Infineon Technologies S27KL0641DABHB023

Overview

S27KL0641DABHB023 from Infineon Technologies (formerly Cypress) is a 64 Mb (8 MB) HyperRAM™ self-refresh DRAM with HyperBus interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and bidirectional RWDS strobe/mask. It delivers 333 MBps throughput at 166 MHz DDR, features DCARS timing for read data eye alignment, and integrates on-die refresh control to emulate PSRAM behavior in embedded systems requiring low-pin-count high-bandwidth memory.

For engineers reviewing the S27KL0641DABHB023 datasheet, S27KL0641DABHB023 pinout, S27KL0641DABHB023 application, or S27KL0641DABHB023 equivalent, key selection criteria include HyperBus signal count (12 pins), DCARS-enabled read strobe timing, configurable burst length (16–128 bytes), deep power-down current (20 µA @ 1.8 V), and FBGA-24 package compatibility with space-constrained SoC interfaces.

Technical Context

This device implements a DDR HyperBus interface with center-aligned command/address transfers and edge-aligned read data using RWDS as a source-synchronous strobe. Its internal refresh controller eliminates host-managed refresh cycles, enabling seamless integration with microcontrollers lacking DRAM controllers.

The HyperRAM architecture supports dynamic burst type selection per transaction-wrapped (for cache-line fills) or linear (for graphics/data streaming)-and includes programmable output drive strength and initial latency negotiation via RWDS during CA phase. DCARS functionality shifts RWDS phase relative to CK to center transitions within the read data eye at high speed.

Key Specifications

Pinout & Package

Package: 24-ball Fine-Pitch Ball Grid Array (FBGA), 5 mm × 5 mm body, 0.8 mm ball pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperBus-compatible memory applications.

Compared with S27KS0641DABHI020, this part trades extended temperature support for lower cost in commercial environments; compared with S70KL1281DABHI020, it offers half the capacity at reduced power and cost-ideal for cost-sensitive, thermally benign embedded UIs.

Availability

S27KL0641DABHB023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, smart home gateway UIs, and medical portable monitors requiring stable component supply and long-term lifecycle assurance.

Supply support for S27KL0641DABHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for automotive, industrial, and IoT markets.

This device belongs to Infineon's HyperRAM™ product line, engineered to replace parallel SRAM and low-density SDRAM in MCU-based systems where pin count, power, and ease of integration are critical constraints.

FAQ

Is S27KL0641DABHB023 pin-compatible with other HyperRAM devices in the S27K/S70K family?

Yes, all S27KL/S27KS and S70KL/S70KS devices share identical 24-ball FBGA pinouts and HyperBus signal assignments. Mechanical and electrical compatibility is maintained across densities and voltage grades, enabling drop-in replacement for capacity or voltage scaling without PCB redesign.

Does this device require external refresh circuitry or host software intervention for memory maintenance?

No. The S27KL0641DABHB023 integrates autonomous self-refresh logic that executes internal refresh cycles without host involvement. The HyperBus interface presents it as a pseudo-static RAM, eliminating refresh registers, timers, or periodic interrupt servicing in the MCU firmware.

What is the role of RWDS during write transactions, and how does it differ from its function in read mode?

During writes, RWDS acts as a byte mask: HIGH disables writing to the corresponding DQ byte, LOW enables it. During reads, RWDS serves as an edge-aligned strobe synchronized to read data. In both cases, RWDS originates from the device during command/address phase to signal initial latency requirements.

Can DCARS timing be disabled or configured differently for legacy system compatibility?

No. DCARS is a fixed hardware feature of the HyperRAM architecture and cannot be disabled. However, the device supports standard HyperBus timing modes without DCARS in earlier revisions; this part implements DCARS as a mandatory enhancement for reliable 166 MHz operation and requires matching host controller support.