Infineon Technologies S27KL0642DPBHA020

Overview

S27KL0642DPBHA020 from Infineon Technologies is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz and delivering up to 400 MBps throughput. It features 8-bit DQ bus, bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), and industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S27KL0642DPBHA020 datasheet, S27KL0642DPBHA020 pinout, S27KL0642DPBHA020 application, or S27KL0642DPBHA020 equivalent, this device serves as a drop-in PSRAM replacement for microcontroller-based systems requiring low-pin-count, high-bandwidth memory with autonomous refresh and minimal host overhead.

Technical Context

The S27KL0642DPBHA020 implements a HYPERBUS™-compliant DDR interface with six-byte command/address framing over the 8-bit DQ bus, using single-ended or optional differential clock (CK/CK#). Its internal refresh controller eliminates host-managed refresh cycles, presenting static RAM semantics to the host while retaining DRAM density and cost advantages.

It supports hybrid sleep and deep power-down modes, with standby current as low as 330 µA at 2.0 V and 105°C, and integrates DCARS functionality for phase-shifted RWDS alignment during reads to maximize data eye margin at 200 MHz operation.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0642DPBHA020, the Cypress variant offers identical performance and compatibility, while the ISSI SRAM trades bandwidth and integration for simpler timing but demands more pins, board area, and host resource overhead.

Availability

S27KL0642DPBHA020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, edge AI sensor nodes, and medical portable monitors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S27KL0642DPBHA020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ product line, designed specifically to replace parallel NOR/PSRAM in MCU-based systems where pin count, power, and bandwidth must be optimized simultaneously.

FAQ

What voltage supplies does the S27KL0642DPBHA020 require?

The device operates with a single supply voltage applied to both VCC (core array) and VCCQ (I/O buffers), selectable as either 1.8 V ±0.15 V or 3.0 V ±0.3 V per datasheet Section 9.4.2. No separate I/O voltage rail is needed, simplifying power design and eliminating level-shifting components.

Does the S27KL0642DPBHA020 require external refresh control from the host MCU?

No. The device contains fully autonomous self-refresh circuitry that manages DRAM row refresh without host intervention. The host sees static RAM behavior - no refresh commands, timers, or interrupts are required, reducing firmware complexity and CPU load.

Can the S27KL0642DPBHA020 be used with microcontrollers lacking native HYPERBUS™ support?

Yes - it can be interfaced via GPIO bit-banging or FPGA soft logic implementing the HYPERBUS™ protocol, though performance will be limited. For full 200 MHz DDR operation, an MCU with dedicated HYPERBUS™ peripheral (e.g., NXP i.MX RT1170, Infineon XMC7200) is recommended to handle command framing and RWDS synchronization.

What is the purpose of the RWDS signal in read versus write operations?

In reads, RWDS outputs a strobe aligned to the first data byte to indicate initial latency and then toggles with each subsequent byte to synchronize capture. In writes, RWDS serves as a write mask - driven by the host to suppress individual byte lanes, enabling partial writes without read-modify-write cycles.