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Nexperia USA Inc. S27KL0641DABHB020
- Part No.:
- S27KL0641DABHB020
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Memory
- Package:
- -
- Datasheet:
-
S27KL0641DABHB020.pdf
- Description:
- S27KL064 - Parallel NOR HyperFla
- Quantity:
- Payment:
- Shipping:
Inventory:4,968
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Product details
Overview
S27KL0641DABHB020 from Infineon Technologies (formerly Cypress) is a 64 Mb (8 MB) HyperRAM™ self-refresh DRAM with HyperBus interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and bidirectional RWDS strobe/mask. It delivers 333 MBps throughput at 166 MHz DDR, features DCARS timing, and integrates on-die refresh logic to emulate PSRAM behavior in embedded systems requiring high-bandwidth, low-pin-count memory expansion.
For engineers reviewing the S27KL0641DABHB020 datasheet, S27KL0641DABHB020 pinout, S27KL0641DABHB020 application, or S27KL0641DABHB020 equivalent, key selection criteria include HyperBus timing compliance (tACC = 36 ns @ 166 MHz), deep power-down current (20 µA @ 1.8 V), configurable burst length (16–128 bytes), RWDS phase-shifted read strobe alignment, and FBGA-24 package compatibility with 5 mm × 5 mm footprint.
Technical Context
This device implements a DDR HyperBus interface with center-aligned command/address transfers and edge-aligned read data strobed by RWDS. Its internal refresh controller eliminates host-managed refresh cycles, enabling seamless integration as pseudo-static RAM while maintaining DRAM density advantages.
The HyperRAM architecture supports dynamic burst-type selection per transaction (wrapped, linear, or hybrid), configurable output drive strength, and dual-voltage operation (VCC/VCCQ = 1.8 V or 3.0 V). DCARS functionality shifts RWDS phase relative to CK to center read data transitions within the data eye at high speed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 64 Mb (8 MB) - provides sufficient buffer space for graphics frame buffers or firmware overlays in resource-constrained SoC designs |
| Interface Type | HyperBus DDR - uses only 12 signals (CK/CK#, CS#, RWDS, DQ[7:0]) for high-speed memory access with minimal PCB routing complexity |
| Max Data Rate | 333 MBps @ 166 MHz (1.8 V) - enables real-time streaming of HD video or sensor fusion data without external memory bottlenecks |
| Access Latency | tACC = 36 ns @ 166 MHz - defines minimum time from CK edge to valid first read word, critical for deterministic system timing |
| Power Modes | Deep Power Down = 20 µA @ 1.8 V - allows ultra-low standby consumption during display sleep or sensor idle states |
| Burst Length | Configurable: 16/32/64/128 bytes - supports cache-line fill (wrapped) and sequential DMA transfers (linear) in same system |
| Package | 24-ball FBGA, 5 mm × 5 mm, 0.8 mm pitch - compatible with standard SMT assembly and suitable for compact industrial HMI modules |
Pinout & Package
Package: 24-ball Fine-Pitch Ball Grid Array (FBGA), 5 mm × 5 mm body, 0.8 mm ball pitch, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Core Supply | 1.8 V nominal supply for memory array and control logic; decoupling required per datasheet layout guidelines |
| VCCQ | I/O Supply | 1.8 V nominal supply for DQ/RWDS/CK/CK#/CS# buffers; independent from VCC to support mixed-voltage systems |
| VSS | Digital Ground | Primary ground reference for core logic; must be connected to system GND plane with low-inductance path |
| VSSQ | I/O Ground | Separate ground for I/O drivers; isolated from VSS to minimize switching noise coupling into memory array |
| CK / CK# | Differential Clock Input | LV-CMOS differential pair accepting 166 MHz max; used for all command, address, and data capture timing |
| CS# | Chip Select | Active-low enable signal; deassertion terminates all transactions and initiates power-down entry sequence |
| RWDS | Bidirectional Strobe/Mask | Output during CA transfer (indicates latency); input during write (mask), output during read (strobe) |
| DQ[7:0] | Data Bus | 8-bit bidirectional LV-CMOS data path; transfers two bytes per clock cycle in DDR mode |
| RESET# | Hardware Reset | Asynchronous active-low reset; forces device into known state and clears internal registers |
Key Features
| Feature | Design Value |
|---|---|
| Self-Refresh DRAM Core | On-die refresh controller eliminates host CPU overhead and timing-critical refresh scheduling |
| DDR HyperBus Interface | 12-signal interface achieves 333 MBps with minimal PCB layer count and routing congestion |
| DCARS Timing Architecture | RWDS phase shift aligns strobe edges to center of read data eye, improving timing margin at 166 MHz |
| Configurable Burst Mode | Per-transaction selection of wrapped (cache line), linear (DMA), or hybrid bursts optimizes bandwidth utilization |
| Low-Power Deep Power Down | 20 µA standby current at 1.8 V enables battery-backed operation in always-on edge nodes |
Applications
| Industrial HMI Display Buffer | Automotive Instrument Cluster Memory |
|---|---|
|
Use Scenario: High-resolution TFT LCD rendering with dynamic UI updates and animation layers. IC Role / Device Role / Timing Role: External frame buffer memory interfaced to MCU or GPU via HyperBus, providing low-latency pixel data access. Use Value: 333 MBps bandwidth sustains 1080p@60Hz RGB888 transfers without bus contention; DCARS ensures reliable read timing across temperature. |
Use Scenario: Real-time gauge rendering and warning overlay compositing in digital instrument clusters. IC Role / Device Role / Timing Role: Pseudo-static RAM replacement for legacy SRAM-based cluster designs, reducing BOM cost and board area. Use Value: Self-refresh eliminates MCU refresh interrupts; 20 µA deep power-down meets automotive cold-cranking current budgets. |
