Infineon Technologies S27KL0642DPBHI023

Overview

S27KL0642DPBHI023 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz clock rate and 400 MBps throughput. It features 8-bit DQ bus, bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), and industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used in embedded microcontroller systems requiring low-pin-count, high-bandwidth external memory without host-managed refresh.

For engineers reviewing the S27KL0642DPBHI023 datasheet, S27KL0642DPBHI023 pinout, S27KL0642DPBHI023 application, or S27KL0642DPBHI023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS phase alignment for read capture, partial array refresh configuration, and voltage-mode compatibility (1.8 V vs. 3.0 V I/O).

Technical Context

This PSRAM implements a self-refresh DRAM core with integrated refresh controller, eliminating host-side refresh management. Its HYPERBUS™ interface uses a 12-signal bus (including optional CK#/CK differential pair) and encodes command/address/data over the same 8-bit DQ lines using time-multiplexed 6-byte CA sequences.

Read transactions begin with CS# assertion and CA transfer, followed by initial latency (1× or 2× count), then DDR-aligned data transfers synchronized to RWDS edge alignment - optionally enhanced via DCARS for center-aligned strobe positioning within the read data eye.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0642DPBHI023, the S27KS0642DPBHI020 adds AEC-Q100 Grade 2 compliance for under-hood use, while S27KL0642DPBHI020 extends thermal range to +105°C - both retain identical HYPERBUS™ timing, burst behavior, and power modes.

Availability

S27KL0642DPBHI023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, medical patient monitors, and edge AI inference accelerators requiring stable component supply with guaranteed long-term availability.

Supply support for S27KL0642DPBHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT markets.

This device belongs to the HYPERRAM™ product line, designed specifically to replace parallel NOR/NAND flash in embedded systems needing high-speed, low-pin-count external memory with SRAM-like ease of use.

FAQ

What is the difference between S27KL0642DPBHI023 and S27KL0642DPBHI020?

The S27KL0642DPBHI023 is rated for Industrial temperature range (–40°C to +85°C), while the S27KL0642DPBHI020 is rated for Industrial Plus (–40°C to +105°C). Both share identical electrical specifications, pinout, HYPERBUS™ timing, and feature set - the distinction lies solely in thermal qualification and associated reliability testing.

Does S27KL0642DPBHI023 require external refresh circuitry?

No. This device integrates a self-refresh controller that autonomously manages DRAM array refresh during idle periods. The host processor accesses it as if it were static RAM - no software or hardware refresh commands are needed, simplifying system design and reducing CPU overhead.

Can RWDS be used as a pure input during writes without enabling DCARS?

Yes. In standard operation, RWDS functions as an input during write transactions to serve as a write data mask. DCARS is an optional enhancement for read strobe center-alignment and is disabled by default; RWDS retains its native bidirectional behavior unless explicitly configured via Configuration Register 1.

What HYPERBUS™ command encoding does S27KL0642DPBHI023 use for register access?

Register access uses Command Address (CA) byte 0 value 0x00 for Configuration Register 0 and 0x01 for Configuration Register 1. These are written via standard HYPERBUS™ write transactions to address 0x000000, with CA bytes 1–5 defining register fields per Infineon's register map in Section 6.3 of the datasheet.