Infineon Technologies S27KL0641DABHA023

Overview

S27KL0641DABHA023 from Infineon Technologies (formerly Cypress) is a 64 Mb (8 MB) HyperRAM™ self-refresh DRAM with HyperBus interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and bidirectional RWDS strobe/mask. It delivers 333 MBps throughput at 166 MHz DDR, features DCARS timing, configurable burst lengths (16–128 bytes), and deep power-down mode consuming only 20 µA at 1.8 V. Used in embedded graphics buffers and real-time display controllers where low pin count and high bandwidth are critical.

For engineers reviewing the S27KL0641DABHA023 datasheet, S27KL0641DABHA023 pinout, S27KL0641DABHA023 application, or S27KL0641DABHA023 equivalent, key selection criteria include HyperBus interface compatibility, 1.8 V I/O voltage tolerance, DCARS-enabled read strobe alignment, burst configuration flexibility, and deep power-down current specification under 105 °C operation.

Technical Context

This device implements a pseudo-static RAM architecture using internally managed self-refresh DRAM cells, eliminating host-side refresh management while maintaining SRAM-like ease of use. Its HyperBus interface uses center-aligned command/address transfers and edge-aligned DDR data transfers synchronized to CK/CK#.

The RWDS signal serves dual roles: as a latency-indicating output during CA phase and as a source-synchronous read strobe or write mask during data phases. DCARS functionality shifts RWDS phase relative to CK to center it within the read data eye, enabling reliable high-speed sampling at 166 MHz.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperBus-compatible memory applications.

Compared with S27KL0641DABHA023, the DABHI020 offers identical performance at lower temperature grade and cost, while the S70KL1281DABHA020 doubles capacity at the expense of higher current and thermal footprint-making the original part optimal for thermally constrained 8 MB applications requiring full industrial temperature range.

Availability

S27KL0641DABHA023 is available at Aetrix Electronics and suitable for industrial HMI display buffers, automotive digital cluster memory, and medical imaging preview buffers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S27KL0641DABHA023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions derived from its acquisition of Cypress Semiconductor.

This part belongs to Infineon's HyperRAM™ product line, designed specifically to replace parallel NOR/NAND and legacy PSRAM in bandwidth-constrained embedded systems needing DRAM density with SRAM simplicity.

FAQ

Is S27KL0641DABHA023 pin-compatible with other HyperRAM devices in the S27KL/S27KS family?

Yes, all S27KL0641 variants share identical 24-ball FBGA pinout and HyperBus interface signaling. Differences are limited to temperature grade, voltage option (1.8 V only in this variant), and internal configuration fuses-no PCB redesign is needed when migrating between DABHA023, DABHI020, or DAHAI020 packages.

Does S27KL0641DABHA023 require external refresh circuitry or host-managed refresh cycles?

No. The device integrates autonomous self-refresh logic that maintains DRAM cell charge without host intervention. The HyperBus interface presents it as a pseudo-static RAM-only standard read/write commands are required, and refresh operations occur transparently during idle periods or controlled latency windows.

What is the functional impact of the RWDS signal's dual role in read versus write transactions?

In reads, RWDS acts as a source-synchronous strobe edge-aligned with DQ transitions, enabling precise data capture. In writes, it functions as a byte mask: HIGH disables the corresponding DQ byte from being written, allowing partial-word updates without read-modify-write cycles-critical for efficient GUI text rendering and overlay composition.

Can S27KL0641DABHA023 operate with single-ended clock instead of differential CK/CK#?

No. This variant (DABHA023) is specified exclusively for 1.8 V operation with differential clock inputs. Single-ended clock support is only available in 3.0 V variants (e.g., S27KS0641), which use CK-only and have different timing parameters and maximum frequency (100 MHz).