Infineon Technologies S27KL0642DPBHI030
- Part No.:
- S27KL0642DPBHI030
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 24-VBGA
- Datasheet:
-
S27KL0642DPBHI030.pdf
- Description:
- IC PSRAM 64MBIT HYPERBUS 24FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,279
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Product details
Overview
S27KL0642DPBHI030 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz clock rate and 400 MBps throughput. It features bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), partial/full array refresh, and industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used as high-bandwidth, low-pin-count external memory for microcontrollers in automotive instrument clusters.
For engineers reviewing the S27KL0642DPBHI030 datasheet, S27KL0642DPBHI030 pinout, S27KL0642DPBHI030 application, or S27KL0642DPBHI030 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS phase alignment support, DCARS capability, burst configuration flexibility, and AEC-Q100 Grade 3 qualification for automotive use.
Technical Context
This PSRAM integrates DRAM array with on-die refresh controller and HYPERBUS™ physical layer logic, eliminating host-managed refresh. Its DDR interface uses CK/CK# differential clocking (optional) and 8-bit DQ bus with RWDS as bidirectional data strobe-output during read latency indication and read data capture, input as write mask.
The device implements hybrid sleep and deep power-down modes, supports linear/wrapped burst configurations, and allows dynamic adjustment of output drive strength. Internal register space enables runtime control of burst length, refresh partitioning (1/8 to full array), and DCARS phase offset for optimized read-data eye positioning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 64 Mbit (8 MB) pseudo-static RAM with self-refresh DRAM core |
| Interface Standard | HYPERRAM™ compliant HYPERBUS™ DDR interface with 11–12 signal count |
| Max Clock Rate | 200 MHz DDR - enables 400 MBps peak bandwidth on 8-bit DQ bus |
| Burst Lengths | Configurable wrapped bursts: 16/32/64/128 bytes (8/16/32/64 clocks) |
| Access Latency | tACC ≤ 35 ns - defines minimum time from command to first valid read data |
| Supply Voltage | 1.8 V or 3.0 V VCC/VCCQ - dual-voltage I/O and core support for mixed-signal SoC interfacing |
| Operating Temp | –40°C to +85°C (Industrial) - qualified per AEC-Q100 Grade 3 for automotive dashboard systems |
| Package | 24-ball FBGA, 5 mm × 5 mm, 0.8 mm pitch - compact footprint for space-constrained PCBs |
Pinout & Package
24-ball FBGA (5 × 5 array, 0.8 mm pitch) with ball-out defined per Infineon datasheet Rev. *I, page 49–50. Pin functions validated from Signal Description section (page 9) and Physical Interface chapter.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS# | Chip Select Input | Active-low enable for command/address/data transactions; controls entry/exit from power modes |
| CK / CK# | Differential Clock Input | DDR timing reference; optional single-ended CK mode reduces signal count to 11 pins |
| RWDS | Bidirectional Strobe | Output: indicates refresh latency start and reads data edge alignment; input: masks write data per byte |
| DQ[7:0] | 8-bit Bidirectional Data Bus | LV-CMOS I/O shared for CA transfer (command/address) and read/write data in time-multiplexed fashion |
| RESET# | Hardware Reset Input | Asynchronous active-low reset that clears internal state and forces re-initialization sequence |
| VCC / VCCQ | Power Supplies | VCC = DRAM core (1.8 V or 3.0 V); VCCQ = I/O buffers (same voltage, decoupled supply domains) |
| VSS | GND Terminals | Four dedicated ground balls ensure low-impedance return paths for high-speed switching noise suppression |
Key Features
| Feature | Design Value |
|---|---|
| Self-refresh DRAM Core | On-die refresh controller eliminates host CPU overhead and timing-critical refresh scheduling |
| HYPERBUS™ DDR Interface | 11–12 signal count enables high bandwidth with minimal PCB routing complexity vs parallel NOR/NAND |
| DCARS Support | Programmable phase-shifted RWDS clock improves read-data setup/hold margin across process/voltage/temperature |
| Hybrid Sleep Mode | Retains data while reducing current to 330 µA (1.8 V) - balances low-power retention and fast wake-up |
| Configurable Burst Wrap | Runtime-selectable wrap boundaries (16–128 B) optimize cache line alignment and reduce bus turnaround overhead |
| AEC-Q100 Grade 3 | Qualified for automotive instrument clusters and ADAS display subsystems requiring –40°C to +85°C operation |
Applications
| Automotive Instrument Cluster | Industrial HMI Display Controller |
|---|---|
Use Scenario: Real-time rendering of gauges, warning icons, and navigation overlays on TFT-LCD panels with frame rates ≥60 Hz. IC Role / Device Role / Timing Role: External PSRAM providing low-latency, high-throughput frame buffer storage interfaced directly to MCU's HYPERBUS™ host controller. Use Value: 400 MBps bandwidth sustains 1024×600@32bpp frame writes without stalling CPU; DCARS ensures robust read timing under EMI-prone vehicle environments. | Use Scenario: Local GUI caching and firmware update staging in programmable logic controllers with embedded web servers. IC Role / Device Role / Timing Role: Non-volatile-adjacent memory supplementing internal SRAM for dynamic UI asset loading and OTA patch buffering. Use Value: Wrapped 64-byte bursts align with Ethernet MTU and HTTP chunk sizes; hybrid sleep mode cuts idle power by >99% vs standard PSRAM. |
| Medical Patient Monitor UI | Smart Home Gateway Audio Buffer |
