Infineon Technologies S27KL0642GABHA020

Overview

S27KL0642GABHA020 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz clock rate and 400 MBps throughput. It features bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), partial/full array refresh, and 24-ball FBGA packaging for industrial (-40°C to +85°C) and automotive AEC-Q100 Grade 3 applications.

For engineers reviewing the S27KL0642GABHA020 datasheet, S27KL0642GABHA020 pinout, S27KL0642GABHA020 application, or S27KL0642GABHA020 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS phase alignment for read data capture, burst configuration register settings, DCARS support status, and deep power-down current (12 µA at 2.0 V, 105°C).

Technical Context

The device implements a DDR HYPERBUS™ interface with 8-bit DQ bus, single-ended or optional differential clock (CK/CK#), and bidirectional RWDS used as read-data strobe, write-data mask, and initial latency indicator. All command/address/data transfers occur over the same DQ[7:0] lines using time-multiplexed CA and data phases.

Internal logic includes self-refresh control that autonomously manages DRAM row refresh without host intervention, while enforcing transaction length limits to guarantee refresh window availability. Configuration registers govern wrapped/linear burst mode, output drive strength, and DCARS enablement - critical for timing margin optimization in high-speed read operations.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM/HYPERRAM™ applications.

Compared with S27KL0642GABHA020, the Cypress-branded variant offers identical performance and compatibility, while the S27KL0641GABHA020 provides halved density at matched timing - enabling scalable memory sizing without redesigning HYPERBUS™ layout or firmware timing parameters.

Availability

S27KL0642GABHA020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, edge AI inference accelerators, and medical imaging control units requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S27KL0642GABHA020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ family - designed specifically to replace parallel NOR/NAND flash and SRAM in bandwidth-constrained embedded systems requiring low-pin-count, high-speed, low-power memory expansion.

FAQ

Does S27KL0642GABHA020 require external refresh circuitry?

No. The device integrates self-refresh logic that autonomously manages DRAM row refresh during idle cycles. Host processors interact with it as a pseudo-static RAM - no refresh commands or timing management are needed from the system controller.

What is the purpose of the RWDS signal in read versus write operations?

In read operations, RWDS acts as a read-data strobe edge-aligned with DQ transitions to indicate valid data windows. In write operations, it functions as a write-data mask, allowing selective byte enablement without additional control lines - simplifying interface routing and reducing pin count.

Is DCARS functionality enabled by default on S27KL0642GABHA020?

No. DCARS is an optional feature controlled by Configuration Register 1 (bit CR1[2]). When enabled, RWDS transitions are phase-shifted relative to CK to center-align with read data; this must be configured via register write before high-speed read sequences.

How does Hybrid Sleep mode differ from Deep Power-Down in terms of wake-up latency and power savings?

Hybrid Sleep draws 330 µA at 2.0 V and supports fast wake-up (<1 µs) with retained memory content. Deep Power-Down consumes only 12 µA but requires full initialization (including internal refresh recovery) upon wake, adding ~100 µs latency - trade-off between ultra-low power and deterministic response time.