Infineon Technologies S27KL0642DPBHV020

Overview

S27KL0642DPBHV020 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz clock rate and 400 MBps throughput. It features bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), partial/full array refresh, and industrial-plus temperature range (–40°C to +105°C) in 24-ball FBGA package. Used in embedded systems requiring low-pin-count high-bandwidth memory expansion without host-managed refresh.

For engineers reviewing the S27KL0642DPBHV020 datasheet, S27KL0642DPBHV020 pinout, S27KL0642DPBHV020 application, or S27KL0642DPBHV020 equivalent, key selection factors include HYPERBUS™ timing compliance, RWDS phase alignment for read eye optimization, DCARS support, hybrid sleep/deep power-down entry latency, and VCC/VCCQ voltage configuration compatibility with host controller I/O domains.

Technical Context

This PSRAM integrates DRAM array with on-die refresh control and HYPERBUS™ physical layer logic, eliminating external refresh management. Its DDR interface uses center-aligned command/address and edge-aligned data on DQ[7:0], with RWDS serving as both read-data strobe and write-data mask - dynamically driven by internal timing logic based on transaction type and latency state.

The device implements configurable output drive strength, linear/wrapped burst modes, and optional differential clock (CK/CK#) support. DCARS functionality shifts RWDS phase by one clock cycle during reads to center transitions within the data eye, directly improving timing margin at 200 MHz operation under varying signal integrity conditions.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0642DPBHV020, the Cypress rebrand offers identical performance and drop-in compatibility, while the ISSI SRAM trades bandwidth efficiency and power savings for absolute timing determinism and interface simplicity - making it viable only in non-HYPERBUS™ designs with ample board space.

Availability

S27KL0642DPBHV020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI accelerators, and medical imaging front-ends requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S27KL0642DPBHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ product line, designed specifically to replace parallel NOR/PSRAM in microcontroller-based systems where pin count, power, and bandwidth must be optimized simultaneously - targeting cost-sensitive, thermally constrained embedded applications.

FAQ

What is the function of the RWDS signal in read versus write operations?

RWDS serves as a bidirectional strobe: during reads, it is driven by the S27KL0642DPBHV020 to indicate valid data timing on DQ[7:0]; during writes, it is driven by the host as a byte mask to selectively update individual DQ lines. Its phase is adjustable via DCARS to align with read data eye center, improving timing margin at 200 MHz.

Does this device require external refresh circuitry or host software intervention?

No. The S27KL0642DPBHV020 contains fully autonomous on-die refresh logic that executes partial or full array refreshes during idle periods or transaction gaps. Host only needs to observe maximum burst length limits and initial latency indications - no refresh commands or timers are required.

Can the device operate with only single-ended clock (CK), or is differential clock (CK/CK#) mandatory?

Single-ended clock operation is fully supported: CK is used as the primary clock input, and CK# may be left unconnected or tied to VSS. Differential mode is optional and improves noise immunity in electrically noisy environments but is not required for specification compliance or basic functionality.

How does Hybrid Sleep mode differ from Deep Power-Down in terms of wake-up latency and data retention?

Hybrid Sleep retains data while disabling clock receivers and reducing I/O power, enabling wake-up in sub-microsecond time with no initialization delay. Deep Power-Down cuts deeper power (12–15 µA) but requires ~100 µs wake-up and internal reinitialization before next access - both retain data across the full –40°C to +105°C range.