Infineon Technologies S27KL0641DABHI023

Overview

S27KL0641DABHI023 from Infineon Technologies (formerly Cypress) is a 64 Mb (8 MB) HyperRAM™ self-refresh DRAM with HyperBus interface, operating at 1.8 V or 3.0 V I/O supply. It delivers up to 333 MBps throughput via DDR interface with 166 MHz clock (1.8 V), features 8-bit DQ bus, bidirectional RWDS strobe/mask, and integrated refresh control - enabling PSRAM-like ease of use in embedded graphics and application processors.

For engineers reviewing the S27KL0641DABHI023 datasheet, S27KL0641DABHI023 pinout, S27KL0641DABHI023 application, or S27KL0641DABHI023 equivalent, key selection criteria include DCARS timing compliance, RWDS phase-shifted read strobe behavior, configurable burst length (16–128 bytes), deep power-down current (20 µA @ 1.8 V), and FBGA-24 package compatibility with HyperBus host controllers.

Technical Context

This device implements a low-signal-count DDR interface with only 11 signals (3.0 V mode) or 12 signals (1.8 V mode), including differential clock (CK/CK#), chip select (CS#), 8-bit data bus (DQ[7:0]), and bidirectional RWDS. Its internal refresh logic eliminates host-managed refresh cycles, presenting as pseudo-static RAM while retaining DRAM density and cost advantages.

The DDR Center-Aligned Read Strobe (DCARS) function uses a phase-shifted clock derived from CK to align RWDS transitions within the read data eye, ensuring reliable source-synchronous capture. Burst transactions support wrapped (cache-line fill) or linear (graphics buffer) modes, selected per transaction, with initial latency dynamically indicated by RWDS during command-address transfer.

Key Specifications

Pinout & Package

24-ball FBGA package (5 mm × 5 mm, 0.8 mm pitch) with exposed thermal pad not required; RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar self-refresh DRAM applications.

Compared with IS66WV51216EDALL-15BLI, S27KL0641DABHI023 reduces signal count by >60% and eliminates refresh firmware, while delivering 16× more density; versus S27KS0641DABHI020, it trades automotive qualification for lower cost in non-automotive industrial use cases.

Availability

S27KL0641DABHI023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, smart home gateway UIs, and medical patient monitor displays requiring stable component supply and long-term manufacturability.

Supply support for S27KL0641DABHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and IoT markets.

This part belongs to the HyperRAM™ product line, designed to bridge the gap between SRAM simplicity and DRAM density for embedded systems needing high-bandwidth, low-pin-count external memory.

FAQ

What is the difference between S27KL0641DABHI023 and S27KS0641DABHI020?

S27KL0641DABHI023 is rated for industrial temperature (–40°C to +85°C) and standard reliability screening, while S27KS0641DABHI020 meets AEC-Q100 Grade 2 automotive qualification (–40°C to +105°C) with extended HTOL and ESD testing. Both share identical pinout, timing, and electrical specs.

Does this device require external refresh circuitry?

No. S27KL0641DABHI023 integrates autonomous self-refresh logic that maintains data retention without host intervention. The HyperBus interface abstracts DRAM complexity, presenting behavior identical to PSRAM - no refresh commands or scheduling are needed from the host controller.

Can RWDS be used as a dedicated read strobe only?

No. RWDS is inherently bidirectional: it outputs initial latency and read strobe during reads, and inputs write mask during writes. Its dual function eliminates the need for a separate DQM signal, but requires host logic to switch direction per transaction phase - a requirement defined in the HyperBus specification.

Is DCARS timing mandatory for correct operation at 166 MHz?

Yes. At 166 MHz (1.8 V), DCARS - using a phase-shifted clock to align RWDS edges within the read data eye - is required to meet setup/hold timing. The device does not support non-DCARS read capture at maximum speed; omitting DCARS implementation risks data corruption in high-speed read bursts.