Infineon Technologies S27KL0642GABHA023

Overview

S27KL0642GABHA023 from Infineon is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V, supporting DDR transfers up to 200 MHz, delivering 400 MBps throughput, and featuring configurable burst lengths (16–128 bytes), partial array refresh, and industrial/automotive temperature grades (-40°C to +105°C). It serves as high-bandwidth, low-pin-count memory in microcontroller-based embedded systems requiring SRAM-like simplicity with DRAM density.

For engineers reviewing the S27KL0642GABHA023 datasheet, S27KL0642GABHA023 pinout, S27KL0642GABHA023 application, or S27KL0642GABHA023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS strobe behavior during read/write, DCARS phase-shifted strobe support, burst configuration register settings, and hybrid sleep vs. deep power-down current consumption at 105°C.

Technical Context

This PSRAM integrates on-die refresh control logic that autonomously manages DRAM array refresh without host intervention, enabling SRAM-like interface abstraction. Its HYPERBUS™ interface uses only 11–12 signals (including optional CK#), with command/address/data multiplexed over DQ[7:0] and RWDS serving dual roles: initial latency indicator and bidirectional data strobe/mask.

The device supports both single-ended (CK) and differential (CK/CK#) clocking, and includes DDR center-aligned read strobe (DCARS) functionality-where RWDS is phase-shifted by one-half clock cycle to align transitions within the read data eye-improving timing margin for high-speed reads at 200 MHz.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0642GABHA023, the S27KL0641GABHI020 sacrifices automotive qualification and DCARS for lower cost, while the IS66WV12816EBLL-150B3LI trades HYPERBUS™ efficiency and density for simple asynchronous timing - making the S27KL0642GABHA023 optimal for new designs prioritizing thermal robustness, high-speed burst access, and minimal PCB area.

Availability

S27KL0642GABHA023 is available at Aetrix Electronics and suitable for automotive ADAS modules, industrial HMIs, portable medical devices, and smart home gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S27KL0642GABHA023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ family, designed specifically to replace parallel NOR/NAND and low-density DDRx in resource-constrained embedded systems where pin count, power, and ease of interface are critical.

FAQ

What is the difference between S27KL0642GABHA023 and S27KL0641GABHI020?

The S27KL0642GABHA023 is AEC-Q100 Grade 2 qualified (–40°C to +105°C) and supports DDR center-aligned read strobe (DCARS), while the S27KL0641GABHI020 is Industrial grade (–40°C to +85°C) and lacks DCARS. Both share identical memory density, HYPERBUS™ interface, and package, but only the GABHA023 meets automotive under-hood thermal requirements.

Does S27KL0642GABHA023 require external refresh control from the host MCU?

No. The device contains integrated self-refresh logic that autonomously manages DRAM array refresh during idle periods. The host only issues standard HYPERBUS™ read/write commands; no refresh scheduling or timing intervention is needed - this is core to its PSRAM behavior and simplifies firmware design.

Can RWDS be used as a pure input or output, or is it strictly bidirectional?

RWDS is strictly bidirectional per HYPERBUS™ specification: it outputs initial latency indication and read strobe edges, then functions as a write mask input during write transactions. The pin cannot be statically configured as unidirectional; direction is controlled automatically by transaction type and internal state machine.

What HYPERBUS™ command sets does S27KL0642GABHA023 support for burst configuration?

It supports register writes to Configuration Register 0 (CR0) and Configuration Register 1 (CR1) via HYPERBUS™ command 0x00 (Register Write), enabling runtime selection of burst length (16/32/64/128 bytes), wrap/linear mode, drive strength, and DCARS enable/disable - all without resetting the device.