortex-M7 based vision modules. IC Role / Device Role / Timing Role: Low-pin-count DDR memory accessed via DMA with predictable 36 ns tACC for weight matrix streaming. Use Value: Configurable 128-byte wrapped bursts match typical convolution kernel tile sizes, minimizing bus turnaround overhead. |
Use Scenario: Buffering full-resolution image frames from MIPI CSI-2 sensor before JPEG compression in surveillance cameras. IC Role / Device Role / Timing Role: High-throughput external memory synchronized to sensor pixel clock via HyperBus master timing engine. Use Value: Linear burst mode enables continuous 1280×720@30fps write capture at 200+ MBps sustained rate without FIFO overflow. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar HyperBus-compatible DRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S27KL0641DABHI020 | Same die, industrial temperature grade (−40°C to +85°C) vs. commercial (0°C to +70°C); identical electrical specs and pinout. | Required for extended-temperature deployments in factory automation or outdoor kiosks. | Select when ambient operating temperature exceeds 70°C or requires AEC-Q200 stress testing compliance. |
| S70KL1281DABHA020 | 128 Mb (16 MB) density in same 24-ball FBGA; dual-die stack; otherwise identical HyperBus interface and timing. | Used where larger frame buffers or dual-display support demand >8 MB memory capacity. | Choose when application memory footprint exceeds 8 MB and board layout cannot accommodate second memory device. |
Compared with S27KL0641DABHA020, the S27KL0641DABHI020 offers extended thermal reliability without interface changes, while the S70KL1281DABHA020 doubles capacity in identical footprint-enabling scalable memory design without re-spinning HyperBus routing.
Availability
S27KL0641DABHA020 is available at Aetrix Electronics and suitable for industrial HMI, automotive cluster displays, edge AI inference accelerators, and smart camera frame buffering requiring stable component supply and long-term lifecycle assurance.
Supply support for S27KL0641DABHA020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and IoT markets.
This part belongs to Infineon's HyperRAM product line, designed specifically to replace legacy PSRAM and low-density LPDDR in MCU-based systems where pin count, power efficiency, and ease of integration outweigh raw bandwidth demands.
FAQ
Is S27KL0641DABHA020 pin-compatible with other HyperRAM devices?
Yes, it shares identical 24-ball FBGA pinout and HyperBus interface definition with all S27KL/S27KS and S70KL/S70KS series devices. This enables drop-in replacement across densities (64 Mb/128 Mb) and voltage grades (1.8 V/3.0 V), provided the host controller supports the target configuration and timing parameters.
Does this device require external refresh management from the host processor?
No. The S27KL0641DABHA020 contains fully autonomous self-refresh circuitry that executes internal refresh operations without host intervention. The host only needs to observe initial latency indications via RWDS and avoid excessively long burst sequences that block refresh windows.
What is the significance of RWDS being bidirectional in HyperBus transactions?
RWDS acts as an output during command/address phase to signal required initial latency, as a read data strobe (edge-aligned) during read bursts, and as a write mask (HIGH = masked, LOW = valid) during write bursts. This multiplexing reduces pin count while preserving precise timing control for both directions.
Can S27KL0641DABHA020 operate with a single-ended clock instead of differential?
Yes, but only in 3.0 V I/O mode, which uses single-ended CK. The 1.8 V mode mandates differential CK/CK# for signal integrity at 166 MHz. Mixing voltage modes is not allowed - VCC and VCCQ must be set to the same nominal value (either 1.8 V or 3.0 V) per datasheet specifications.
S27KL0641DABHA020 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HYPERRAM™ KL
- Package/Case:
- 24-VBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- PSRAM
- Technology:
- PSRAM (Pseudo SRAM)
- Memory Size:
- 64Mbit
- Memory Organization:
- 8M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 40 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-FBGA (6x8)
S27KL0641DABHA020 FAQ
1.How can I place an order for S27KL0641DABHA020 through Aetrix?
Please submit a Request for Quotation (RFQ) for S27KL0641DABHA020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S27KL0641DABHA020 reliable?
The price and inventory of S27KL0641DABHA020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S27KL0641DABHA020 is usually 5 days.
3.What payment methods are accepted for S27KL0641DABHA020?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S27KL0641DABHA020 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S27KL0641DABHA020?
S27KL0641DABHA020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S27KL0641DABHA020 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S27KL0641DABHA020?
For technical support, including S27KL0641DABHA020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S27KL0641DABHA020 requirements.
6.How does Aetrix verify that S27KL0641DABHA020 is sourced from the original manufacturer or authorized distributors?
All S27KL0641DABHA020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S27KL0641DABHA020 meets industry standards.
7.What is the process for return or replacement of S27KL0641DABHA020?
All S27KL0641DABHA020 units undergo pre-shipment inspection (PSI). If there is an issue with S27KL0641DABHA020, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S27KL0641DABHA020 part is unused and in its original packaging.
Return procedure for S27KL0641DABHA020:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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