Use Scenario: Concurrent display of real-time waveforms (ECG, SpO₂), vital sign numerics, and alarm history on color LCDs. IC Role / Device Role / Timing Role: High-reliability external memory storing waveform buffers and UI assets with deterministic access latency ≤35 ns. Use Value: AEC-Q100 Grade 3 qualification ensures long-term stability in clinical environments; partial refresh (1/4 array) minimizes interrupt latency during critical data acquisition. | Use Scenario: Low-jitter audio streaming buffer for multi-room synchronized playback using Bluetooth LE Audio and Matter protocols. IC Role / Device Role / Timing Role: Shared memory resource between application processor and DSP co-processor for real-time PCM sample exchange. Use Value: RWDS-as-write-mask enables precise byte-level audio sample updates without full-word overwrites; 24-ball FBGA simplifies 4-layer PCB layout in compact gateway enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress S27KS0642DPBHI030 | Same die, identical pinout and electrical specs; rebranded post-Infineon acquisition - functionally identical | No functional difference; legacy design-in continuity for Cypress-originated BOMs | Select when maintaining Cypress-designated part numbers for documentation or procurement traceability |
| ISSI IS66WV12816EBLL-200B3LI | Parallel QDR SRAM (128Mbit, 16-bit bus); no self-refresh, requires external refresh management | Higher pin count (48-pin TSOP), fixed 16-bit interface, no HYPERBUS™ compatibility | Choose only if existing design uses parallel SRAM interface and cannot adopt serial DDR bus architecture |
Compared with S27KL0642DPBHI030, the Cypress variant offers drop-in replacement assurance, while the ISSI SRAM demands board-level redesign and host refresh logic - making the Infineon part optimal for new HYPERBUS™-based designs prioritizing density, power, and pin efficiency.
Availability
S27KL0642DPBHI030 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, medical patient monitors, and smart home gateways requiring stable component supply across extended product lifecycles.
Supply support for S27KL0642DPBHI030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT markets.
This device belongs to the HYPERRAM™ family, designed specifically to replace parallel NOR/NAND and SRAM in MCU-based systems where high bandwidth, low pin count, and self-refresh simplicity are critical.
FAQ
What is the difference between S27KL0642DPBHI030 and S27KS0642DPBHI030?
S27KL0642DPBHI030 and S27KS0642DPBHI030 are identical silicon devices with identical electrical specifications, pinout, and package. The 'L' and 'S' prefixes reflect post-acquisition branding alignment: 'L' denotes Infineon-labeled parts, 'S' denotes legacy Cypress labeling. Both share the same datasheet (002-24692 Rev. *I) and are fully interchangeable in hardware design and firmware.
Does S27KL0642DPBHI030 require external refresh circuitry?
No. S27KL0642DPBHI030 contains an integrated self-refresh controller that autonomously manages DRAM refresh cycles without host intervention. The host only needs to observe initial latency indications via RWDS and limit burst duration per datasheet Section 1 - no external refresh signals or timing control are required.
Can this device operate with single-ended clock only?
Yes. S27KL0642DPBHI030 supports both single-ended (CK only) and differential (CK/CK#) clock modes. In single-ended mode, it uses 11 signal lines (CS#, CK, RWDS, DQ[7:0], RESET#); differential mode adds CK# for improved noise immunity at 12 signals. Configuration is fixed by internal metal option - PBH suffix indicates differential-capable version.
What HYPERBUS™ transaction types does this device support?
S27KL0642DPBHI030 supports full HYPERBUS™ command set: read/write memory array transactions, register read/write (for configuration registers), and status polling. It implements all mandatory timing parameters including tRWR (read-write recovery), tACC (access latency), and tRWDS (RWDS assertion delay), as specified in Infineon datasheet Sections 4.2–4.4 and Table 10.5.
S27KL0642DPBHI030 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HYPERRAM™ KL
- Package/Case:
- 24-VBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- PSRAM
- Technology:
- PSRAM (Pseudo SRAM)
- Memory Size:
- 64Mbit
- Memory Organization:
- 8M x 8
- Memory Interface:
- HyperBus
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- 36ns
- Access Time:
- 36 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-FBGA (6x8)
S27KL0642DPBHI030 FAQ
1.How can I place an order for S27KL0642DPBHI030 through Aetrix?
Please submit a Request for Quotation (RFQ) for S27KL0642DPBHI030 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S27KL0642DPBHI030 reliable?
The price and inventory of S27KL0642DPBHI030 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S27KL0642DPBHI030 is usually 5 days.
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S27KL0642DPBHI030 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S27KL0642DPBHI030 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S27KL0642DPBHI030?
For technical support, including S27KL0642DPBHI030 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S27KL0642DPBHI030 requirements.
6.How does Aetrix verify that S27KL0642DPBHI030 is sourced from the original manufacturer or authorized distributors?
All S27KL0642DPBHI030 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S27KL0642DPBHI030 meets industry standards.
7.What is the process for return or replacement of S27KL0642DPBHI030?
All S27KL0642DPBHI030 units undergo pre-shipment inspection (PSI). If there is an issue with S27KL0642DPBHI030, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S27KL0642DPBHI030 part is unused and in its original packaging.
Return procedure for S27KL0642DPBHI030:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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