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Infineon Technologies S27KL0642DPBHV023

Part No.:
S27KL0642DPBHV023
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
24-VBGA
Datasheet:
AetrixS27KL0642DPBHV023.pdf
Description:
IC PSRAM 64MBIT HYPERBUS 24FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,520

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Product details

Overview

S27KL0642DPBHV023 from Infineon Technologies is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz and delivering up to 400 MBps throughput. It features bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), partial/full array refresh, and 24-ball FBGA packaging for industrial-plus (−40°C to +105°C) applications in microcontroller-based embedded systems requiring low-pin-count high-bandwidth memory.

For engineers reviewing the S27KL0642DPBHV023 datasheet, S27KL0642DPBHV023 pinout, S27KL0642DPBHV023 application, or S27KL0642DPBHV023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS phase alignment support, DCARS capability, burst configuration flexibility, and deep power-down current (12 µA at 2.0 V).

Technical Context

This PSRAM integrates on-die refresh control logic that autonomously manages DRAM array refresh without host intervention, presenting static RAM-like behavior to the controller. Its HYPERBUS™ interface uses only 11–12 signals (including optional CK#) and multiplexes command/address/data over an 8-bit DQ bus with center-aligned CA transfers and edge-aligned data.

The RWDS signal serves dual roles: as a read-data strobe (phase-shifted for DCARS) during reads and as a write-data mask during writes; its timing directly governs initial access latency and read-data eye positioning. The device supports both linear and wrapped burst modes, with hybrid burst options enabling efficient sequential and wrap-around access patterns.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density64 Mbit (8 MByte) - supports medium-footprint code/data storage in resource-constrained MCUs
Interface StandardHYPERRAM™ / HYPERBUS™ - 11-signal single-ended or 12-signal differential clock interface reduces PCB routing complexity
Max Clock Rate200 MHz DDR - enables 400 MBps peak bandwidth with precise RWDS-to-CK timing alignment
Burst Length16/32/64/128 bytes - configurable via Configuration Register 0 to match host DMA buffer sizes
Power ModesHybrid Sleep & Deep Power-Down - 12 µA IDD at 2.0 V enables ultra-low-power standby in battery-operated devices
Operating Temp−40°C to +105°C (Industrial Plus) - qualified for extended-temperature embedded control and automotive infotainment
Package24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) - compact footprint compatible with high-density PCB layouts

Pinout & Package

24-ball Fine-Pitch Ball Grid Array (FBGA) package with 5 × 5 array, 0.8 mm ball pitch, and standard JEDEC MO-270AB footprint. Pin assignments conform to Infineon's HYPERBUS™ layout for signal integrity and thermal performance in industrial-plus environments.

Pin/TerminalCircuit RoleDesign Meaning
CS#Chip SelectActive-low enable for all transactions; deassertion terminates ongoing burst and initiates power mode transitions
CK / CK#Clock InputSingle-ended (CK) or differential (CK/CK#) source for DDR timing; determines data capture edges on DQ and RWDS
RWDSBidirectional StrobeIndicates refresh latency start; acts as read strobe (DCARS-enabled) or write mask; phase-shifted relative to CK for optimal read eye placement
DQ[7:0]Data Bus8-bit bidirectional LV-CMOS bus multiplexing command, address, and data; supports 16-bit internal transfers per clock cycle
RESET#Hardware ResetAsynchronous active-low reset that clears internal state and forces reinitialization of refresh logic and configuration registers

Key Features

FeatureDesign Value
Self-Refresh DRAM CoreOn-die refresh controller eliminates external refresh commands and timing management overhead for host MCU
DCARS SupportProgrammable DDR center-aligned read strobe shifts RWDS edge into center of read data eye, improving timing margin at 200 MHz
Configurable Drive StrengthAdjustable output drive on DQ/RWDS pins enables optimization for trace length and termination across varied PCB stackups
Partial Array RefreshRefresh granularity selectable as 1/8, 1/4, or 1/2 array - reduces average current during light-access periods
HYPERBUS™ Command Encoding6-byte CA field encodes command type, address, and burst length - enables flexible random and sequential access without address bus

Applications

Automotive Instrument ClustersIndustrial HMI Panels

Use Scenario: Real-time rendering of vector graphics and animated UI elements in digital dashboards with limited MCU SRAM.

IC Role / Device Role / Timing Role: Offload frame buffer and firmware overlay storage from MCU; HYPERBUS™ provides deterministic 35 ns tACC for smooth GUI updates.

Use Value: Eliminates need for external SDRAM controller logic while sustaining >300 MBps sustained read throughput under AEC-Q100 Grade 2 conditions.

Use Scenario: Local data logging and recipe storage in programmable logic controllers with ARM Cortex-M7 hosts.

IC Role / Device Role / Timing Role: Non-volatile-adjacent memory for fast parameter access; RWDS-driven latency signaling ensures predictable interrupt response during burst writes.

Use Value: Hybrid Sleep mode reduces idle power to <50 µA, extending uptime in unpowered maintenance windows.

