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Infineon Technologies S27KL0642DPBHI033

Part No.:
S27KL0642DPBHI033
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
24-VBGA
Datasheet:
AetrixS27KL0642DPBHI033.pdf
Description:
IC PSRAM 64MBIT HYPERBUS 24FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,281

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Product details

Overview

S27KL0642DPBHI033 from Infineon Technologies is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz clock rate and delivering up to 400 MBps data throughput in linear burst mode; it features bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), and industrial temperature range (–40°C to +85°C); used as high-bandwidth, low-pin-count external memory for microcontroller-based embedded systems requiring seamless SRAM-like interface.

For engineers reviewing the S27KL0642DPBHI033 datasheet, S27KL0642DPBHI033 pinout, S27KL0642DPBHI033 application, or S27KL0642DPBHI033 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS phase alignment support, partial array refresh configuration, DCARS capability, and FBGA-24 thermal/mechanical fit in space-constrained PCB layouts.

Technical Context

This PSRAM integrates DRAM array with on-die refresh controller and HYPERBUS™ physical layer logic, eliminating host-managed refresh while maintaining DDR efficiency. It uses LV-CMOS signaling on all I/Os, supports both single-ended (11-signal) and differential clock (12-signal) configurations, and relies on RWDS edge alignment-center-aligned during reads and input-masked during writes-to manage timing margins across voltage/temperature corners.

The device implements hybrid sleep and deep power-down modes with sub-15 µA current draw at 105°C, and supports configurable output drive strength and wrapped/linear burst modes. Its 38-nm process enables 35 ns maximum access time at 1.8 V, with initial latency dynamically indicated via RWDS assertion at transaction start.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density64 Mbit (8 MB), organized as 8,388,608 × 8-bit for byte-accessible external memory expansion
Interface StandardHYPERRAM™ compliant HYPERBUS™ DDR interface with 8-bit DQ bus and bidirectional RWDS strobe
Max Clock Rate200 MHz DDR - enables 400 MBps peak throughput without complex routing or termination schemes
Burst LengthConfigurable: 16/32/64/128 bytes (8/16/32/64 clocks) - balances bandwidth utilization and transaction overhead
Access Time (tACC)35 ns max at 1.8 V - defines minimum read latency before valid data appears on DQ[7:0]
Power ModesHybrid Sleep (330 µA @ 2.0 V, 105°C) and Deep Power-Down (12 µA @ 2.0 V, 105°C) - enable ultra-low idle power in battery-sensitive designs
Operating TempIndustrial grade: –40°C to +85°C - qualified for extended ambient operation in industrial control and HMI applications
Supply VoltagesVCC/VCCQ = 1.8 V ±0.15 V or 3.0 V ±0.3 V - dual-voltage support simplifies integration with mixed-supply SoCs

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3 (MSL3).

Pin/TerminalCircuit RoleDesign Meaning
DQ[7:0]Data Input/Output Bus8-bit bidirectional DDR data path; transfers two bytes per clock cycle in aligned bursts
CK / CK#Differential Clock InputsOptional differential pair; enables precise timing capture of CA and data; CK# required for DCARS mode
RWDSRead/Write Data StrobeBidirectional: output indicates refresh latency/start of read data; input masks write data during WR transactions
CS#Chip SelectActive-low enable; must be asserted before CA transmission and held for full transaction duration
RESET#Hardware ResetAsynchronous active-low signal that clears internal state and forces re-initialization of refresh logic
VCC / VCCQPower SuppliesVCC powers core DRAM array; VCCQ powers I/O buffers - allows independent voltage scaling for noise isolation
VSSGNDFour dedicated ground balls (B1, B4, D1, D4) provide low-inductance return paths for switching currents

Key Features

FeatureDesign Value
Self-Refresh DRAM CoreOn-die refresh controller eliminates host CPU intervention - presents SRAM-like interface while retaining DRAM density/cost advantage
DCARS SupportPhase-shifted RWDS output during reads moves strobe edge into center of data eye - improves timing margin for high-speed layout without added skew compensation
Partial Array RefreshConfigurable refresh of 1/8, 1/4, or 1/2 array - reduces average current during idle periods versus full-array refresh
HYPERBUS™ Low-Signal-Count Interface11–12 signal interface (vs. 30+ for parallel NOR/NAND) - cuts PCB layer count, routing complexity, and EMI in compact MCU designs
Configurable Drive StrengthAdjustable output driver strength per DQ pin - optimizes signal integrity across varying trace lengths and load capacitances

Applications

Automotive Instrument ClustersIndustrial HMI Panels

Use Scenario: Real-time rendering of vector graphics and animated UI elements in digital dashboards with limited MCU external memory bus resources.

IC Role / Device Role / Timing Role: External PSRAM providing 8 MB of low-latency, burst-accessible frame buffer memory mapped directly to MCU AXI/AHB bus via HYPERBUS™ controller.

Use Value: Enables 60 Hz UI updates with <35 ns tACC and 400 MBps throughput while occupying only 12 pins - avoids need for wide parallel memory interface or costly LPDDR PHY.

Use Scenario: Local storage of configuration profiles, alarm logs, and multi-language UI assets in programmable logic controllers and panel PCs.

IC Role / Device Role / Timing Role: Non-volatile-adjacent volatile memory serving as fast-access scratchpad for runtime data structures and firmware overlays.

Use Value: Delivers SRAM-equivalent ease of use with DRAM-level density; hybrid sleep mode draws <330 µA during standby - extends uptime in fanless, thermally constrained enclosures.

