Infineon Technologies S27KL0642DPBHB023

Overview

S27KL0642DPBHB023 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz, delivering 400 MBps throughput, and housed in a 24-ball FBGA package for industrial (-40°C to +85°C) and automotive AEC-Q100 Grade 2 (-40°C to +105°C) applications.

For engineers reviewing the S27KL0642DPBHB023 datasheet, S27KL0642DPBHB023 pinout, S27KL0642DPBHB023 application, or S27KL0642DPBHB023 equivalent, key selection considerations include HYPERBUS™ timing compliance, RWDS-driven read/write strobe synchronization, configurable burst lengths (16–128 bytes), partial array refresh support, and DCARS phase-shifted read strobe capability for timing margin optimization.

Technical Context

This PSRAM integrates on-die refresh control logic that autonomously manages DRAM array refresh without host intervention, presenting static RAM-like behavior to the controller. It uses a low-pin-count 11- or 12-signal HYPERBUS™ interface with bidirectional RWDS for latency indication and data masking/strobing.

The device implements DDR signaling on an 8-bit DQ bus synchronized to single-ended or differential CK/CK#, supports linear and wrapped burst modes, and includes hybrid sleep and deep power-down modes with sub-20 µA current draw at 105°C - enabling low-power embedded and automotive memory expansion where SRAM density is insufficient and DRAM complexity must be hidden.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3. Package footprint matches JEDEC MO-279AB standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM/HYPERBUS™ memory expansion applications.

Compared with S27KL0642DPBHB023, the 020 variants offer identical performance and reliability but reflect earlier manufacturing revisions - the 023 version ensures access to the most recent wafer lot controls and long-term supply continuity for automotive programs.

Availability

S27KL0642DPBHB023 is available at Aetrix Electronics and suitable for automotive ADAS systems, industrial HMIs, portable medical devices, and smart factory gateways requiring stable component supply, AEC-Q100 qualification, and long-term lifecycle support.

Supply support for S27KL0642DPBHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ product line, designed specifically to replace parallel NOR/NAND and QSPI flash in high-bandwidth, low-pin-count memory expansion applications for automotive, industrial, and IoT edge processors.

FAQ

What is the purpose of the RWDS signal in S27KL0642DPBHB023?

RWDS is a bidirectional strobe used to indicate initial access latency before read data begins, serve as read data strobe aligned to DQ transitions, and act as write data mask during write operations. Its timing is critical for setup/hold margin in DDR transfers and is optionally phase-shifted via DCARS to center transitions in the data eye at 200 MHz.

Does S27KL0642DPBHB023 require external refresh management?

No. The device contains integrated self-refresh logic that autonomously performs DRAM array refresh during idle periods. The host processor interacts with it as if it were static RAM - no refresh commands, counters, or scheduling are needed from firmware or hardware.

Can S27KL0642DPBHB023 operate at both 1.8 V and 3.0 V simultaneously?

No. VCC and VCCQ must be supplied at the same nominal voltage: either 1.8 V ±0.15 V or 3.0 V ±0.3 V. Mixed-voltage operation is not supported. The device detects supply level at power-up and configures I/O thresholds accordingly.

What is the minimum supported burst length for linear mode?

The shortest linear burst length is 16 bytes (8 clock cycles). Burst length is configured via Configuration Register 0 (CR0), and linear mode does not support sub-16-byte transfers. Wrapped burst mode also starts at 16 bytes and scales to 128 bytes in powers of two.