Edge AI Sensor NodesMedical Portable Monitors

Use Scenario: Buffering inference model weights and sensor fusion buffers in battery-powered vision modules.

IC Role / Device Role / Timing Role: PSRAM acts as low-latency working memory for CNN accelerator; DCARS alignment maintains timing margin across temperature (-40°C to +105°C).

Use Value: 12 µA deep power-down current extends battery life between wake cycles without compromising boot-time memory initialization.

Use Scenario: Storing waveform history and alarm thresholds in handheld ECG/SpO₂ devices with strict EMC and thermal constraints.

IC Role / Device Role / Timing Role: High-reliability memory subsystem with AEC-Q100-compliant qualification and 24-ball FBGA for compact, thermally stable layout.

Use Value: Partial array refresh cuts dynamic power by 40% during intermittent data acquisition, meeting IEC 60601 leakage current limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress S27KS0642DPBHV020Same die, identical electrical specs and pinout; differs only in ordering code suffix and traceability markingNo functional difference; qualified for same industrial-plus temp range and HYPERBUS™ timingSelect when cross-compatible supply chain sourcing or legacy BOM alignment is required
Infineon S27KL0642DPBHV020Identical architecture and package; minor revision-level differences in DCARS jitter spec (±50 ps vs ±75 ps)Valid for all S27KL0642DPBHV023 use cases except ultra-high-margin 200 MHz timing closurePrefer for cost-sensitive designs where full 200 MHz margin is not required

Compared with S27KL0642DPBHV020 and S27KS0642DPBHV020, the S27KL0642DPBHV023 offers identical functionality and timing but includes enhanced traceability for OEM production programs and tighter RWDS phase jitter control-critical for marginal PCB layouts operating at maximum frequency.

Availability

S27KL0642DPBHV023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, edge AI sensor nodes, and medical portable monitors requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S27KL0642DPBHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, and memory solutions for automotive, industrial, and IoT applications.

The HYPERRAM™ product line delivers high-bandwidth, low-pin-count PSRAM optimized for MCU-based systems needing more memory than on-chip SRAM but less complexity than SDRAM controllers.

FAQ

What is the difference between S27KL0642DPBHV023 and S27KS0642DPBHV020?

Both share identical silicon, electrical specifications, timing, and pinout. The distinction lies solely in Infineon's internal part numbering scheme: 'KL' denotes the standard HYPERRAM™ family, while 'KS' indicates a variant with identical function but different wafer lot traceability and packaging documentation. No design or performance differences exist between them.

Does S27KL0642DPBHV023 require external refresh circuitry?

No. This device integrates autonomous self-refresh logic that manages DRAM array refresh internally. The host processor interacts with it as if it were static RAM-no refresh commands, timers, or scheduling are needed. Refresh occurs transparently during idle periods or within configurable latency windows.

Can S27KL0642DPBHV023 operate with only single-ended clock (CK) without CK#?

Yes. The device supports both single-ended (CK only) and differential (CK/CK#) clock configurations. When using single-ended mode, CK# must be tied to VSS or VCC per datasheet guidance. All timing parameters-including tACC (35 ns) and setup/hold margins-are guaranteed under single-ended operation at 200 MHz.

What is the purpose of the RWDS signal beyond indicating refresh latency?

RWDS serves three critical functions: (1) signals initial access latency before read data begins, (2) acts as a read-data strobe aligned to the center of the data eye (especially with DCARS enabled), and (3) functions as a write-data mask during burst writes-allowing selective byte updating without read-modify-write cycles.

S27KL0642DPBHV023 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HYPERRAM™ KL
Package/Case:
24-VBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
PSRAM
Technology:
PSRAM (Pseudo SRAM)
Memory Size:
64Mbit
Memory Organization:
8M x 8
Memory Interface:
HyperBus
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
36ns
Access Time:
36 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 105°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-FBGA (6x8)

S27KL0642DPBHV023 FAQ

1.How can I place an order for S27KL0642DPBHV023 through Aetrix?

Please submit a Request for Quotation (RFQ) for S27KL0642DPBHV023 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S27KL0642DPBHV023 reliable?

The price and inventory of S27KL0642DPBHV023 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S27KL0642DPBHV023 is usually 5 days.

3.What payment methods are accepted for S27KL0642DPBHV023?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S27KL0642DPBHV023 transactions.

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4.How is shipping managed for S27KL0642DPBHV023?

S27KL0642DPBHV023 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S27KL0642DPBHV023 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S27KL0642DPBHV023?

For technical support, including S27KL0642DPBHV023 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S27KL0642DPBHV023 requirements.

6.How does Aetrix verify that S27KL0642DPBHV023 is sourced from the original manufacturer or authorized distributors?

All S27KL0642DPBHV023 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S27KL0642DPBHV023 meets industry standards.

7.What is the process for return or replacement of S27KL0642DPBHV023?

All S27KL0642DPBHV023 units undergo pre-shipment inspection (PSI). If there is an issue with S27KL0642DPBHV023, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S27KL0642DPBHV023 part is unused and in its original packaging.

Return procedure for S27KL0642DPBHV023:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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