Edge AI Sensor NodesMedical Portable Monitors

Use Scenario: Buffering real-time sensor fusion data (IMU, ECG, environmental) prior to on-device inference or wireless upload in battery-powered wearables.

IC Role / Device Role / Timing Role: High-throughput, low-power memory staging area interfaced to Cortex-M7/M33 with integrated HYPERBUS™ controller.

Use Value: 12 µA deep power-down current extends battery life between sampling intervals; configurable burst length minimizes active time per data chunk.

Use Scenario: Supporting high-resolution waveform display and trend analysis in portable ECG or SpO₂ monitors with strict EMC and thermal limits.

IC Role / Device Role / Timing Role: External memory co-located with display controller for double-buffered screen rendering and patient data caching.

Use Value: FBGA-24 package fits tight board space; –40°C to +85°C rating ensures reliability across clinical environments; RWDS-driven timing simplifies layout validation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress S27KS0642DPBHI033Same die, identical electrical specs and pinout; rebranded by Infineon post-acquisition - fully interchangeable with no design change.No functional difference; same automotive qualification (AEC-Q100 Grade 2), same DCARS and HYPERBUS™ feature set.Select when sourcing from legacy Cypress-designated channels or requiring cross-reference traceability.
ISSI IS66WV1288GBLL-150B3LIParallel async SRAM (128 Mbit, 3.3 V), 32-pin SOIC; no self-refresh, no DDR, no RWDS - requires full address/data bus and higher pin count.Lacks burst efficiency and low-power modes; suitable only where deterministic zero-wait-state access is mandatory and PCB space permits larger package.Choose only if HYPERBUS™ controller is unavailable and system demands true static timing with no latency variation.

Compared with S27KL0642DPBHI033, the Cypress variant offers drop-in compatibility and identical performance, while the ISSI SRAM trades interface simplicity and power efficiency for absolute timing predictability and wider voltage tolerance - making it viable only in non-battery, non-space-constrained legacy designs.

Availability

S27KL0642DPBHI033 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, and edge AI sensor nodes requiring stable component supply, AEC-Q100 qualification, and long-term lifecycle assurance.

Supply support for S27KL0642DPBHI033 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ product line, designed specifically to replace parallel NOR/NAND and legacy SRAM in MCU-based systems where high bandwidth, low pin count, and embedded-friendly refresh behavior are critical.

FAQ

What is the function of the RWDS signal in S27KL0642DPBHI033?

RWDS is a bidirectional strobe: during reads, it outputs a pulse indicating initial access latency and then serves as read data strobe aligned to data edges; during writes, it acts as input mask signal to suppress invalid data transitions. Its timing is critical for setup/hold compliance and is configurable for DCARS offset in high-speed layouts.

Does S27KL0642DPBHI033 require external refresh management?

No. The device contains on-die self-refresh logic that automatically schedules DRAM array refresh during idle periods. The host only needs to observe initial latency indications via RWDS and limit burst durations per datasheet guidelines - no refresh commands or timing control are required from the MCU.

Can S27KL0642DPBHI033 operate with only single-ended clock (CK) instead of differential (CK/CK#)?

Yes. The device supports both configurations: 11-signal mode (CK only) and 12-signal mode (CK/CK#). Differential clock is required only when enabling DCARS functionality; otherwise, single-ended CK meets all timing specifications up to 200 MHz with proper PCB layout and termination.

What is the significance of the "PBH" suffix in S27KL0642DPBHI033?

The "PBH" denotes the 24-ball FBGA package (5×5 mm), industrial temperature grade (–40°C to +85°C), and lead-free/RoHS-compliant construction. The "I033" suffix specifies tape-and-reel packaging, 13-inch reel, and standard moisture sensitivity level (MSL3), per Infineon's ordering nomenclature.

S27KL0642DPBHI033 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HYPERRAM™ KL
Package/Case:
24-VBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
PSRAM
Technology:
PSRAM (Pseudo SRAM)
Memory Size:
64Mbit
Memory Organization:
8M x 8
Memory Interface:
HyperBus
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
36ns
Access Time:
36 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-FBGA (6x8)

S27KL0642DPBHI033 FAQ

1.How can I place an order for S27KL0642DPBHI033 through Aetrix?

Please submit a Request for Quotation (RFQ) for S27KL0642DPBHI033 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S27KL0642DPBHI033 reliable?

The price and inventory of S27KL0642DPBHI033 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S27KL0642DPBHI033 is usually 5 days.

3.What payment methods are accepted for S27KL0642DPBHI033?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S27KL0642DPBHI033 transactions.

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4.How is shipping managed for S27KL0642DPBHI033?

S27KL0642DPBHI033 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S27KL0642DPBHI033 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S27KL0642DPBHI033?

For technical support, including S27KL0642DPBHI033 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S27KL0642DPBHI033 requirements.

6.How does Aetrix verify that S27KL0642DPBHI033 is sourced from the original manufacturer or authorized distributors?

All S27KL0642DPBHI033 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S27KL0642DPBHI033 meets industry standards.

7.What is the process for return or replacement of S27KL0642DPBHI033?

All S27KL0642DPBHI033 units undergo pre-shipment inspection (PSI). If there is an issue with S27KL0642DPBHI033, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S27KL0642DPBHI033 part is unused and in its original packaging.

Return procedure for S27KL0642DPBHI033:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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