Infineon Technologies S27KL0642DPBHB020

Overview

S27KL0642DPBHB020 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz, delivering 400 MBps throughput, and featuring configurable burst lengths (16–128 bytes), partial array refresh, and industrial temperature range (–40°C to +85°C) in 24-ball FBGA package - used as high-bandwidth, low-pin-count memory expansion for microcontrollers in automotive instrument clusters.

For engineers reviewing the S27KL0642DPBHB020 datasheet, S27KL0642DPBHB020 pinout, S27KL0642DPBHB020 application, or S27KL0642DPBHB020 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS strobe behavior during read/write, DCARS phase-shift support, burst configuration register settings, and hybrid sleep mode current consumption at 105°C.

Technical Context

The device implements a self-refresh DRAM core with integrated refresh control logic, eliminating host-managed refresh cycles while maintaining static RAM-like interface simplicity. It uses LV-CMOS signaling on all I/Os and supports both single-ended (CK) and optional differential (CK/CK#) clocking, with RWDS serving as bidirectional data strobe - output during reads to indicate latency and data eye centering, input during writes as mask signal.

HYPERBUS™ transactions begin with CS# assertion and six-byte command/address transfer over DQ[7:0], followed by initial access latency (1× or 2× count), then DDR-aligned data transfers. The internal architecture decouples 16-bit array accesses from 8-bit external bus transfers, enabling efficient burst handling without address multiplexing or separate control lines.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KS0642DPBHB020 (identical function) and IS66WV1288GBLL-100B3LI (parallel SRAM), the S27KL0642DPBHB020 delivers optimal balance of bandwidth, pin efficiency, and ultra-low standby power - making it the preferred choice for new designs targeting MCU-based embedded systems with space and thermal constraints.

Availability

S27KL0642DPBHB020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, medical patient monitors, and smart home gateways requiring stable component supply, AEC-Q100 compliance, and long-term lifecycle support.

Supply support for S27KL0642DPBHB020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets MCU-based embedded systems needing high-speed, low-pin-count memory expansion - designed to replace parallel NOR/PSRAM and reduce system-level complexity without sacrificing bandwidth.

FAQ

What is the purpose of the RWDS signal in S27KL0642DPBHB020?

RWDS is a bidirectional strobe: during reads, it outputs a pulse aligned to the first data byte to indicate initial latency and center the data eye; during writes, it serves as an input byte mask (DQM equivalent). Its phase can be adjusted via DCARS for improved timing margin at 200 MHz - no external strobe generation logic is required.

Does S27KL0642DPBHB020 require external refresh management?

No. The device contains autonomous self-refresh logic that executes periodic row refreshes without host intervention. The host sees static RAM behavior - no refresh commands, timers, or scheduling are needed. Internal refresh occurs only during idle periods between transactions, enforced by limiting burst duration per datasheet guidelines.

Can S27KL0642DPBHB020 operate with only single-ended clock (CK)?

Yes. The device supports single-ended CK operation (11-signal mode) as standard. Differential CK/CK# is optional and required only when enabling DCARS functionality or improving noise immunity in electrically harsh environments like automotive chassis domains.

What is the minimum supported burst length and how is it configured?

The minimum wrapped burst length is 16 bytes (8 clocks), set via Configuration Register 0 (bits [5:4]). Burst mode is selected at power-up or runtime via register write; linear burst is also supported. No hardware strapping is needed - all configurations are software-controlled through the HYPERBUS™ register space.