| Edge AI Inference Accelerator Buffer | Smart Camera Image Preprocessing Buffer |
|
Use Scenario: Temporary storage for intermediate tensor outputs during multi-layer neural network inference. IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory co-located with NPU, accessed via burst reads/writes over HyperBus. Use Value: Configurable 128-byte linear bursts match typical convolution kernel tile sizes; low tACC enables pipelined compute-memory flow. |
Use Scenario: Frame buffering for ISP pipelines performing HDR merging, noise reduction, and lens correction. IC Role / Device Role / Timing Role: Dual-port-like access pattern using wrapped bursts for line-buffer reuse and linear bursts for full-frame writes. Use Value: RWDS-as-mask enables byte-level write precision during partial frame updates; FBGA-24 simplifies HD camera module layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed, low-pin-count memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S27KL0641DABHI020 | Same die, industrial temperature grade (–40°C to +85°C) vs. this part's commercial grade (0°C to +70°C) | Required for extended-temperature industrial or automotive cabin applications | Select when operating ambient exceeds 70°C or requires AEC-Q200 stress testing |
| S70KL1281DABHI020 | 128 Mb (16 MB) dual-die stack, identical HyperBus interface and timing, higher density | Needed for larger frame buffers or multi-context AI workloads where 8 MB is insufficient | Choose when memory capacity demand exceeds 8 MB and PCB footprint allows same FBGA-24 package |
Compared with S27KL0641DABHB020, the S27KL0641DABHI020 extends thermal range without changing timing or power, while the S70KL1281DABHI020 doubles capacity with identical interface behavior-both maintain pin, package, and protocol compatibility for drop-in scalability.
Availability
S27KL0641DABHB020 is available at Aetrix Electronics and suitable for industrial HMI displays, automotive instrument clusters, and edge AI accelerators requiring stable component supply, long-term lifecycle support, and verified HyperBus interoperability.
Supply support for S27KL0641DABHB020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.
This device belongs to Infineon's HyperRAM product line, designed specifically to replace parallel SRAM and legacy PSRAM in bandwidth-constrained, pin-limited embedded systems while delivering DRAM density and cost efficiency.
FAQ
Is S27KL0641DABHB020 pin-compatible with other HyperRAM devices in the S27KL/S27KS family?
Yes, all S27KL0641 variants-including DABHB020, DABHI020, and DABHJ020-share identical 24-ball FBGA pinout, electrical interface, and HyperBus protocol. Differences are limited to temperature grade, packaging, and marking; no PCB redesign is needed when upgrading to industrial or automotive grades.
Does this device require external refresh circuitry or host software intervention for memory maintenance?
No. The S27KL0641DABHB020 contains fully autonomous on-die refresh logic that executes background refresh cycles without host involvement. The HyperBus interface presents it as a pseudo-static RAM, eliminating refresh commands, timing constraints, or CPU overhead typically associated with standard DRAM.
What is the role of RWDS during write transactions, and how does it differ from its function in read mode?
During writes, RWDS acts as a per-byte write mask: HIGH disables writing to the corresponding DQ byte, LOW enables it. During reads, RWDS serves as a source-synchronous strobe aligned to read data edges. This dual function enables precise byte masking for non-word-aligned writes and robust data capture timing in high-speed reads.
Can S27KL0641DABHB020 operate with a single-ended clock instead of differential CK/CK#?
No. The S27KL0641DABHB020 is specified only for differential clock operation (CK/CK#) per its datasheet and HyperBus specification. Single-ended clocking is supported only on the 3.0 V I/O variants (e.g., S27KS0641 series), which use CK only and have different pinout and timing parameters.
S27KL0641DABHB020 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
S27KL0641DABHB020 FAQ
1.How can I place an order for S27KL0641DABHB020 through Aetrix?
Please submit a Request for Quotation (RFQ) for S27KL0641DABHB020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S27KL0641DABHB020 reliable?
The price and inventory of S27KL0641DABHB020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S27KL0641DABHB020 is usually 5 days.
3.What payment methods are accepted for S27KL0641DABHB020?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S27KL0641DABHB020 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S27KL0641DABHB020?
S27KL0641DABHB020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S27KL0641DABHB020 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S27KL0641DABHB020?
For technical support, including S27KL0641DABHB020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S27KL0641DABHB020 requirements.
6.How does Aetrix verify that S27KL0641DABHB020 is sourced from the original manufacturer or authorized distributors?
All S27KL0641DABHB020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S27KL0641DABHB020 meets industry standards.
7.What is the process for return or replacement of S27KL0641DABHB020?
All S27KL0641DABHB020 units undergo pre-shipment inspection (PSI). If there is an issue with S27KL0641DABHB020, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S27KL0641DABHB020 part is unused and in its original packaging.
Return procedure for S27KL0641DABHB020:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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