Infineon Technologies S27KL0642GABHB020

Overview

S27KL0642GABHB020 from Infineon Technologies is a 64Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz clock rate and 400 MBps throughput. It features 8-bit DQ bus, bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), and industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used in embedded systems requiring low-pin-count, high-bandwidth external memory with no host-managed refresh.

For engineers reviewing the S27KL0642GABHB020 datasheet, S27KL0642GABHB020 pinout, S27KL0642GABHB020 application, or S27KL0642GABHB020 equivalent, key selection factors include HYPERBUS™ timing compliance, RWDS phase alignment for read eye optimization, partial array refresh configuration, hybrid sleep mode current (360 µA standby), and FBGA-24 mechanical compatibility with space-constrained PCB layouts.

Technical Context

This PSRAM integrates on-die refresh control logic that autonomously schedules DRAM array refreshes during idle cycles, eliminating host intervention. Its HYPERBUS™ interface uses only 11–12 signals (including optional CK#) and transfers command/address/data over the same 8-bit DQ bus using time-multiplexed protocol.

The RWDS signal serves dual roles: as a read-data strobe edge-aligned with CK during reads, and as a write-data mask input during writes; optional DCARS mode shifts RWDS phase by one-half clock to center-align transitions within the read data eye for improved timing margin at 200 MHz.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0642GABHB020, the S27KL0641GABHI020 extends thermal range without changing power or timing behavior, while the S27KS0642GABHB020 adds 1.2 V I/O compatibility at the cost of reduced voltage flexibility - both retain identical HYPERBUS™ transaction structure and RWDS timing behavior.

Availability

S27KL0642GABHB020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, edge AI accelerators, and medical imaging gateways requiring stable component supply across multi-year production cycles.

Supply support for S27KL0642GABHB020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT markets.

The HYPERRAM™ product line delivers high-density, low-pin-count external memory optimized for microcontroller-based systems needing SRAM-like simplicity with DRAM economics - targeting cost-sensitive, space-constrained embedded applications.

FAQ

Is S27KL0642GABHB020 pin-compatible with other HYPERRAM™ devices?

Yes - it shares identical 24-ball FBGA footprint and signal mapping with all S27KL/S27KS series devices, including S27KL0641GABHI020 and S27KS0642GABHB020. Mechanical and electrical pin assignments are fully aligned per Infineon's HYPERBUS™ specification, enabling drop-in replacement where voltage and temperature grades match.

Does this device require external refresh circuitry?

No - S27KL0642GABHB020 contains integrated self-refresh logic that autonomously manages DRAM array refresh during idle periods. The host processor accesses it as a pseudo-static RAM; no refresh commands, timers, or scheduling routines are needed in firmware.

What is the role of the RWDS signal during write operations?

During writes, RWDS functions as an input write-data mask: each bit controls whether the corresponding DQ[7:0] byte is written to the memory array. This enables selective byte programming without read-modify-write cycles, reducing latency and power in partial-update scenarios like register overlays or packet headers.

Can DCARS mode be disabled after power-up?

Yes - DCARS is controlled by Configuration Register 1 (CR1) bit [3]. It can be enabled or disabled dynamically via HYPERBUS™ register write commands. Disabling DCARS reverts RWDS to standard edge-aligned operation, useful for debugging or legacy host controller compatibility where phase-shifted strobes are unsupported.