Infineon Technologies S27KL0641DABHV020

Overview

S27KL0641DABHV020 from Infineon Technologies (formerly Cypress) is a 64 Mb (8 MB) HyperRAM™ self-refresh DRAM with HyperBus interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and bidirectional RWDS strobe/mask. It delivers 333 MBps throughput at 166 MHz DDR, features DCARS timing for read data eye alignment, and supports wrapped/linear burst lengths up to 128 bytes. Used in embedded graphics buffers and real-time display controllers where low pin count and high bandwidth are critical.

For engineers reviewing the S27KL0641DABHV020 datasheet, S27KL0641DABHV020 pinout, S27KL0641DABHV020 application, or S27KL0641DABHV020 equivalent, key selection criteria include HyperBus interface compatibility, 1.8 V I/O voltage requirement, 24-ball FBGA package footprint, DCARS-enabled read strobe timing, and support for dynamic burst type selection per transaction.

Technical Context

This device implements a pseudo-static RAM architecture using internally managed self-refresh DRAM cells, eliminating host refresh overhead while maintaining DRAM density and cost advantages. Its HyperBus interface uses only 12 signals - including CK/CK#, CS#, RWDS, and DQ[7:0] - enabling high-speed DDR transfers without complex routing.

The DCARS (DDR Center-Aligned Read Strobe) function shifts RWDS phase relative to CK during reads to center strobe edges within the data eye, improving timing margin at 166 MHz. Burst configuration (wrapped/linear/hybrid) and output drive strength are register-programmable, allowing runtime adaptation to system signal integrity requirements.

Key Specifications

Pinout & Package

24-ball FBGA package with 5 × 5 array, 0.8 mm ball pitch, and standard JEDEC MO-279 footprint. Pin assignments conform to HyperBus v2.0 specification for 1.8 V operation with differential clock.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperBus-compatible PSRAM applications.

Compared with S27KL0641DABHV020, the S27KL0641DABHV010 trades automotive qualification for lower cost in industrial settings, while the S27KS0641DABHV020 replaces differential clocking with single-ended to simplify clock generation - both require validation of timing margins and thermal behavior in final system integration.

Availability

S27KL0641DABHV020 is available at Aetrix Electronics and suitable for automotive digital instrument clusters, industrial HMI display controllers, smart home hub UI subsystems, and medical patient monitor displays requiring stable component supply and long-term lifecycle support.

Supply support for S27KL0641DABHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong focus on reliability and industrial-grade performance.

This part belongs to Infineon's HyperRAM™ product line, designed specifically to replace parallel NOR/NAND and legacy PSRAM in bandwidth-constrained embedded systems needing simple, high-speed, low-pin-count memory expansion.

FAQ

Is S27KL0641DABHV020 pin-compatible with S27KS0641DABHV020?

No - although both share the same 24-ball FBGA package and DQ/RWDS/CS#/VCC/VCCQ/RESET# pin assignments, S27KL0641DABHV020 requires differential CK/CK# inputs, whereas S27KS0641DABHV020 uses single-ended CK only. The CK# ball on the KL variant is functional and must be driven; leaving it unconnected or tied off violates AC timing specifications and may cause transaction failures at 166 MHz.

What is the minimum initial latency required for read transactions at 166 MHz?

At 166 MHz with 1.8 V supply, the minimum initial latency is one clock cycle (1×), indicated by RWDS LOW during the command-address phase. However, if internal refresh is pending, RWDS goes HIGH to signal two-cycle (2×) latency. Host firmware must sample RWDS during CA transfer and insert the corresponding wait state before reading first data word - this is mandatory for timing compliance and data integrity.

Can S27KL0641DABHV020 operate with 3.0 V I/O voltage?

No - S27KL0641DABHV020 is specified exclusively for 1.8 V VCCQ (I/O supply). The "L" in the part number denotes 1.8 V I/O; 3.0 V variants use "S" suffix (e.g., S27KS0641). Applying 3.0 V to VCCQ exceeds absolute maximum ratings (2.05 V), risking immediate latch-up or latent reliability degradation. System design must ensure strict 1.8 V regulation on VCCQ.

Does this device support hardware reset recovery without power cycling?

Yes - asserting RESET# (active low, min pulse width 100 ns) forces a full internal initialization sequence identical to power-on reset, including register reload, DLL calibration, and memory array precharge. This allows safe recovery from bus lockup or configuration errors without removing VCC/VCCQ. After RESET# release, the device enters standby mode and is ready for new CS#-initiated transactions within 100 µs.